DMG20402 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For general amplification Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: B7 Basic Part Number DSC2002 + DSA2002 (Individual) Packaging DMG204020R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Tr2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 500 mA Peak collector current ICP 1 A Collector-base voltage (Emitter open) VCBO –60 V Collector-emitter voltage (Base open) VCEO –50 V Emitter-base voltage (Collector open) VEBO –5 V Collector current IC –500 mA Peak collector current ICP –1 A Total power dissipation PT 300 mW Tj 150 °C Tstg –55 to +150 °C Overall Junction temperature Storage temperature Publication date: February 2013 Ver. BED 1: Emitter (Tr1) 2: Base (Tr1) 3: Collector (Tr2) Panasonic JEITA Code (C1) 6 4: Emitter (Tr2) 5: Base (Tr2) 6: Collector (Tr1) Mini6-G4-B SC-74 SOT-457 (B2) 5 Tr1 1 (E1) (E2) 4 Tr2 2 (B1) 3 (C2) 1 DMG20402 Electrical Characteristics Ta = 25°C±3°C Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 hFE1 VCE = 10 V, IC = 150 mA 120 hFE2 VCE = 10 V, IC = 500 mA 40 VCE(sat) IC = 300 mA, IB = 30 mA 0.1 fT VCE = 10 V, IC = 50 mA 160 VCB = 10 V, IE = 0, f = 1 MHz 4.8 Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Cob 0.1 340 0.6 µA V MHz 15 pF Max Unit Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement Tr2 Parameter Symbol Conditions Min Typ Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –60 V Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V Emitter-base voltage (Collector open) VEBO IE = –10 µA, IC = 0 –5 V Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 hFE1 VCE = –10 V, IC = –150 mA 120 hFE1 VCE = –10 V, IC = –500 mA 40 Collector-emitter saturation voltage *1 VCE(sat) IC = –300 mA, IB = –30 mA – 0.2 – 0.6 V Base-emitter saturation voltage *1 VBE(sat) IC = –300 mA, IB = –30 mA – 0.9 –1.5 V fT VCE = –10 V, IC = –50 mA 130 VCB = –10 V, IE = 0, f = 1 MHz 7.3 Forward current transfer ratio *1 Transition frequency Collector output capacitance (Common base, input open circuited) Cob – 0.1 340 µA MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement Ver. BED 2 DMG20402 Common characteristics chart DMG20402_PT-Ta PT Ta Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 200 Ambient temperature Ta (°C) Characteristics charts of Tr1 DMG20402(Tr1)_IC-VCE IB = 3.0 mA 2.7 mA 2.4 mA 2.1 mA 400 1.8 mA 1.5 mA 300 1.2 mA 200 0.9 mA 0.6 mA 100 0.3 mA 0 2 4 6 8 10 250 25°C 200 −30°C 150 100 50 VCE = 10 V 0 12 1 Collector-emitter voltage VCE (V) 25°C 300 −30°C 200 100 0.8 Base-emitter voltage VBE (V) 1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector current IC (mA) Ta = 85°C 0.4 1 Ta = 85°C 0.1 25°C −30°C 0.01 1 10 20 fT IC 12 8 4 0 1 10 100 Collector-base voltage VCB (V) Ver. BED 1 000 DMG20402(Tr1)_fT-IC IE = 0 f = 1 MHz Ta = 25°C 16 100 Collector current IC (mA) Cob VCB VCE = 10 V 0 1 000 IC / IB = 10 DMG20402(Tr1)_Cob-VCB IC VBE 400 100 10 Collector current IC (mA) DMG20402(Tr1)_IC-VBE 500 10 250 Transition frequency fT (MHz) Collector current IC (mA) 500 Ta = 85°C Forward current transfer ratio hFE Ta = 25°C 0 VCE(sat) IC 300 Collector-emitter saturation voltage VCE(sat) (V) hFE IC 600 0 DMG20402(Tr1)_VCEsat-IC DMG20402(Tr1)_hFE-IC IC VCE VCE = 10 V Ta = 25°C 200 150 100 50 0 0.1 1 10 100 Collector current IC (mA) 3 DMG20402 Characteristics charts of Tr2 DMG20402(Tr2)_IC-VCE DMG20402(Tr2)_hFE-IC VCE = −10 V IB = −500 µA −400 µA −60 −300 µA −40 −200 µA −100 µA −20 0 −2 −4 −6 −8 −10 250 200 25°C 150 −30°C 50 0 −1 −12 Collector current IC (mA) −30°C −300 −200 −100 − 0.4 − 0.8 −1.2 Base-emitter voltage VBE (V) Collector output capacitance (Common base, input open circuited) Cob (pF) 25°C Ta = 85°C 0 −1 000 − 0.01 −1 25 10 5 −10 −100 Collector-base voltage VCB (V) Ver. BED −100 −1 000 fT IC 15 0 −1 −10 DMG20402(Tr2)_fT-IC IE = 0 f = 1 MHz Ta = 25°C 20 25°C Collector current IC (mA) Cob VCB −600 0 −100 Ta = 85°C −30°C DMG20402(Tr2)_Cob-VCB IC VBE −400 −10 IC / IB = 10 −1 Collector current IC (mA) DMG20402(Tr2)_IC-VBE −500 −10 − 0.1 100 Collector-emitter voltage VCE (V) VCE = −10 V Ta = 85°C 200 Transition frequency fT (MHz) −80 0 VCE(sat) IC 300 Ta = 25°C Forward current transfer ratio hFE Collector current IC (mA) −100 DMG20402(Tr2)_VCEsat-IC hFE IC Collector-emitter saturation voltage VCE(sat) (V) IC VCE VCE = −10 V Ta = 25°C 160 120 80 40 0 − 0.1 −1 −10 −100 Collector current IC (mA) 4 DMG20402 Mini6-G4-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. 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