VS-GB150TH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V and 150 A FEATURES • 10 μs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology Double INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRODUCT SUMMARY VCES 1200 V • Inductive heating IC at TC = 80 °C 150 A • Electronic welder VCE(on) (typical) at IC = 150 A, TJ = 25 °C 3.10 V • Switching mode power supplies Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Half bridge DESCRIPTION Vishay’s IGBT power module provides ultrafast switching speed as well as short circuit ruggedness. It is designed for applications such as electronic welder and inductive heating. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current Diode continuous forward current Diode maximum forward current Maximum power dissipation Short circuit withstand time RMS isolation voltage UNITS V TC = 25 °C 280 TC = 80 °C 150 tp = 1 ms 300 TC = 80 °C 150 tp = 1 ms 300 PD TJ = 150 °C 1147 W TSC TJ = 125 °C 10 μs 2500 V IC ICM (1) IF IFM (1) VISOL f = 50 Hz, t = 1 min A Note (1) Repetitive rating: Pulse width limited by maximum junction temperature. Revision: 10-Jun-15 Document Number: 94714 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150TH120U www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 150 A, TJ = 25 °C - 3.10 3.60 VGE = 15 V, IC = 150 A, TJ = 125 °C - 3.45 - UNITS Collector to emitter saturation voltage VCE(sat) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 1.5 mA, TJ = 25 °C 4.4 5.2 6.0 Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time Fall time SYMBOL MIN. TYP. MAX. td(on) - 612 - tr - 116 - td(off) - 546 - tf TEST CONDITIONS VCC = 600 V, IC = 150 A, Rg = 6.8 , VGE = ± 15 V, TJ = 25 °C - 125 - Turn-on switching loss Eon - 17.7 - Turn-off switching loss Eoff - 8.9 - Turn-on delay time td(on) - 609 - tr - 116 - - 564 - - 148 - Rise time Turn-off delay time Fall time td(off) tf VCC = 600 V, IC = 150 A, Rg = 6.8 , VGE = ± 15 V, TJ = 125 °C Turn-on switching loss Eon - 17.5 - Turn-off switching loss Eoff - 11.0 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC VGE = 0 V, VCE = 30 V, f = 1.0 MHz tp 10 μs, VGE = 15 V, TJ = 25 °C, VCC = 600 V, VCEM 1200 V - 12.7 - - 1.14 - - 0.46 - - 1400 - ns mJ ns mJ nF A Internal gate rsistance Rg - 2.4 - Stray inductance LCE - - 18 nH - 0.32 - m MIN. TYP. MAX. UNITS Module lead resistance, terminal to chip RCC’+EE’ TC = 25 °C DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Forward voltage VF Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery energy Erec TEST CONDITIONS IF = 100 A IF = 150 A, VR = 600 V, dIF/dt = -1500 A/μs VGE = -15 V TJ = 25 °C - 1.75 2.15 TJ = 125 °C - 1.80 - TJ = 25 °C - 8.2 - TJ = 125 °C - 19.1 - TJ = 25 °C - 85 - TJ = 125 °C - 125 - TJ = 25 °C - 4.2 - TJ = 125 °C - 8.4 - V μC A mJ Revision: 10-Jun-15 Document Number: 94714 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150TH120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ - - 150 °C TStg -40 - 125 °C - - 0.109 - - 0.180 - 0.035 - Maximum junction temperature range Storage temperature range TEST CONDITIONS IGBT Junction to case RJC Diode Case to sink (Conductive grease applied) RCS Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Mounting torque Nm Weight Weight of module - 60 300 250 50 Eon,Eoff (mJ) 25 °C 200 125 °C 150 100 300 - g VCC = 600 V Rg = 6.8 Ω VGE = ± 15 V TJ = 125 °C VGE = 15 V IC (A) K/W 40 Eon 30 20 Eoff 50 10 0 0 0 1 2 3 4 0 5 100 150 200 250 VCE (V) IC (A) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 300 80 300 VCE = 20 V VCC = 600 V IC = 150 A VGE = ± 15 V TJ = 125 °C 70 250 60 200 125 °C Eon,Eoff (mJ) IC (A) 50 150 100 25 °C 50 Eon 40 30 Eoff 20 50 10 0 0 4 5 6 7 8 9 10 11 0 10 20 30 40 VGE (V) Rg (Ω) Fig. 2 - IGBT Typical Transfer Characteristics Fig. 4 - IGBT Switching Loss vs. Rg 50 Revision: 10-Jun-15 Document Number: 94714 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150TH120U www.vishay.com Vishay Semiconductors 350 300 IC, Module IC (A) 250 200 150 100 Rg = 6.8 Ω VGE = ± 15 V TJ = 125 °C 50 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA 100 IGBT ZthJC (K/W) 10-1 10-2 10-3 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 12 300 250 10 25 °C Erec 8 E (mJ) IF (A) 200 125 °C 150 6 4 100 VCC = 600 V Rg = 6.8 Ω VGE = - 15 V TJ = 125 °C 2 50 0 0 0 0.5 1 1.5 2 2.5 3 0 50 100 150 200 250 VF (V) IF (A) Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 300 Revision: 10-Jun-15 Document Number: 94714 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB150TH120U www.vishay.com Vishay Semiconductors 12 10 E (mJ) 8 Erec 6 4 VCC = 600 V IC = 150 A VGE = - 15 V TJ = 125 °C 2 0 0 10 30 20 40 50 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Rg 100 DIODE ZthJC (K/W) 10-1 10-2 10-3 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95525 Revision: 10-Jun-15 Document Number: 94714 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors Double INT-A-PAK DIMENSIONS in millimeters (inches) 26 23 ± 0.3 6 7.2 ± 0.6 31 ± 0.5 2.8 x 0.5 16 3-M6 30.5 ± 0.5 Mounting depth max. 11 Ø 6. 4 ± 28 ± 0.3 28 ± 0.3 20.1 0. 2 6 22 35.4 27 ± 0.4 3 15 ± 0.4 2 30 48 ± 0.4 61.4 1 6 93 ± 0.4 106.4 Revision: 27-May-13 Document Number: 95525 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000