SQR50N04-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0038 ID (A) 50 Configuration Single TO-252 Reverse Lead DPAK TrenchFET® Power MOSFET Package with Low Thermal Resistance AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D G Drain Connected to Tab G D N-Channel MOSFET S S Top View ORDERING INFORMATION Package TO-252 Reverse Lead DPAK Lead (Pb)-free and Halogen-free SQR50N04-3m8-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Currenta Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 50 50 IS 50 IDM 200 IAS 62 EAS 192 PD UNIT 136 45 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 50 RthJC 1.1 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S13-0451-Rev. A, 04-Mar-13 Document Number: 62783 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR50N04-3m8 www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = 40 V - - 1 - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 40 V, TJ = 125 °C VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 On-State Drain Currenta ID(on) VGS = 10 V VDS5 V 50 - - VGS = 10 V ID = 20 A - 0.0030 0.0038 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.0064 VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.0076 - 120 - Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VDS = 15 V, ID = 15 A V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 50 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 0.4 ID 50 A, VGEN = 10 V, Rg = 1 tf - 5360 6700 - 500 627 - 250 310 - 70 105 - 16 - - 13 - 0.9 1.9 2.9 - 11 16 pF nC - 5 8 - 34 51 - 9 14 - - 200 A - 0.9 1.5 V ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 30 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0451-Rev. A, 04-Mar-13 Document Number: 62783 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR50N04-3m8 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 100 V GS = 10 V thru 5 V 80 ID - Drain Current (A) ID - Drain Current (A) 80 60 40 V GS = 4 V 20 60 40 T C = 25 °C 20 T C = 125 °C T C = - 55 °C 0 0 0 3 6 9 12 15 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 350 10 0.010 TC = - 55 °C 0.008 TC = 25 °C RDS(on) - Resistance (Ω) gfs - Transconductance (S) 280 210 TC = 125 °C 140 70 0.006 0.004 VGS = 10 V 0.002 0 0 14 28 42 56 70 0.000 0 ID - Drain Current (A) 20 40 60 ID - Drain Current (A) 80 Transconductance On-Resistance vs. Drain Current 100 10 7000 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) ID = 50 A Ciss 6000 5000 4000 3000 2000 Coss 8 V DS = 20 V 6 4 2 1000 Crss 0 0 0 10 20 30 VDS - Drain-to-Source Voltage (V) Capacitance S13-0451-Rev. A, 04-Mar-13 40 0 10 20 30 40 50 60 70 80 90 Qg - Total Gate Charge (nC) Gate Charge Document Number: 62783 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR50N04-3m8 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 V GS = 10 V ID = 20 A 10 1.7 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.0 V GS = 6 V 1.4 1.1 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.8 0.5 - 50 0.001 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 0 175 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 0.7 0.030 0.025 0.2 VGS(th) Variance (V) RDS(on) - Resistance (Ω) 0.2 0.020 0.015 0.010 TJ = 150 °C - 0.3 ID = 5 mA - 0.8 ID = 250 μA - 1.3 0.005 TJ = 25 °C - 1.8 - 50 0.000 0 2 4 6 8 10 - 25 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 125 150 175 VDS - Drain-to-Source Voltage (V) 54 ID = 10 mA 52 50 48 46 44 42 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S13-0451-Rev. A, 04-Mar-13 Document Number: 62783 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR50N04-3m8 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 Limited by R DS(on)* 10 100 µs 1 ms ID Limited 10 ms, 100 ms, 1 s, 10 s, DC 1 0.1 0.01 0.01 BVDSS Limited TC = 25 °C Single Pulse 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which R DS(on) is specified 100 Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S13-0451-Rev. A, 04-Mar-13 Document Number: 62783 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQR50N04-3m8 www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62783. S13-0451-Rev. A, 04-Mar-13 Document Number: 62783 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix DPAK / TO-252 and Reverse DPAK Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages: DATASHEET PART NUMBER OLD ORDERING CODE a SQD07N25-350H SQD07N25-350H-GE3 SQD07N25-350H_GE3 SQD100N02-3m5L - SQD100N02-3m5L_GE3 SQD100N03-3m2L SQD100N03-3M2L-GE3 SQD100N03-3M2L_GE3 SQD100N03-3m4 SQD100N03-3M4-GE3 SQD100N03-3M4_GE3 NEW ORDERING CODE SQD100N04-3m6 SQD100N04-3M6-GE3 SQD100N04-3M6_GE3 SQD100N04-3m6L SQD100N04-3M6L-GE3 SQD100N04-3M6L_GE3 SQD10N30-330H SQD10N30-330H-GE3 SQD10N30-330H_GE3 SQD15N06-42L SQD15N06-42L-GE3 SQD15N06-42L_GE3 SQD19P06-60L SQD19P06-60L-GE3 SQD19P06-60L_GE3 SQD23N06-31L SQD23N06-31L-GE3 SQD23N06-31L_GE3 SQD25N06-22L SQD25N06-22L-GE3 SQD25N06-22L_GE3 SQD25N15-52 SQD25N15-52-GE3 SQD25N15-52_GE3 SQD30N05-20L SQD30N05-20L-GE3 SQD30N05-20L_GE3 SQD40N06-14L SQD40N06-14L-GE3 SQD40N06-14L_GE3 SQD40N10-25 SQD40N10-25-GE3 SQD40N10-25_GE3 SQD40P10-40L SQD40P10-40L-GE3 SQD40P10-40L_GE3 SQD45P03-12 SQD45P03-12-GE3 SQD45P03-12_GE3 SQD50N04-5m6 SQD50N04-5M6-GE3 SQD50N04-5M6_GE3 SQD50N04-5m6L - SQD50N04-5m6L_GE3 SQD50N05-11L SQD50N05-11L-GE3 SQD50N05-11L_GE3 SQD50N06-09L SQD50N06-09L-GE3 SQD50N06-09L_GE3 SQD50N10-8m9L SQD50N10-8M9L-GE3 SQD50N10-8M9L_GE3 SQD50P03-07 SQD50P03-07-GE3 SQD50P03-07_GE3 SQD50P04-13L SQD50P04-13L-GE3 SQD50P04-13L_GE3 SQD50P04-09L SQD50P04-09L-GE3 SQD50P04-09L_GE3 SQD50P06-15L SQD50P06-15L-GE3 SQD50P06-15L_GE3 SQD50P08-25L SQD50P08-25L-GE3 SQD50P08-25L_GE3 SQD50P08-28 SQD50P08-28-GE3 SQD50P08-28_GE3 SQD90P04-9m4L SQD90P04-9M4L-GE3 SQD90P04-9M4L_GE3 SQD97N06-6m3L SQD97N06-6M3L-GE3 SQD97N06-6M3L_GE3 SQR40N10-25 SQR40N10-25-GE3 SQR40N10-25_GE3 SQR50N04-3m8 SQR50N04-3M8-GE3 SQR50N04-3M8_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 11-Nov-15 Document Number: 66957 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252 Reverse Lead Case Outline E b2 C1 M L2 A H D M E1 Area Z A1 D1 b b1 E1 Gage plane height (0.020) L3 L1 L A2 e C e1 Notes • Dimension L3 for reference only • Area Z: unplated area DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A 2.23 2.33 0.088 0.092 A1 0.64 0.89 0.025 0.035 A2 0.03 0.23 0.001 0.009 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 D1 4.49 5.00 0.177 0.197 E 6.48 6.73 0.255 0.265 E1 4.32 - 0.170 e 2.28 BSC e1 4.57 BSC 0.180 BSC H 9.65 10.41 0.380 L 1.40 1.78 0.055 L1 0.090 BSC 2.74 BSC 0.410 0.070 0.108 BSC L2 0.89 1.27 0.035 L3 1.15 1.52 0.040 0.050 0.060 M - 1.00 - 0.039 ECN: T16-0289-Rev. C, 06-Jun-16 DWG: 5894 Revision: 06-Jun-16 Document Number: 72206 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000