PANASONIC MA27P01

PIN diodes
MA27P01
Silicon epitaxial planar type
Unit: mm
0.27+0.05
–0.02
For high frequency switch
0.13+0.05
–0.02
Symbol
Rating
Unit
VR
60
V
Forward current (DC)
IF
100
mA
Power dissipation *
PD
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.01
Parameter
Reverse voltage (DC)
0.52±0.03
■ Absolute Maximum Ratings Ta = 25°C
0.15 max.
0.60±0.05
0.15 min.
1
5°
0.15 min.
• Low terminal capacitance: Ct ≤ 0.8 pF
• Low forward dynamic resistance: rf ≤ 1.0 Ω
• Ultraminiature package and surface mounting type
1.0 mm × 0.6 mm (height: 0.52 mm)
5°
1.00±0.05
■ Features
1.40±0.05
2
1: Anode
2: Cathode
SSSMini2-F2 Package
Marking Symbol: N
Note) *: With a glass epoxy board
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 60 V
100
nA
Forward voltage (DC)
VF
IF = 10 mA
1.0
V
Terminal capacitance
Ct
VR = 1 V, f = 1 MHz
0.8
pF
Forward dynamic resistance *
rf
IF = 10 mA, f = 100 MHz
1.0
Ω
Note) *: Measuring instrument; AGILENT MODEL 4291B
Publication date: April 2002
SKL00007AED
1
MA27P01
IF  V F
I R  VR
103
Ct  VR
103
1
Ta = 150°C
102
Ta = 150°C
1
25°C
Terminal capacitance Ct (pF)
−20°C
100°C
10
Reverse current IR (nA)
Forward current IF (mA)
102
100°C
10
1
10−1
10−2
25°C
10−1
f = 1 MHz
Ta = 25°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10−3
0.1
10−2
−4
0
0.2
0.4
0.6
0.8
1.0
1.2
Forward voltage VF (V)
0
10
0
10
20
30
40
rf  I F
Forward dynamic resistance rf (Ω)
103
f = 100 MHz
Ta = 25°C
102
10
1
10−1
0.01
0.1
1
10
Forward current IF (mA)
2
50
Reverse voltage VR (V)
SKL00007AED
60
0
10
20
30
40
50
Reverse voltage VR (V)
60
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2001 MAR