VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” (Ultrafast Speed IGBT), 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 μs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient • HEXFRED® antiparallel diode with ultrasoft reverse recovery characteristics • Industry standard package INT-A-PAK • Al2O3 DBC • UL approved file E78996 • Designed for industrial level PRODUCT SUMMARY • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VCES 600 V IC DC 108 A VCE(on) at 100 A, 25 °C 2.6 V Speed 8 kHz to 30 kHz Package INT-A-PAK • Rugged transient performance Circuit Half bridge • Direct mounting on heatsink BENEFITS • Benchmark efficiency for UPS and welding application • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 108 TC = 80 °C 74 Pulsed collector current ICM 200 Clamped inductive load current ILM 200 Diode continuous forward current IF Gate to emitter voltage VGE Maximum power dissipation PD Isolation voltage Operating junction temperature range Storage temperature range VISOL A TC = 25 °C TC = 80 °C 106 69 ± 20 TC = 25 °C 390 TC = 80 °C 219 Any terminal to case, t = 1 min 2500 V W TJ -40 to +150 TStg -40 to +150 V °C Revision: 10-Jun-15 Document Number: 94501 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage VBR(CES) VCE(on) VGE(th) Collector to emitter leakage current ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES MIN. TYP. MAX. VGE = 0 V, IC = 500 μA TEST CONDITIONS 600 - - VGE = 15 V, IC = 50 A - 1.95 2.1 VGE = 15 V, IC = 100 A - 2.6 2.85 VGE = 15 V, IC = 50 A, TJ = 125 °C - 2.21 2.44 VGE = 15 V, IC = 100 A, TJ = 125 °C - 3.05 3.38 VCE = VGE, IC = 500 μA 3 4.6 6 VGE = 0 V, VCE = 600 V - 0.01 0.1 VGE = 0 V, VCE = 600 V, TJ = 150 °C - 3.7 10 1.66 UNITS V mA IC = 50 A - 1.35 IC = 100 A - 1.57 1.96 IC = 50 A, TJ = 125 °C - 1.27 1.50 IC = 100 A, TJ = 125 °C - 1.57 1.89 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 0.6 - - 1.1 - - 1.7 - V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon - 0.8 - Turn-off switching loss Eoff - 1.3 - Total switching loss Etot - 2.1 - Turn-on delay time td(on) - 197 - - 50 - - 225 - - 72 - Rise time tr Turn-off delay time IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 4.7 , L = 200 μH, TJ = 25 °C IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 4.7 , L = 200 μH, TJ = 125 °C td(off) Fall time tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 200 A, Rg = 27 VGE = 15 V to 0 Short circuit safe operating area SCSOA TJ = 150 °C, VCC = 400 V, VP = 600 V, Rg = 27 VGE = 15 V to 0 Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 25 °C IF = 50 A, dIF/dt = 200 A/μs, VCC = 400 V, TJ = 125 °C mJ ns Fullsquare 10 - - - 116 140 ns - 11 15 A - 600 1050 nC - 152 190 ns - 16 20 A - 1215 1900 nC THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction and storage temperature range Junction to case per leg IGBT Diode Case to sink per module Mounting torque Weight SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -40 - 150 °C RthJC RthCS - 0.23 0.32 - 0.38 0.64 - 0.1 - case to heatsink - - 4 case to terminal 1, 2, 3 - - 3 - 185 - °C/W Nm g Revision: 10-Jun-15 Document Number: 94501 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors 200 5 IcE (A) 150 VCE, Collector -to-Emitter Voltage (V) Vge = 18V Vge = 15V Vge = 12V Vge = 9V 100 50 4 3.5 Ic = 100A 3 2.5 Ic = 50A 2 1.5 0 0 1 2 3 4 5 0 6 20 40 60 80 100 120 140 160 VCE (V) TJ, Junction Temperature (°C) Fig. 1 - Typical IGBT Output Characteristics TJ = 25 °C, tp = 500 μs Fig. 4 - Typical Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V, 500 μs pulse width 200 200 Vge = 18V Vge = 15V Vge = 12V 150 150 Vge = 9V 100 IF (A) IcE (A) Ic = 200A 4.5 50 100 50 Tj = 125°C Tj = 25°C 0 0 0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 VCE (V) VF (V) Fig. 2 - Typical IGBT Output Characteristics TJ = 125 °C, tp = 500 μs Fig. 5 - Diode Forward Characteristics, tp = 500 μs 200 160 160 140 TC, Case Temperature (°C) 180 IcE (A) 140 120 100 80 60 Tj = 125°C 40 Tj = 25°C 20 120 100 DC 80 60 40 20 0 0 2 4 6 8 10 VGE (V) Fig. 3 - Typical Transfer Characteristics VCE = 20 V, tp = 500 μs 0 0 20 40 60 80 100 120 Maximum DC Collector Current (A) Fig. 6 - Maximum Collector Current vs. Case Temperature Revision: 10-Jun-15 Document Number: 94501 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors 1.4 1000 1.2 Energy Time (ns) Energy (mJ) td(off) Eoff 1.0 0.8 Eon 0.6 0.4 td(on) 100 tf tr 0.2 10 0 0 20 40 60 80 100 0 120 10 20 30 40 50 RG (Ω) IC (A) Fig. 10 - Typical Switching Time vs. Rg TJ = 125 °C, L = 200 μH, VCC = 360 V, ICE = 100 A, VGE = 15 V Fig. 7 - Typical Energy Loss vs. IC, TJ = 125 °C, L = 200 μH, VCC = 360 V, Rg = 4.7 , VGE = 15 V 100 1000 4.7 ohm 80 td(off) 70 td(on) IRR (A) Switching Time (ns) 90 100 tf 60 27 ohm 50 40 30 47 ohm 20 tr 10 0 10 20 40 60 80 0 100 20 40 60 80 100 120 IF (A) I (A) Fig. 11 - Typical Diode Irr vs. IF, TJ = 125 °C Fig. 8 - Typical Switching Time vs. IC TJ = 125 °C, L = 200 μH, VCC = 360 V, Rg = 4.7 , VGE = 15 V 100 5.0 4.5 4.0 80 Eon 3.0 IRR (A) Energy (mJ) 3.5 Eoff 2.5 60 40 2.0 1.5 20 1.0 0.5 0 0 0 10 20 30 40 50 0 10 20 30 40 Rg (Ω) RG (Ω) Fig. 9 - Typical Energy Loss vs. Rg TJ = 125 °C, L = 200 μH, VCC = 360 V, ICE = 100 A, VGE = 15 V Fig. 12 - Typical Diode Irr vs. Rg, TJ = 125 °C, IF = 100 A 50 Revision: 10-Jun-15 Document Number: 94501 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors 90 Total Switching Losses (mJ) 10 IRR (A) 80 70 60 Ic = 50A 1 Ic = 25A 0.1 50 600 800 1000 1200 1400 1600 0 1800 25 50 75 100 125 dIF / dt (A/μs) TJ - Junction Temperature (°C) Fig. 13 - Typical Diode Irr vs. dIF/dt, TJ = 125 °C, VCC = 360 V, IF = 150 A, VGE = 15 V Fig. 15 - Typical Switching Losses vs. Junction Temperature, L = 200 μH, Rg = 10 , VCC = 360 V, VGE = 15 V 9 2.5 8 Total Switching Losses (mJ) Total Switching Losses (mJ) Ic = 100A 7 6 5 4 3 2 2 1.5 1 0.5 1 0 0 10 20 30 40 50 20 40 60 80 100 IC (A) RG (Ω) Fig. 14 - Typical Switching Losses vs. Gate Resistance, TJ = 125 °C, L = 200 μH, Rg = 10 , VCC = 360 V, VGE = 15 V Fig. 16 - Typical Switching Losses vs. Collector to Emitter Current, TJ = 125 °C, Rg1 = 4.7 V, Rg2 = 0 , VCC = 360 V, VGE = 15 V Thermal response (Z thJC) 1 D = 0.5 0.1 D = 0.2 D = 0.1 D = 0.05 0.01 D = 0.02 D = 0.01 Notes: 1. Duty Factor D = t1/t2 Single Pulse (Thermal Response) 0.001 1E-05 1E-04 1E-03 2. Peak Tj = Pdm x ZthJC + Tc 1E-02 1E-01 1E+00 1E+01 t1 , Rectangular Pulse Duration (sec) Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) Revision: 10-Jun-15 Document Number: 94501 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors 1 Thermal response (Z thJC) D = 0.5 D = 0.2 0.1 D = 0.1 D = 0.05 D = 0.02 D = 0.01 0.01 Single Pulse (Thermal Response) 0.001 1E-05 1E-04 1E-03 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = Pdm x ZthJC + Tc 1E-02 1E-01 1E+00 t1 , Rectangular Pulse Duration (sec) Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED®) Revision: 10-Jun-15 Document Number: 94501 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TS60NPbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 100 T S 60 N PbF 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 NPT 4 - Current rating (100 = 100 A) 5 - Circuit configuration (T = Half-bridge) 6 - Package indicator (S = INT-A-PAK) 7 - Voltage rating (60 = 600 V) 8 - Speed/type (N = Ultrafast IGBT) 9 - Lead (Pb)-free CIRCUIT CONFIGURATION 3 6 7 1 4 5 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95543 Revision: 10-Jun-15 Document Number: 94501 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK IGBT Ø 6.5 (Ø 0.25) 80 (3.15) 23 (0.91) 14.3 (0.56) 23 (0.91) 5 (0.20) 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 2 3 5 1 66 (2.60) 3 screws M5 x 10 4 35 (1.38) 7 6 17 (0.67) 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) 37 (1.44) 94 (3.70) Revision: 27-Mar-13 Document Number: 95543 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000