VS-GB400AH120U www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 1-in-1 Package, 1200 V and 400 A FEATURES • 10 μs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology Double INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRODUCT SUMMARY VCES 1200 V • Switching mode power supplies IC at TC = 80 °C 400 A • Inductive heating VCE(on) (typical) at IC = 400 A, 25 °C 3.10 V Speed 8 kHz to 30 kHz Package Double INT-A-PAK Circuit Single switch with AP diode • Electronic welder DESCRIPTION Vishay’s IGBT power module provides ultrafast switching speed as well as short circuit ruggedness. It is designed for applications such as electronic welder and inductive heating. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current at TJ = 150 °C Pulsed collector current IC ICM (1) UNITS V TC = 25 °C 550 TC = 80 °C 400 TC = 80 °C 800 A 400 Diode continuous forward current IF Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C 2841 W Short circuit withstand time tSC TJ = 125 °C 10 μs 2500 V RMS isolation voltage VISOL 800 f = 50 Hz, t = 1 min Note (1) Repetitive rating: pulse width limited by maximum junction temperature. Revision: 22-Oct-15 Document Number: 94790 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB400AH120U www.vishay.com Vishay Semiconductors IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 400 A, TJ = 25 °C - 3.10 3.60 VGE = 15 V, IC = 400 A, TJ = 125 °C - 3.45 - 4.4 4.90 3.60 UNITS Collector to emitter voltage VCE(on) V Gate to emitter threshold voltage VGE(th) VCE = VGE, IC = 4 mA, TJ = 25 °C Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA UNITS SWITCHING CHARACTERISTICS PARAMETER Turn-on delay time Rise time Turn-off delay time SYMBOL MIN. TYP. MAX. td(on) - 680 - tr - 142 - - 638 - td(off) TEST CONDITIONS VCC = 600 V, IC = 400 A, Rg = 2.2 , VGE = ± 15 V, TJ = 25 °C - 99 - Turn-on switching loss Eon - 19.0 - Turn-off switching loss Eoff - 32.5 - Turn-on delay time td(on) - 690 - tr - 146 - - 669 - Fall time Rise time Turn-off delay time Fall time tf td(off) tf VCC = 600 V, IC = 400 A, Rg = 2.2 , VGE = ± 15 V, TJ = 125 °C - 108 - Turn-on switching loss Eon - 26.1 - Turn-off switching loss Eoff - 36.7 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC Internal gate resistance Rg Stray inductance Module lead resistance, terminal to chip VGE = 0 V, VCE = 30 V, f = 1.0 MHz tp 10 μs, VGE = 15 V, TJ = 25 °C, VCC = 600 V, VCEM 1200 V LCE RCC’+EE’ TC = 25 °C ns mJ ns mJ - 33.7 - - 2.99 - - 1.21 - - 2600 - A - 0.5 - - - 18 nH - 0.32 - m UNITS nF DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy Erec TEST CONDITIONS IF = 400 A IF = 400 A, VR = 600 V, dIF/dt = -2850 A/μs, VGE = -15 V MIN. TYP. MAX. TJ = 25 °C - 1.95 2.35 TJ = 125 °C - 1.85 - TJ = 25 °C - 24.1 - TJ = 125 °C - 44.3 - TJ = 25 °C - 220 - TJ = 125 °C - 295 - TJ = 25 °C - 13.9 - TJ = 125 °C - 24.8 - V μC A mJ Revision: 22-Oct-15 Document Number: 94790 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB400AH120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature range Storage temperature range TEST CONDITIONS MIN. TYP. MAX. UNITS TJ - - 150 °C TStg -40 - 125 °C - - 0.044 - - 0.088 - 0.035 - IGBT Junction to case per module RthJC Diode Case to sink RthCS Conductive grease applied Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 6.0 Mounting torque Nm Weight 300 g 120 800 VCC = 600 V Rg = 2.2 Ω VGE = ± 15 V TJ = 125 °C VGE = 15 V 700 100 600 Eon, Eoff (mJ) 25 °C 500 IC (A) K/W 400 125 °C 300 80 Eoff 60 40 Eon 200 20 100 0 0 0 1 2 3 4 5 0 200 400 VCE (V) 800 IC (A) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. Collector Current 200 800 VCE = 20 V VCC = 600 V IC = 400 A VGE = ± 15 V TJ = 125 °C 180 700 160 600 Eon, Eoff (mJ) 140 500 IC (A) 600 400 125 °C 300 200 Eon 120 100 80 Eoff 60 40 100 20 25 °C 0 0 4 5 6 7 8 9 10 11 VGE (V) Fig. 2 - IGBT Typical Transfer Characteristics 0 5 10 15 20 25 Rg (Ω) Fig. 4 - IGBT Switching Loss vs. Gate Resistor Revision: 22-Oct-15 Document Number: 94790 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB400AH120U www.vishay.com Vishay Semiconductors 900 800 700 IC, Module 600 IC (A) 500 400 300 Rg = 2.2 Ω VGE = ± 15 V TJ = 125 °C 200 100 0 0 300 600 900 1200 1500 VCE (V) Fig. 5 - RBSOA 10-1 ZthJC (K/W) IGBT 10-2 10-3 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 800 35 700 30 600 25 Erec E (mJ) IF (A) 500 125 °C 400 300 25 °C 20 15 10 200 VCC = 600 V Rg = 2.2 Ω VGE = - 15 V TJ = 125 °C 5 100 0 0 0 0.5 1 1.5 2 2.5 3 0 200 400 600 VF (V) IF (A) Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 800 Revision: 22-Oct-15 Document Number: 94790 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB400AH120U www.vishay.com Vishay Semiconductors 30 25 E (mJ) 20 Erec 15 10 VCC = 600 V IC = 400 A VGE = - 15 V 5 TJ = 125 °C 0 0 5 10 15 20 25 Rg (Ω) Fig. 9 - Diode Switching Loss vs.Rg 100 DIODE ZthJC (K/W) 10-1 10-2 10-3 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 1 3 5 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95526 Revision: 22-Oct-15 Document Number: 94790 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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