VS-GT200TP065N www.vishay.com Vishay Semiconductors INT-A-PAK, Half Bridge - Trench IGBT, 200 A FEATURES • Trench IGBT • Very low VCE(on) • 5 μs short circuit capability • Positive VCE(on) temperature coefficient • FRED Pt® anti-parallel diode low Qrr and low switching energy • Industry and standard package New INT-A-PAK • TJ = 175 °C • UL pending • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 650 V IC (DC) at TC = 80 °C 166 A VCE(on) (typical) at IC = 200 A, TJ = 25 °C 1.9 V BENEFITS • Benchmark efficiency for UPS and welding application • Rugged transient performance Speed 8 kHz to 30 kHz Package INT-A-PAK Circuit Half bridge • Direct mounting on heatsink • Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 650 V TC = 25 °C 221 TC = 80 °C 166 Pulsed collector current ICM 320 Clamped inductive load current ILM 320 Diode continuous forward current IF Maximum non-repetitive peak current IFSM Gate to emitter voltage VGE IGBT Maximum power dissipation PD Diode RMS isolation voltage Operating junction temperature range VISOL TJ TC = 25 °C 138 TC = 80 °C 103 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 700 ± 20 TC = 25 °C 600 TC = 80 °C 380 TC = 25 °C 288 A V W TC = 80 °C 183 TJ = 25 °C, f = 50 Hz, t = 1 s 3500 V -40 to +175 °C Revision: 11-Jun-15 Document Number: 93567 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT200TP065N www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage SYMBOL V(BR)CES VCE(on) VGE(th) TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 500 μA 650 - - VGE = 15 V, IC = 100 A - 1.45 1.56 VGE = 15 V, IC = 200 A - 1.9 2.12 VGE = 15 V, IC = 100 A, TJ = 125 °C - 1.58 - VGE = 15 V, IC = 200 A, TJ = 125 °C - 2.21 - VCE = VGE, IC = 6.6 mA UNITS V 5.0 5.8 8.4 Temperature coefficient of threshold voltage VGE(th)/TJ VCE = VGE, IC = 6.6 mA (25 °C to 125 °C) - -15.6 - mV/°C Forward transconductance gfe VCE = 20 V, IC = 50 A - 67 - S Transfer characteristics VGE VCE = 20 V, IC = 200 A - 9.8 - V Collector to emitter leakage current ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES VGE = 0 V, VCE = 650 V - 0.3 60 μA VGE = 0 V, VCE = 650 V, TJ = 125 °C - 0.1 - mA IFM = 100 A - 1.75 2.24 IFM = 200 A - 2.08 3.04 IFM = 100 A, TJ = 125 °C - 1.41 - IFM = 200 A, TJ = 125 °C - 1.80 - VGE = ± 20 V - - 600 nA MIN. TYP. MAX. UNITS - 1.2 - - 4.6 - - 5.8 - V SWITCHING CHARACTERISTICS PARAMETER Turn-on switching loss SYMBOL Eon Turn-off switching loss Eoff Total switching loss Etot TEST CONDITIONS VCC = 325 V, IC = 200 A, Rg = 4.7 , L = 500 μH, VGE = 15 V mJ Turn-on switching loss Eon - 1.53 - Turn-off switching loss Eoff - 5.29 - - 6.82 - - 214 - tr - 103 - td(off) - 203 - - 90 - - - 5.5 μs - 73 - ns - 13 - A - 465 - nC Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time VCC = 325 V, IC = 200 A, Rg = 4.7 , L = 500 μH, VGE = 15 V, TJ = 125 °C tf Reverse bias safe operating area RBSOA IC = 320 A, Rg = 4.7 , VCC = 325 V, Vp = 650 V, VGE = 15 V to 0 V, TJ = 175 °C Short circuit safe operating area SCSOA VCC = 325 V, Vp = 650 V, Rg = 4.7 , VGE = 15 V to 0 V, TJ = 175 °C mJ ns ANTI-PARALLEL DIODE Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr IF = 50 A, dIF/dt = 500 A/μs Vrr = 200 V, TJ = 25 °C IF = 50 A, dIF/dt = 500 A/μs Vrr = 200 V, TJ = 125 °C - 146 - ns - 28 - A - 2064 - nC Revision: 11-Jun-15 Document Number: 93567 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT200TP065N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. TJ -40 - 175 TStg -40 - 125 - - 0.25 - - 0.52 - 0.05 - Power terminal screw: M5 2.5 - 5.0 Mounting screw: M6 3.0 - 5.0 - 150 - Operating junction temperature range Storage temperature range IGBT Junction to case per leg RthJC Diode Case to sink per module (conductive grease applied) Mounting torque TEST CONDITIONS RthCS Weight 300 250 TJ = 125 °C TJ = 25 °C 200 TJ = 175 °C 150 100 50 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Allowable Case Temperature (°C) 350 IC (A) °C °C/W Nm g 180 400 160 140 120 100 DC 80 60 40 20 0 0 4.0 40 80 120 160 200 240 VCE (V) IC - Continuous Collector Current (A) Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature 400 4.0 VGE = 12 V VGE = 15 V VGE = 18 V 350 300 400 A 3.5 3.0 VCE (V) 250 IC (A) UNITS 200 150 VGE = 9 V 2.5 200 A 2.0 100 A 100 1.5 50 0 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 20 40 60 80 100 120 140 160 180 VCE (V) TJ (°C) Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 11-Jun-15 Document Number: 93567 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT200TP065N www.vishay.com Vishay Semiconductors 10 200 TJ = 175 °C VCE = 20 V 180 1 160 TJ = 125 °C 140 0.1 IC (A) ICES (mA) TJ = 125 °C 120 100 80 0.01 0.001 60 TJ = 25 °C TJ = 25 °C 40 0.0001 20 0.00001 100 0 3 4 5 6 7 8 9 10 11 12 200 300 Fig. 5 - Typical IGBT Transfer Characteristics 400 6.0 350 TJ = 25 °C IF (A) VGEth (V) TJ = 125 °C 250 4.5 200 150 TJ = 125 °C 3.5 100 3.0 50 2.5 0 1.0 2.0 3.0 4.0 5.0 700 300 5.0 0 600 Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 6.5 4.0 500 VCES (V) VGE (V) 5.5 400 6.0 7.0 8.0 9.0 TJ = 175 °C TJ = 25 °C 0 0.5 1.0 1.5 2.0 2.5 3.0 IC (mA) VFM (V) Fig. 6 - Typical IGBT Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics Allowable Case Temperature (°C) 1000 IC (A) 100 10 1 180 160 140 120 DC 100 80 60 40 20 0 10 100 1000 0 20 40 60 80 100 120 140 VCE (V) IF - Continuous Forward Current (A) Fig. 7 - IGBT Reverse BIAS SOA TJ = 175 °C, VGE = 15 V Fig. 10 - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 11-Jun-15 Document Number: 93567 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT200TP065N www.vishay.com Vishay Semiconductors 6 10 000 5.5 5 Switching Time (ns) 4.5 Energy (mJ) 4 3.5 Eoff 3 2.5 2 1.5 1 1000 td(on) td(off) tr 100 tf Eon 0.5 0 10 40 60 80 0 100 120 140 160 180 200 220 5 10 15 IC (A) trr (ns) Switching Time (ns) td(off) tf tr 10 40 60 80 210 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 35 40 45 50 TJ = 125 °C TJ = 25 °C 100 100 120 140 160 180 200 220 200 300 400 500 IC (A) dIF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. IC TJ = 125 °C, VCC = 325 V, Rg = 4.7 , VGE = 15 V, L = 500 μH Fig. 15 - Typical Diode Reverse Recovery Time vs. dIF/dt Vrr = 200 V, IF = 50 A 20 18 16 14 12 Irr (A) Energy (mJ) 30 Fig. 14 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 325 V, IC = 200 A, VGE = 15 V, L = 500 μH 1000 100 25 Rg (Ω) Fig. 11 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 325 V, Rg = 4.7 , VGE = 15 V, L = 500 μH td(on) 20 10 8 Eoff 6 4 Eon 2 0 0 5 10 15 20 25 30 35 40 45 50 30 28 26 24 22 20 18 16 14 12 10 8 6 4 TJ = 125 °C TJ = 25 °C 100 200 300 400 500 Rg (Ω) dIF/dt (A/μs) Fig. 13 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, VCC = 325 V, IC = 200 A, VGE = 15 V, L = 500 μH Fig. 16 - Typical Diode Reverse Recovery Current vs. dIF/dt Vrr = 200 V, IF = 50 A Revision: 11-Jun-15 Document Number: 93567 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT200TP065N www.vishay.com Vishay Semiconductors 2200 2000 1800 1600 TJ = 125 °C Qrr (nC) 1400 1200 1000 800 600 TJ = 25 °C 400 200 0 100 200 300 400 500 dIF/dt (A/μs) Fig. 17 - Typical Diode Reverse Recovery Charge vs. dIF/dt Vrr = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT) ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (Diode) Revision: 11-Jun-15 Document Number: 93567 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT200TP065N www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION 3 4 5 1 6 7 2 ORDERING INFORMATION TABLE Device code VS- G T 200 T P 065 N 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - T = Trench IGBT 4 - Current rating (200 = 200 A) 5 - Circuit configuration (T = Half bridge) 6 - Package indicator (P = INT-A-PAK IGBT) 7 - Voltage rating (065 = 650 V) 8 - Speed/type (N = ultrafast) Revision: 11-Jun-15 Document Number: 93567 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT200TP065N www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters 40 17 3-M5.0 23 34 6 7 17 12.50 5 4 4.50 23 3 2 1 4.50 80 7.50 2-Ø 6.4 94.10 18.98 18.97 13 13 13 6.20 30.13 22.50 22.20 31.40 Revision: 11-Jun-15 Document Number: 93567 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000