VS-GB400TH120U Datasheet

VS-GB400TH120U
www.vishay.com
Vishay Semiconductors
Molding Type Module IGBT,
2 in 1 Package, 1200 V and 400 A
FEATURES
• 10 μs short circuit capability
• Low switching losses
• Rugged with ultrafast performance
• VCE(on) with positive temperature coefficient
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
Double INT-A-PAK
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRODUCT SUMMARY
VCES
1200 V
• Inductive heating
IC at TC = 80 °C
400 A
• Switching mode power supplies
VCE(on) (typical)
at IC = 400 A, TJ = 25 °C
3.10 V
Speed
8 kHz to 30 kHz
Package
Double INT-A-PAK
Circuit
Half bridge
• Electronic welder
DESCRIPTION
Vishay’s IGBT power module provides ultrafast switching
speed as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
Collector to emitter voltage
VCES
1200
Gate to emitter voltage
VGES
± 20
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
Maximum power dissipation
Short circuit withstand time
RMS isolation voltage
UNITS
V
TC = 25 °C
660
TC = 80 °C
400
tp = 1 ms
800
TC = 80 °C
400
tp = 1 ms
800
PD
TJ = 150 °C
2660
W
TSC
TJ = 125 °C
10
μs
2500
V
IC
ICM
(1)
IF
IFM
(1)
VISOL
f = 50 Hz, t = 1 min
A
Note
(1) Repetitive rating: pulse width limited by maximum junction temperature.
Revision: 12-Jun-15
Document Number: 94789
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB400TH120U
www.vishay.com
Vishay Semiconductors
IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V(BR)CES
TEST CONDITIONS
TJ = 25 °C
MIN.
TYP.
MAX.
1200
-
-
VGE = 15 V, IC = 400 A, TJ = 25 °C
-
3.10
3.60
VGE = 15 V, IC = 400 A, TJ = 125 °C
-
3.45
-
UNITS
Collector to emitter voltage
VCE(on)
V
Gate to emitter threshold voltage
VGE(th)
VCE = VGE, IC = 4.0 mA, TJ = 25 °C
4.4
4.9
6.0
Collector cut-off current
ICES
VCE = VCES, VGE = 0 V, TJ = 25 °C
-
-
5.0
mA
Gate to emitter leakage current
IGES
VGE = VGES, VCE = 0 V, TJ = 25 °C
-
-
400
nA
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
SYMBOL
MIN.
TYP.
MAX.
td(on)
-
680
-
tr
-
142
-
td(off)
-
638
-
tf
TEST CONDITIONS
VCC = 600 V, IC = 400 A, Rg = 2.2 ,
VGE = ± 15 V, TJ = 25 °C
-
99
-
Turn-on switching loss
Eon
-
19.0
-
Turn-off switching loss
Eoff
-
32.5
-
Turn-on delay time
td(on)
-
690
-
tr
-
146
-
-
669
-
-
108
-
Rise time
Turn-off delay time
Fall time
td(off)
tf
VCC = 600 V, IC = 400 A, Rg = 2.2 ,
VGE = ± 15 V, TJ = 125 °C
Turn-on switching loss
Eon
-
26.1
-
Turn-off switching loss
Eoff
-
36.7
-
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
SC data
ISC
VGE = 0 V, VCE = 30 V, f = 1.0 MHz
tp  10 μs, VGE = 15 V, TJ = 25 °C, 
VCC = 600 V, VCEM  1200 V
-
33.7
-
-
2.99
-
-
1.21
-
-
2600
-
ns
mJ
ns
mJ
nF
A
Internal gate rsistance
Rg
-
0.5
-

Stray inductance
LCE
-
-
18
nH
-
0.32
-
m
MIN.
TYP.
MAX.
UNITS
Module lead resistance, terminal to chip
RCC’+EE’
TC = 25 °C
DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Forward voltage
VF
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery energy
Erec
TEST CONDITIONS
IF = 400 A
IF = 400 A, VR = 600 V,
dIF/dt = -2850 A/μs
VGE = -15 V
TJ = 25 °C
-
1.95
2.25
TJ = 125 °C
-
1.85
-
TJ = 25 °C
-
24.1
-
TJ = 125 °C
-
44.3
-
TJ = 25 °C
-
220
-
TJ = 125 °C
-
295
-
TJ = 25 °C
-
13.9
-
TJ = 125 °C
-
24.8
-
V
μC
A
mJ
Revision: 12-Jun-15
Document Number: 94789
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB400TH120U
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction temperature range
Storage temperature range
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
TJ
-
-
150
°C
TStg
-40
-
125
°C
-
-
0.047
-
-
0.096
-
0.035
-
IGBT
Junction to case
RJC
Diode
Case to sink (Conductive grease applied)
RCS
Power terminal screw: M5
2.5 to 5.0
Mounting screw: M6
3.0 to 6.0
Mounting torque
Nm
Weight
Weight of module
800
-
700
-
g
VCC = 600 V
Rg = 2.2 Ω
VGE = ± 15 V
TJ = 125 °C
100
600
Eon, Eoff (mJ)
25 °C
500
IC (A)
350
120
VGE = 15 V
400
125 °C
300
80
Eoff
60
40
Eon
200
20
100
0
0
0
1
2
3
4
5
0
200
400
VCE (V)
600
800
IC (A)
Fig. 1 - IGBT Typical Output Characteristics
Fig. 3 - IGBT Switching Loss vs. IC
200
800
VCE = 15 V
VCC = 600 V
IC = 400 A
VGE = ± 15 V
TJ = 125 °C
180
700
160
Eon, Eoff (mJ)
600
500
IC (A)
K/W
400
125 °C
300
200
140
Eon
120
100
80
Eoff
60
40
100
25 °C
20
0
0
4
5
6
7
8
9
10
11
VGE (V)
Fig. 2 - IGBT Typical Transfer Characteristics
0
5
10
15
20
25
Rg (Ω)
Fig. 4 - IGBT Switching Loss vs. Rg
Revision: 12-Jun-15
Document Number: 94789
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB400TH120U
www.vishay.com
Vishay Semiconductors
900
800
700
IC, Module
IC (A)
600
500
400
300
Rg = 2.2 Ω
VGE = ± 15 V
TJ = 125 °C
200
100
0
0
300
600
900
1200
1500
VCE (V)
Fig. 5 - RBSOA
10-1
ZthJC (K/W)
IGBT
10-2
10-3
10-3
10-2
10-1
100
101
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
800
35
700
30
600
25
E (mJ)
IF (A)
500
125 °C
400
Erec
20
15
300
25 °C
10
200
VCC = 600 V
Rg = 2.2 Ω
VGE = - 15 V
TJ = 125 °C
5
100
0
0
0
0.5
1
1.5
2
2.5
3
0
200
400
600
VF (V)
IF (A)
Fig. 7 - Diode Typical Forward Characteristics
Fig. 8 - Diode Switching Loss vs. IC
800
Revision: 12-Jun-15
Document Number: 94789
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GB400TH120U
www.vishay.com
Vishay Semiconductors
30
25
E (mJ)
20
Erec
15
10
VCC = 600 V
IC = 400 A
VGE = - 15 V
5
TJ = 125 °C
0
0
5
10
15
20
25
Rg (Ω)
Fig. 9 - Diode Switching Loss vs. Rg
100
DIODE
ZthJC (K/W)
10-1
10-2
10-3
10-3
10-2
10-1
100
101
t (s)
Fig. 10 - Diode Transient Thermal Impedance
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95538
Revision: 12-Jun-15
Document Number: 94789
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Double INT-A-PAK
DIMENSIONS in millimeters (inches)
2.8 x 0.5
23 ± 0.3
7.2 ± 0.5
31 ± 0.5
16
26
12
4.5
3-M6
30.5 ± 0.5
Mounting depth max. 11
28 ± 0.3
6
22
35.6
27 ± 0.4
0.2
30
48 ± 0.4
70
.4 ±
20.2
15 ± 0.4
Ø6
28 ± 0.3
6
93 ± 0.4
106.6
Revision: 27-May-13
Document Number: 95538
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
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Document Number: 91000