VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors “Half-Bridge” IGBT INT-A-PAK, (Standard Speed IGBT), 100 A FEATURES • Standard speed PT IGBT technology • Optimized for hard switching speed • FRED Pt® antiparallel diodes with fast recovery • Very low conduction losses • Al2O3 DBC • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 INT-A-PAK BENEFITS • Optimized for high current inverter stages (AC TIG welding machines) PRODUCT SUMMARY VCES 600 V IC DC 220 A • Direct mounting to heatsink VCE(on) at 100 A, 25 °C 1.11 V • Very low junction to case thermal resistance Speed DC to 1 kHz Package INT-A-PAK Circuit Half bridge • Low EMI ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current SYMBOL TEST CONDITIONS MAX. UNITS 600 V VCES IC TC = 25 °C 220 TC = 130 °C 100 ICM Peak switching current ILM 440 Gate to emitter voltage VGE ± 20 RMS isolation voltage VISOL Maximum power dissipation Operating junction temperature range Storage temperature range PD A 440 Any terminal to case, t = 1 min 2500 TC = 25 °C 780 TC = 100 °C 312 V W TJ -40 to +150 TStg -40 to +125 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage SYMBOL VBR(CES) VCE(on) VGE(th) Collector to emitter leakage current ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES TEST CONDITIONS MIN. TYP. MAX. 600 - - VGE = 15 V, IC = 100 A - 1.11 1.28 IC = 200 A - 1.39 - VGE = 15 V, IC = 100 A, TJ = 125 °C - 1.08 1.22 IC = 0.25 mA 3 - 6 VGE = 0 V, VCE = 600 V - - 1 VGE = 0 V, VCE = 600 V, TJ = 125 °C - - 10 VGE = 0 V, IC = 1 mA IC = 100 A, VGE = 0 V - 1.44 1.96 IC = 100 A, VGE = 0 V, TJ = 125 °C - 1.25 1.54 VGE = ± 20 V - - ± 250 UNITS V mA V nA Revision: 10-Jun-15 Document Number: 94544 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge Qg Gate to emitter charge Qge Gate to collector charge Qgc Rise time tr Fall time tf Turn-on switching energy Eon Turn-off switching energy Eoff Total switching energy Ets Turn-on switching energy Eon Turn-off switching energy Eoff Total switching energy Ets Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr TEST CONDITIONS MIN. TYP. MAX. - 640 700 - 108 120 - 230 300 - 0.45 - - 1.0 - IC = 100 A VCC = 400 V VGE = 15 V IC = 100 A VCC = 480 V VGE = 15 V Rg = 15 TJ = 25 °C UNITS nC μs - 4 6 - 23 29 - 27 35 - 6 12 - 35 40 - 41 52 VGE = 0 V VCC = 30 V f = 1.0 MHz - 16 250 - - 1040 - - 190 - IF = 50 A dIF/dt = 200 A/μs Vrr = 200 V - 91 155 - 10.6 15 A - 500 900 nC IF = 50 A dIF/dt = 200 A/μs Vrr = 200 V, TJ = 125 °C - 180 344 ns - 17 20.5 A - 1633 2315 nC IC = 100 A, VCC = 480 V VGE = 15 V, Rg = 15 TJ = 125 °C mJ pF ns THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Operating junction temperature range Storage temperature range Junction to case per switch Weight MIN. TYP. MAX. TJ -40 - 150 TStg -40 - 125 - - 0.16 - - 0.48 - 0.1 - case to heatsink - - 4 case to terminal 1, 2, 3 - - 3 - 185 - per diode Case to sink per module Mounting torque SYMBOL RthJC RthCS UNITS °C °C/W Nm g Revision: 10-Jun-15 Document Number: 94544 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA100TS60SFPbF VCE - Collector-to-Emitter Voltage (V) 1000 VGE = 15 V 100 TJ = 25 °C TJ = 125 °C 10 0.6 IC - Collector-to-Emitter Current (A) Vishay Semiconductors 0.8 1 1.2 1.4 1.6 1.5 IC = 200 A 1.3 IC = 100 A 1.1 IC = 50 A 0.9 0.7 25 1.8 75 100 125 150 TJ - Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Typical Collector to Emitter Voltage vs. Junction Temperature 1000 TJ = 125 °C 100 TJ = 25 °C 10 VCE = 10 V 380 μs PULSE WIDTH 1 20 VCC = 400 V IC = 100 A 15 10 5 0 5.5 6.5 7.5 0 8.5 100 200 300 400 500 600 700 Qg - Total Gate Charge (nC) VGE - Gate-to-Emitter Voltage (V) Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage Fig. 2 - Typical Transfer Characteristics 35 240 TJ = 25 °C, VCE = 480 V VGE = 15 V, IC = 100 A 30 200 Switching Losses (mJ) Maximum DC Collector Current (A) 50 VCE - Collector-to-Emitter Voltage (V) VGE - Gate-to-Emitter Voltage (V) IC - Collector-to-Emitter Current (A) www.vishay.com 160 120 80 40 Eoff 25 20 15 Eon 10 5 0 0 25 50 75 100 125 150 10 20 30 40 50 TC - Case Temperature (°C) Rg - Gate Resistance (Ω) Fig. 3 - Maximum Collector Current vs. Case Temperature Fig. 6 - Typical Switching Losses vs. Gate Resistance Revision: 10-Jun-15 Document Number: 94544 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors 1000 TJ = 125 °C VCE = 480 V VGE = 15 V Rg = 15 Ω 50 VR = 200 V Eoff IF = 50 A, TJ = 125 °C 40 trr (ns) Switching Losses (mJ) 60 30 IF = 50 A, TJ = 25 °C 20 Eon 10 0 0 40 80 120 10 100 160 1000 IC - Collector-to-Emitter Current (A) dIFdt (A/μs) Fig. 7 - Typical Switching Losses vs. Collector to Emitter Current Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt 100 1000 VR = 200 V IF = 50 A, TJ = 125 °C TJ = 125 °C 100 IRRM (A) IF - Instantaneous Forward Current (A) 100 10 10 IF = 50 A, TJ = 25 °C TJ = 25 °C 1 100 1 0 0.5 1 1.5 2 2.5 1000 dIFdt (A/μs) VFM - Forward Voltage Drop (V) Fig. 8 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 10 - Typical Reverse Recovery Current vs. dIF/dt 10 000 VR = 200 V Qrr (nC) IF = 50 A, TJ = 125 °C 1000 IF = 50 A, TJ = 25 °C 100 100 1000 dIFdt (A/μs) Fig. 11 - Typical Stored Charge vs. dIF/dt Revision: 10-Jun-15 Document Number: 94544 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- GA 100 T S 60 S F PbF 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Essential part number IGBT modules 3 4 - Current rating (100 = 100 A) 5 - Circuit configuration (T = Half bridge) INT-A-PAK 6 - Voltage code (60 = 600 V) 7 - Speed/type (S = Standard speed IGBT) 8 - Diode type 9 - None = Standard production; PbF = Lead (Pb)-free CIRCUIT CONFIGURATION 3 6 7 1 4 5 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95173 Revision: 10-Jun-15 Document Number: 94544 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors INT-A-PAK IGBT Ø 6.5 (Ø 0.25) 80 (3.15) 23 (0.91) 14.3 (0.56) 23 (0.91) 5 (0.20) 2.8 x 0.8 (0.11 x 0.03) 14.5 (0.57) 2 3 5 1 66 (2.60) 3 screws M6 x 10 4 35 (1.38) 7 6 17 (0.67) 29 (1.15) 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) 37 (1.44) 94 (3.70) Revision: 27-Mar-13 Document Number: 95173 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000