Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 ● ■ Absolute Maximum Ratings 0.7±0.2 0.7±0.1 (Ta=25˚C) 13.5±0.5 ● Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is optimum for the pre-driver stage of a 40 to 60W output amplifier. +0.15 0.45 –0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V Emitter to base voltage VEBO –5 V 1.27 1.27 +0.15 0.45 –0.1 2.3±0.2 ● 8.0±0.2 ■ Features 1:Emitter 2:Collector 3:Base TO–92NL Package 1 2 3 2.54±0.15 Peak collector current ICP –1 Collector current IC – 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics A (Ta=25˚C) Parameter Symbol Conditions min Collector to emitter voltage VCEO IC = –0.1mA, IB = 0 –120 Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 hFE1*1 VCE = –10V, IC = –150mA*2 90 hFE2 VCE = –5V, IC = –500mA*2 50 VCE(sat) IC = –300mA, IB = –30mA*2 Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA*2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz Forward current transfer ratio Collector to emitter saturation voltage typ max V V 220 –1.0 –1.2 250 FE1 V V MHz 30 *2 *1h Unit pF Pulse measurement Rank classification Rank Q R hFE1 90 ~ 155 130 ~ 220 1 2SB1297 Transistor PC — Ta IC — VCE 1.6 hFE — IC –1.2 600 VCE=–10V 1.2 –7mA – 0.8 1.0 –6mA –5mA – 0.6 0.8 0.6 –4mA – 0.4 0.4 –3mA –2mA – 0.2 0.2 –1mA 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –30 –10 –3 Ta=–25˚C 25˚C 75˚C –100 Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 – 0.3 – 0.03 –30 –10 –3 Ta=75˚C 25˚C –25˚C –1 –1 –3 –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –3 –10 Cob — VCB Area of safe operation (ASO) –10 40 IE=0 f=1MHz Ta=25˚C 25 Single pulse Ta=25˚C –30 Collector current IC (A) 30 –10 ICP IC – 0.3 20 t=1s t=10ms – 0.1 15 – 0.03 10 – 0.01 5 – 0.003 –30 –100 Collector to base voltage VCB (V) –1 –3 –10 320 VCB=–10V Ta=25˚C 280 240 200 160 120 80 0 –1 Collector current IC (A) –10 100 40 Collector current IC (A) –3 25˚C –25˚C Collector current IC (A) IC/IB=10 – 0.03 35 Ta=75˚C 200 fT — I E – 0.1 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 300 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 – 0.3 – 0.1 Collector output capacitance Cob (pF) –8 400 VCE(sat) — IC –100 0 –1 –6 500 Collector to emitter voltage VCE (V) VBE(sat) — IC –1 –4 Transition frequency fT (MHz) 0 2 Forward current transfer ratio hFE –9mA –8mA –1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25˚C IB=–10mA 1.4 – 0.001 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) 1 3 10 30 Emitter current IE (mA) 100