SQP100N04-3m6 Datasheet

SQP100N04-3m6
www.vishay.com
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
40
RDS(on) () at VGS = 10 V
0.0036
ID (A)
100
Configuration
Single
Package
TO-220
TrenchFET® power MOSFET
Package with low thermal resistance
AEC-Q101 qualified d
100 % Rg and UIS tested
Material categorization: 
for definitions of compliance please see
www.vishay.com/doc?99912
TO-220AB
D
G
Top View
G
D
S
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
SYMBOL
VDS
LIMIT
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C a
TC = 125 °C
Continuous Source Current (Diode Conduction) a
Pulsed Drain
Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
74
100
IDM
400
IAS
60
EAS
180
TJ, Tstg
V
100
IS
PD
UNIT
120
40
A
mJ
W
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
1.25
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S15-2651-Rev. B, 16-Nov-15
Document Number: 63547
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP100N04-3m6
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0 V, ID = 250 μA
40
-
-
VGS(th)
VDS = VGS, ID = 250 μA
2.5
3.0
3.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = 40 V
-
-
1
VGS = 0 V
VDS = 40 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 40 V, TJ = 175 °C
-
-
250
VGS = 10 V
VDS5 V
50
-
-
VGS = 10 V
ID = 30 A
-
0.0030
0.0036
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.0060
VGS = 10 V
ID = 30 A, TJ = 175 °C
-
-
0.0072
-
200
-
-
5700
7200
VDS = 15 V, ID = 30 A
V
nA
μA
A

S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
-
600
750
Reverse Transfer Capacitance
Crss
-
264
330
Total Gate Charge c
Qg
-
90
135
Gate-Source Charge
c
Gate-Drain Charge c
Gate Resistance
Turn-On Delay
Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
Qgs
VGS = 0 V
VGS = 10 V
VDS = 25 V, f = 1 MHz
VDS = 20 V, ID = 50 A
-
25
-
-
15
-
f = 1 MHz
0.7
1.5
2.8
-
12
18
VDD = 20 V, RL = 0.4 
ID  50 A, VGEN = 10 V, Rg = 1 
-
10
15
-
35
53
-
9
14
-
-
400
A
-
0.9
1.5
V
Qgd
Rg
td(on)
tr
td(off)
pF
tf
nC

ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = 70 A, VGS = 0 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.




Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2651-Rev. B, 16-Nov-15
Document Number: 63547
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP100N04-3m6
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
100
V GS = 10 V thru 5 V
80
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
V GS = 4 V
20
60
40
T C = 25 °C
20
T C = 125 °C
T C = - 55 °C
0
0
0
3
6
9
12
0
15
2
4
6
8
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
350
10
0.010
TC = - 55 °C
TC = 25 °C
0.008
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
280
210
TC = 125 °C
140
70
0.006
0.004
VGS = 10 V
0.002
0
0.000
0
14
28
42
56
70
ID - Drain Current (A)
0
40
60
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
80
100
10
VGS - Gate-to-Source Voltage (V)
8000
Ciss
C - Capacitance (pF)
20
6000
4000
2000
Coss
ID = 50 A
VDS = 20 V
8
6
4
2
Crss
0
0
0
8
16
24
32
VDS - Drain-to-Source Voltage (V)
Capacitance
S15-2651-Rev. B, 16-Nov-15
40
0
20
40
60
80
100
Q g - Total Gate Charge (nC)
Gate Charge
Document Number: 63547
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP100N04-3m6
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
V GS = 10 V
ID = 20 A
1.7
10
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.0
V GS = 6 V
1.4
1.1
0.8
T J = 150 °C
1
T J = 25 °C
0.1
0.01
0.5
0.001
-50
-25
0
25
50
75
100
125
150
175
0
0.2
On-Resistance vs. Junction Temperature
0.6
0.8
1.0
1.2
Source Drain Diode Forward Voltage
0.025
0.7
0.020
0.2
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
0.4
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
0.015
0.010
-0.3
ID = 250 μA
-0.8
ID = 5 mA
TJ = 150 °C
-1.3
0.005
TJ = 25 °C
0.000
0
2
4
6
8
10
-1.8
-50
-25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
VDS - Drain-to-Source Voltage (V)
54
ID = 10 mA
52
50
48
46
44
42
-50
-25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S15-2651-Rev. B, 16-Nov-15
Document Number: 63547
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP100N04-3m6
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
IDM Limited
ID - Drain Current (A)
100
100 μs
1 ms
ID Limited
10
10 ms
100 ms, 1 s,10 s, DC
1
Limited by RDS(on)*
BVDSS Limited
0.1
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2651-Rev. B, 16-Nov-15
Document Number: 63547
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP100N04-3m6
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 5
10- 4
10- 3
10- 2
Square Wave Pulse Duration (sec)
10- 1
1
3
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63547.
S15-2651-Rev. B, 16-Nov-15
Document Number: 63547
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP100N04-3m6
www.vishay.com
REVISION HISTORY
REVISION
B
DATE
04-Nov-15
Vishay Siliconix
a
DESCRIPTION OF CHANGE
• Changed capacitance, gate charge, gate resistance, and rise time
Note
a. As of Apr 2014
S15-2651-Rev. B, 16-Nov-15
Document Number: 63547
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
TO-220
Ordering codes for the SQ rugged series power MOSFETs in the TO-220 package:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQP100N04-3m6
-
SQP100N04-3M6_GE3
SQP100P06-9m3L
-
SQP100P06-9M3L_GE3
SQP120N06-06
-
SQP120N06-06_GE3
SQP120N06-3m5L
SQP120N06-3M5L-GE3
SQP120N06-3M5L_GE3
SQP120N10-09
SQP120N10-09-GE3
SQP120N10-09_GE3
SQP120N10-3m8
SQP120N10-3M8-GE3
SQP120N10-3M8_GE3
SQP25N15-52
-
SQP25N15-52_GE3
SQP50N06-09L
SQP50N06-09L-GE3
SQP50N06-09L_GE3
SQP50P03-07
SQP50P03-07-GE3
SQP50P03-07_GE3
SQP60N06-15
SQP60N06-15-GE3
SQP60N06-15_GE3
SQP90P06-07L
SQP90P06-07L-GE3
SQP90P06-07L_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 12-Nov-15
Document Number: 67167
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
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Revision: 02-Oct-12
1
Document Number: 91000