SQM200N04-1m1L Datasheet

SQM200N04-1m1L
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
40
RDS(on) () at VGS = 10 V
0.0011
RDS(on) () at VGS = 4.5 V
0.0013
ID (A)
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
200
Configuration
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Single
D
TO-263-7L
G
Drain connected to Tab
G SS DS SS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-263-7L
Lead (Pb)-free and Halogen-free
SQM200N04-1m1L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
200
200
IS
200
IDM
600
IAS
100
EAS
500
PD
UNIT
375
125
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
RthJA
40
RthJC
0.4
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-2164-Rev. A, 24-Sep-12
Document Number: 62679
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM200N04-1m1L
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
-
-
50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 40 V, TJ = 125 °C
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
500
On-State Drain Currenta
ID(on)
VGS = 10 V
VDS5 V
200
-
-
VGS = 10 V
ID = 30 A
-
0.0008
0.0011
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.0019
VGS = 10 V
ID = 30 A, TJ = 175 °C
-
-
0.0023
VGS = 4.5 V
ID = 20 A
-
0.0009
0.0013
-
219
-
-
16 524
20 655
-
2060
2575
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
gfs
VDS = 15 V, ID = 30 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
484
605
Total Gate Chargec
Qg
-
275
413
-
56.6
-
-
45.4
-
f = 1 MHz
4.2
8.5
12.8
-
13
20
VDD = 20 V, RL = 1 
ID  20 A, VGEN = 10 V, Rg = 1 
-
12
18
-
443
665
-
126
189
-
-
600
A
-
0.8
1.5
V
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 20 V, ID = 20 A
td(on)
tr
td(off)
tf
pF
nC

ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 60 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2164-Rev. A, 24-Sep-12
Document Number: 62679
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM200N04-1m1L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
160
250
VGS = 10 V thru 6 V
VGS = 5 V
VGS = 4 V
120
ID - Drain Current (A)
ID - Drain Current (A)
200
150
VGS = 3 V
100
80
TC = 125 °C
40
TC = 25 °C
50
TC = - 55 °C
0
0
0
2
4
6
8
0
10
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
10
450
TC = - 55 °C
360
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
1.2
0.8
TC = 25 °C
0.4
TC = 125 °C
270
TC = 125 °C
180
90
TC = - 55 °C
0.0
0
0
1
2
3
4
5
0
14
28
42
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Transconductance
0.0025
25 000
0.0020
20 000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = 25 °C
0.0015
VGS = 4.5 V
0.0010
VGS = 10 V
0.0005
56
70
32
40
Ciss
15 000
10 000
5000
Coss
Crss
0.0000
0
0
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
S12-2164-Rev. A, 24-Sep-12
120
0
8
16
24
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 62679
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM200N04-1m1L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.4
ID = 20 A
VDS = 20 V
ID = 30 A
2.1
8
VGS = 10 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
10
6
4
2
1.8
1.5
VGS = 4.5 V
1.2
0.9
0.6
- 50 - 25
0
0
60
120
180
240
300
0
Qg - Total Gate Charge (nC)
0.005
10
0.004
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
75
100
125
150
175
On-Resistance vs. Junction Temperature
100
TJ = 150 °C
TJ = 25 °C
0.1
50
TJ - Junction Temperature (°C)
Gate Charge
1
25
0.01
0.003
0.002
TJ = 150 °C
0.001
TJ = 25 °C
0.001
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
VSD - Source-to-Drain Voltage (V)
6
8
10
VGS - Gate-to-Source Voltage (V)
50
VDS - Drain-to-Source Voltage (V)
0.5
0.1
VGS(th) Variance (V)
4
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
- 0.3
ID = 5 mA
- 0.7
- 1.1
ID = 250 μA
- 1.5
- 50 - 25
2
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
S12-2164-Rev. A, 24-Sep-12
125
150
175
48
ID = 10 mA
46
44
42
40
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 62679
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM200N04-1m1L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
ID - Drain Current (A)
100
IDM Limited
100 μs
ID Limited
1 ms
10 ms
100 ms, 1 s, 10 s, DC
10
Limited by RDS(on)*
1
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2164-Rev. A, 24-Sep-12
Document Number: 62679
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQM200N04-1m1L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62679.
S12-2164-Rev. A, 24-Sep-12
Document Number: 62679
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
D2PAK / TO-263 and TO-262
Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQM100N04-2m7
SQM100N04-2M7-GE3
SQM100N04-2M7_GE3
SQM100N10-10
SQM100N10-10-GE3
SQM100N10-10_GE3
SQM110N05-06L
SQM110N05-06L-GE3
SQM110N05-06L_GE3
SQM110P06-8m9L
SQM110P06-8M9L-GE3
SQM110P06-8M9L_GE3
SQM120N02-1m3L
SQM120N02-1M3L-GE3
SQM120N02-1M3L_GE3
SQM120N03-1m5L
SQM120N03-1M5L-GE3
SQM120N03-1M5L_GE3
SQM120N04-1m7
SQM120N04-1M7-GE3
SQM120N04-1M7_GE3
SQM120N04-1m7L
SQM120N04-1M7L-GE3
SQM120N04-1M7L_GE3
SQM120N04-1m9
SQM120N04-1M9-GE3
SQM120N04-1M9_GE3
SQM120N06-06
SQM120N06-06-GE3
SQM120N06-06_GE3
SQM120N06-3m5L
SQM120N06-3M5L-GE3
SQM120N06-3M5L_GE3
SQM120N10-09
SQM120N10-09-GE3
SQM120N10-09_GE3
SQM120N10-3m8
SQM120N10-3M8-GE3
SQM120N10-3M8_GE3
SQM120P04-04L
SQM120P04-04L-GE3
SQM120P04-04L_GE3
SQM120P06-07L
SQM120P06-07L-GE3
SQM120P06-07L_GE3
SQM120P10-10m1L
-
SQM120P10_10m1LGE3
SQM200N04-1m1L
SQM200N04-1M1L-GE3
SQM200N04-1M1L_GE3
SQM200N04-1m7L
SQM200N04-1M7L-GE3
SQM200N04-1M7L_GE3
SQM200N04-1m8
SQM200N04-1M8-GE3
SQM200N04-1M8_GE3
SQM25N15-52
SQM25N15-52-GE3
SQM25N15-52_GE3
SQM35N30-97
SQM35N30-97-GE3
SQM35N30-97_GE3
SQM40N10-30
SQM40N10-30-GE3
SQM40N10-30_GE3
SQM40N15-38
SQM40N15-38-GE3
SQM40N15-38_GE3
SQM40P10-40L
SQM40P10-40L-GE3
SQM40P10-40L_GE3
SQM47N10-24L
SQM47N10-24L-GE3
SQM47N10-24L_GE3
SQM50020EL
-
SQM50020EL_GE3
SQM50N04-4m0L
SQM50N04-4M0L-GE3
SQM50N04-4M0L_GE3
SQM50N04-4m1
SQM50N04-4M1-GE3
SQM50N04-4M1_GE3
SQM50P03-07
SQM50P03-07-GE3
SQM50P03-07_GE3
SQM50P04-09L
SQM50P04-09L-GE3
SQM50P04-09L_GE3
SQM50P06-15L
SQM50P06-15L-GE3
SQM50P06-15L_GE3
SQM50P08-25L
SQM50P08-25L-GE3
SQM50P08-25L_GE3
SQM60030E
-
SQM60030E_GE3
SQM60N06-15
SQM60N06-15-GE3
SQM60N06-15_GE3
SQM60N20-35
SQM60N20-35-GE3
SQM60N20-35_GE3
SQM85N15-19
SQM85N15-19-GE3
SQM85N15-19_GE3
SQV120N10-3m8
SQV120N10-3m8-GE3
SQV120N10-3m8_GE3
SQV120N06-4m7L
-
SQV120N06-4m7L_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 24-Mar-16
Document Number: 67164
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
D2PAK (TO-263-7L) Case Outline
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin to pin coplanarity max. 4 mils.
4. Lead thickness 25 mils.
5. For SUM part numbers lead thickness is 24 mils to 29 mils.
6. For reference only.
7. Use inches as the primary measurement.
8. This feature is only for SUM.
INCHES
MILLIMETERS
DIM.
MIN.
MAX.
MIN.
MAX.
A
0.160
0.190
4.064
4.826
b
0.020
0.039
0.508
0.990
b1
0.020
0.035
0.508
0.889
b2
0.045
0.055
1.143
1.397
c* SUB
0.012
0.018
0.305
0.457
c* SUM
0.022
0.028
0.559
0.711
c1
0.018
0.025
0.457
0.635
c2
0.045
0.055
1.143
1.397
D
0.340
0.380
8.636
9.652
D1
0.220
0.240
5.588
6.096
D2
0.038
0.042
0.965
1.067
D3
0.045
0.055
1.143
1.397
E
0.380
0.410
9.652
10.414
E1
0.245
-
6.223
-
E2
0.072
0.078
1.829
1.981
0.050 BSC
e
1.27 BSC
K
0.045
0.055
1.143
1.397
L
0.575
0.625
14.605
15.875
L1
0.090
0.110
2.286
2.794
L2
0.040
0.055
1.016
1.397
L3
0.050
0.070
1.270
1.778
0.010 BSC
L4
M
-
0.002
0.254 BSC
-
0.050
ECN: T13-0709-Rev. B, 30-Sep-13
DWG: 6006
Revision: 30-Sep-13
1
Document Number: 63782
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000