Composite Transistors XN09D61 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 1 2 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Basic Part Number • 2SA2046 + MA3ZD12 1.1+0.2 –0.1 Rating Unit VCBO −15 V Collector-emitter voltage (Base open) VCEO −15 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −1.5 A Peak collector current ICP −3 A Reverse voltage VR 20 V Repetitive peak reverse voltage VRRM 25 V Forward current (Average) IF(AV) 700 mA Non-repetitive peak IFSM 2 A PT 600 mW 0 to 0.1 Parameter SBD Symbol Collector-base voltage (Emitter open) 1: Emitter 2: Base 3: Anode Total power dissipation * Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 4: Collector (Cathode) 5: Collector (Cathode) 6: Collector (Cathode) Mini6-G1 Package Marking Symbol: RA Internal Connection forward surge current Overall 1.1+0.3 –0.1 Display at No.1 lead 10° ■ Absolute Maximum Ratings Ta = 25°C Tr 2.8+0.2 –0.3 4 5° • Two elements incorporated into one package (Tr + SBD) • Reduction of the mounting area and assembly cost by one half • Low collector-emitter saturation voltage VCE(sat) 5 1.50+0.25 –0.05 6 (0.65) ■ Features 0.4±0.2 For DC-DC converter 6 5 4 1 2 3 Note) *: Measuring on ceramic substrate at 15 mm × 15 mm × 0.6 mm ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −15 V Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −15 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 hFE VCE = −2 V, IC = −100 mA VCE(sat) IC = −750 mA, IB = −15 mA −90 IC = −1.5 A, IB = −50 mA −130 Forward current transfer ratio * Collector-emitter saturation voltage * Conditions Min Typ Max Unit V − 0.1 160 µA 560 −200 mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Publication date: June 2003 SJJ00247BED 1 XN09D61 ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C • Tr (continued) Parameter Symbol Collector output capacitance (Common base, input open circuited) Cob Typ Max Unit VCB = −10 V, IE = 0, f = 1 MHz 25 35 pF fT VCB = −2 V, IE = 100 mA, f = 200 MHz 270 MHz Turn-on time ton Refer to the switching time measurement circuit 25 ns Storage time tstg 70 ns Turn-off time toff 15 ns Transition frequency Conditions Min Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Switching time measurement circuit IB2 IB1 Input Output RB PW = 20 µs DC ≤ 1% RL 470 µF VCC = −5 V −20IB1 = 20IB2 = IC = −750 mA • SBD Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 700 mA 0.45 V Reverse current IR VR = 20 V 200 µA Terminal capacitance Ct VR = 0, f = 1 MHz Reverse recovery time trr IF = IR = 100 mA, Irr = 10 mA RL = 100 Ω 100 pF 7 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for diodes. 2. Schottky barrier diode is frail with static electricity, and it should be kept in safety from shock of static electricity and static electricity level. Common characteristics chart Total power dissipation PT (mW) PT Ta 600 400 200 0 0 40 80 120 Ambient temperature Ta (°C) 2 SJJ00247BED XN09D61 Characteristics charts of Tr IC VCE IC I B Collector current IC (A) −250 µA − 0.06 −200 µA −150 µA − 0.04 −100 µA − 0.02 0 −50 µA 0 −2 −4 −6 − 0.20 − 0.03 Base current IB (A) IB = −300 µA − 0.08 − 0.15 − 0.02 − 0.10 − 0.01 − 0.05 0 −8 0 Collector-emitter voltage VCE (V) VCE = −2 V Collector current IC (A) Ta = 75°C − 0.08 25°C −25°C − 0.04 0 Collector-emitter saturation voltage VCE(sat) (V) IC VBE − 0.12 − 0.4 − 0.4 − 0.8 −1.2 Base-emitter voltage VBE (V) − 0.8 − 0.2 0 − 0.4 − 0.6 − 0.8 Base-emitter voltage VBE (V) VCE(sat) IC hFE IC −10 IC / IB = 50 −1 − 0.01 − 0.01 0 −1.2 Base current IB (mA) Ta = 75°C 25°C −25°C − 0.1 0 VCE = −2 V Ta = 25°C VCE = −2 V Ta = 25°C − 0.1 −1 Collector current IC (A) VCE = −2 V Forward current transfer ratio hFE Ta = 25°C IB VBE − 0.04 − 0.25 Collector current IC (A) − 0.10 −10 300 Ta = 75°C 25°C 200 −25°C 100 0 − 0.001 − 0.01 − 0.1 −1 −10 Collector current IC (A) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 1 000 f = 1 MHz Ta = 25°C 100 10 0 −10 −20 −30 Collector-base voltage VCB (V) SJJ00247BED 3 XN09D61 Characteristics charts of SBD IF V F IR Ta 25°C 0.4 −25°C 0 0.4 0.8 Forward voltage VF (V) 4 1.2 1 000 Terminal capacitance Ct (pF) Ta = 85°C 0.8 0 Ct VR 104 Reverse current IR (mA) Forward current IF (A) 1.2 103 102 10 1 −25 −5 15 35 55 75 Ambient temperature Ta (°C) SJJ00247BED f = 1 MHz Ta = 25°C 100 10 0 10 20 Reverse voltage VR (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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