SQD45P03-12 Datasheet

SQD45P03-12
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Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
- 30
RDS(on) () at VGS = - 10 V
0.010
RDS(on) () at VGS = - 4.5 V
0.024
ID (A)
• Package with Low Thermal Resistance
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
- 50
Configuration
Single
TO-252
S
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G
Drain Connected to Tab
G
D
S
D
P-Channel MOSFET
Top View
ORDERING INFORMATION
Package
TO-252
Lead (Pb)-free and Halogen-free
SQD45P03-12-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
TC = 25 °Ca
Continuous Drain Current
Continuous Source Current (Diode
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
V
- 50
- 37
IS
- 50
IDM
- 200
IAS
- 31
EAS
48
PD
UNIT
71
23
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB
Mountc
RthJA
50
RthJC
2.1
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
- 30
-
-
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS = ± 20 V
-
-
± 100
-
-
-1
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
VGS = 0, ID = - 250 μA
VDS = VGS, ID = - 250 μA
IGSS
Zero Gate Voltage Drain Current
Transconductanceb
VDS
VGS(th)
RDS(on)
gfs
VGS = 0 V
VDS = - 30 V
VGS = 0 V
VDS = - 30 V, TJ = 125 °C
-
-
- 50
VGS = 0 V
VDS = - 30 V, TJ = 175 °C
-
-
- 150
VGS = - 10 V
VDS- 5 V
- 50
-
-
VGS = - 10 V
ID = - 15 A
-
0.008
0.010
VGS = - 10 V
ID = - 15 A, TJ = 125 °C
-
-
0.015
VGS = - 10 V
ID = - 15 A, TJ = 175 °C
-
-
0.017
VGS = - 4.5 V
ID = - 12 A
-
0.019
0.024
-
34
-
-
2794
3495
-
616
770
-
470
590
VDS = - 15 V, ID = - 17 A
V
nA
μA
A

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Source-Drain Diode Ratings and
Rg
VGS = 0 V
VGS = - 10 V
VDS = - 15 V, f = 1 MHz
VDS = - 15 V, ID = - 45 A
f = 1 MHz
td(on)
tr
td(off)
VDD = - 15 V, RL = 0.33 
ID  - 45 A, VGEN = - 10 V, Rg = 1 
tf
-
55.3
83
-
7.3
-
-
14
-
1.40
2.86
4.50
-
11
16.5
pF
nC

-
11
16.5
-
29
43.5
-
19
28.5
-
-
- 200
A
-
- 0.9
- 1.5
V
ns
Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = - 40 A, VGS = 0
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
100
VGS = 10 V thru 6 V
80
I D - Drain Current (A)
I D - Drain Current (A)
80
VGS = 5 V
60
40
VGS = 4 V
20
60
40
TC = 25 °C
20
TC = 125 °C
TC = - 55 °C
0
0
0
3
6
9
12
VDS - Drain-to-Source Voltage (V)
15
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
0.05
60
TC = - 55 °C
0.04
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
48
TC = 25 °C
TC = 125 °C
36
24
VGS = 4.5 V
0.03
0.02
VGS = 10 V
0.01
12
0.00
0
0
8
16
24
ID - Drain Current (A)
32
0
40
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
2.0
100
ID = 15 A
1.7
10
VGS = 10 V
I S - Source Current (A)
R DS(on) - On-Resistance (Normalized)
10
1.4
1.1
0.8
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S12-2095-Rev. C, 03-Sep-12
175
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
Document Number: 65549
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
0.10
0.08
0.06
0.04
0.02
TJ = 150 °C
TJ = 25 °C
0.00
8
VDS = 15 V
6
4
2
0
VGS - Gate-to-Source Voltage (V)
20
30
40
Qg - Total Gate Charge (nC)
On-Resistance vs. Gate-to-Source Voltage
Gate Charge
0
2
4
6
8
0
10
5000
1.1
4000
0.8
10
50
60
ID = 250 µA
VGS(th) Variance (V)
C - Capacitance (pF)
VGS - Gate-to-Source Voltage (V)
R DS(on) - On-Resistance (Ω)
ID = 45 A
Ciss
3000
2000
Coss
1000
0.5
ID = 5 mA
0.2
- 0.1
Crss
0
0
5
10
15
20
25
V DS - Drain-to-Source Voltage (V)
30
- 0.4
- 50
- 25
0
25
50
75
100
125
150
175
TJ - Temperature (°C)
Capacitance
Threshold Voltage
VDS - Drain-to-Source Voltage (V)
- 30
ID = 10 mA
- 32
- 34
- 36
- 38
- 40
- 50
- 25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150
175
Drain Source Breakdown vs. Junction Temperature
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
100
100 µs
ID - Drain Current (A)
Limited by RDS(on)*
ID Limited
10
1 ms
10 ms
100 ms
1 s, 10 s, DC
1
0.1
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQD45P03-12
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Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65549.
S12-2095-Rev. C, 03-Sep-12
Document Number: 65549
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
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Vishay Siliconix
DPAK / TO-252 and Reverse DPAK
Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
SQD07N25-350H
SQD07N25-350H-GE3
SQD07N25-350H_GE3
SQD100N02-3m5L
-
SQD100N02-3m5L_GE3
SQD100N03-3m2L
SQD100N03-3M2L-GE3
SQD100N03-3M2L_GE3
SQD100N03-3m4
SQD100N03-3M4-GE3
SQD100N03-3M4_GE3
NEW ORDERING CODE
SQD100N04-3m6
SQD100N04-3M6-GE3
SQD100N04-3M6_GE3
SQD100N04-3m6L
SQD100N04-3M6L-GE3
SQD100N04-3M6L_GE3
SQD10N30-330H
SQD10N30-330H-GE3
SQD10N30-330H_GE3
SQD15N06-42L
SQD15N06-42L-GE3
SQD15N06-42L_GE3
SQD19P06-60L
SQD19P06-60L-GE3
SQD19P06-60L_GE3
SQD23N06-31L
SQD23N06-31L-GE3
SQD23N06-31L_GE3
SQD25N06-22L
SQD25N06-22L-GE3
SQD25N06-22L_GE3
SQD25N15-52
SQD25N15-52-GE3
SQD25N15-52_GE3
SQD30N05-20L
SQD30N05-20L-GE3
SQD30N05-20L_GE3
SQD40N06-14L
SQD40N06-14L-GE3
SQD40N06-14L_GE3
SQD40N10-25
SQD40N10-25-GE3
SQD40N10-25_GE3
SQD40P10-40L
SQD40P10-40L-GE3
SQD40P10-40L_GE3
SQD45P03-12
SQD45P03-12-GE3
SQD45P03-12_GE3
SQD50N04-5m6
SQD50N04-5M6-GE3
SQD50N04-5M6_GE3
SQD50N04-5m6L
-
SQD50N04-5m6L_GE3
SQD50N05-11L
SQD50N05-11L-GE3
SQD50N05-11L_GE3
SQD50N06-09L
SQD50N06-09L-GE3
SQD50N06-09L_GE3
SQD50N10-8m9L
SQD50N10-8M9L-GE3
SQD50N10-8M9L_GE3
SQD50P03-07
SQD50P03-07-GE3
SQD50P03-07_GE3
SQD50P04-13L
SQD50P04-13L-GE3
SQD50P04-13L_GE3
SQD50P04-09L
SQD50P04-09L-GE3
SQD50P04-09L_GE3
SQD50P06-15L
SQD50P06-15L-GE3
SQD50P06-15L_GE3
SQD50P08-25L
SQD50P08-25L-GE3
SQD50P08-25L_GE3
SQD50P08-28
SQD50P08-28-GE3
SQD50P08-28_GE3
SQD90P04-9m4L
SQD90P04-9M4L-GE3
SQD90P04-9M4L_GE3
SQD97N06-6m3L
SQD97N06-6M3L-GE3
SQD97N06-6M3L_GE3
SQR40N10-25
SQR40N10-25-GE3
SQR40N10-25_GE3
SQR50N04-3m8
SQR50N04-3M8-GE3
SQR50N04-3M8_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 11-Nov-15
Document Number: 66957
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-252AA Case Outline
E
MILLIMETERS
A
C2
e
b2
D1
e1
E1
L
gage plane height (0.5 mm)
L4
b
L5
H
D
L3
b3
C
A1
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
0.024
C
0.46
0.61
0.018
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
4.10
-
0.161
-
E
6.35
6.73
0.250
0.265
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
e1
0.090 BSC
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.01
1.52
0.040
0.060
ECN: T13-0592-Rev. A, 02-Sep-13
DWG: 6019
Note
• Dimension L3 is for reference only.
Revision: 02-Sep-13
Document Number: 64424
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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APPLICATION NOTE
Document Number: 72594
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000