PANASONIC DMA204A0

This product complies with the RoHS Directive (EU 2002/95/EC).
DMA204A0
Silicon PNP epitaxial planar type
For low frequency amplification
 Features

Package
 Low collector-emitter saturation voltage VCE(sat)
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
Dual DSA2401 (Individual)

Code
Mini6-G4-B

Pin Name
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
 Packaging

Marking Symbol: C0

Basic Part Number
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)

Internal Connection

Absolute Maximum Ratings Ta = 25°C
Parameter
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–15
V
Collector-emitter voltage (Base open)
VCEO
–10
V
Emitter-base voltage (Collector open)
VEBO
–7
V
Collector current
IC
– 0.5
A
Peak collector current
ICP
–1
A
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
(C1)
6
(B2)
5
(E2)
4
Tr1
Tr2
1
(E1)
2
(B1)
3
(C2)

Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 µA, IE = 0
–15
V
Collector-emitter voltage (Base open)
VCEO
IC = –1 mA, IB = 0
–10
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 µA, IC = 0
–7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –10 V, IE = 0
hFE1
VCE = –2 V, IC = – 0.5 A
130
hFE2
VCE = –2 V, IC = –1 A
60
Forward current transfer ratio *
–100
350
nA

Collector-emitter saturation voltage *
VCE(sat)
IC = – 0.4 A, IB = –8 mA
– 0.15
– 0.30
V
Base-emitter saturation voltage *
VBE(sat)
IC = – 0.4 A, IB = –8 mA
– 0.8
–1.2
V
VCE = –10 V, IC = –50 mA
250
MHz
VCB = –10 V, IE = 0, f = 1 MHz
18
pF
Transition frequency
Collector output capacitance
(Common base, input open circuited)
fT
Cob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: June 2010
ZJJ00608AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA204A0
DMA204A0_IC-VCE
DMA204A0_PT-Ta
PT  Ta
−600
IB = −2.0 mA
−1.2 mA
−400
−1.0 mA
− 0.8 mA
−300
200
− 0.6 mA
−200
100
− 0.4 mA
− 0.2 mA
−100
40
80
120
160
0
200
0
−2
−4
−10
Ta = 85°C
−30°C
−200
Ta = 85°C
25°C
−100
−30°C
−10
−102
0
−103
0
Collector current IC (mA)
− 0.8
VBE(sat)  IC
−10
Base-emitter saturation voltage VBE(sat) (V)
VCE = −10 V
Ta = 25°C
200
150
100
−1
IC / IB = 50
25°C
−30°C
Ta = 85°C
− 0.1
50
0
− 0.1
−1.2
DMA204A0_VBEsat-IC
fT  IC
250
− 0.4
Base-emitter voltage VBE (V)
DMA204A0_fT-IC
300
−1
0
−1
−10
Collector current IC (mA)
−100
− 0.01
−1
−10
−102
Collector current IC (mA)
ZJJ00608AED
−10
−102
−103
Collector current IC (mA)
Cob  VCB
25°C
−300
−30°C
DMA204A0_Cob-VCB
−500
−400
−1
25°C
100
−12
VCE = −2 V
− 0.01
−1
200
IC  VBE
IC / IB = 50
− 0.1
300
DMA204A0_IC-VBE
Collector current IC (mA)
Collector-emitter saturation voltage VCE(sat) (V)
−8
Ta = 85°C
400
Collector-emitter voltage VCE (V)
VCE(sat)  IC
−10
−6
VCE = −2 V
500
−103
Collector output capacitance
(Common base, input open circuited) Cob (pF)
0
DMA204A0_VCEsat-IC
Transition frequency fT (MHz)
−1.8 mA −1.6 mA
−1.4 mA
Forward current transfer ratio hFE
Ta = 25°C
−500
300
Ambient temperature Ta (°C)
2
hFE  IC
600
Collector current IC (mA)
Total power dissipation PT (mW)
400
0
DMA204A0_hFE-IC
IC  VCE
60
IE = 0
f = 1 MHz
Ta = 25°C
50
40
30
20
10
0
−1
−10
−100
Collector-base voltage VCB (V)
This product complies with the RoHS Directive (EU 2002/95/EC).
DMA204A0
Mini6-G4-B
Unit: mm
+0.20
2.90 −0.05
+0.10
0.50 −0.05
+0.05
0.13 −0.02
+0.10
0.30 −0.05
1
2
3
(0.95)
(0.95)
1.9 ±0.1
0.4 ±0.2
(0.65)
6°
1.50 −0.05
+0.2
4
2.8 −0.3
5
+0.25
6
+0.3
1.1 −0.1
0 to 0.1
1.1 −0.1
+0.2
8°
ZJJ00608AED
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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