Trigger Devices MA2B001 Silicon planar type trigger device Unit : mm Thyristor TRIAC trigger circuit 24 min. ■ Features 4.5 max. • Satisfactory symmetry of VBO • Large VO and small IBO ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Average total power dissipation P(AV) 150 mW IPM 2.0 A Topr 100 °C Tstg −55 to +125 °C Operating ambient temperature*2 Storage temperature 24 min. φ 1.95 max. Parameter Peak current*1 Color indication (Green) φ 0.56 max. Note) *1 : Ta < 50°C, t = 10 µs, repetitive frequency 60 Hz *2 : Maximum ambient temperature during operation DO-35 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Breakover current IBO V = VBO Breakover voltage*1 VBO I = IBO Output voltage*1 Breakover voltage deviation*2 Typ 28 VO Temperature coefficient of breakover voltage Min 4.0 T.C.(VBO) ∆VBO Max Unit 50 µA 36 V 7.0 V 0.1 %/°C 3.5 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Measurement of VBO and VO V *2 : Symmetry of VBO VBO 30 kΩ 70 kΩ VO VBO' Amp. VBO 100 Vrms 0.068 µF 20 Ω 1 MA2B001 Trigger Devices VBO Ta 16 1 000 14 30 25 20 15 10 8 6 4 600 400 200 0 200 400 600 800 2 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) VO RL 14 Ta = 25°C 12 Output voltage VO (V) 12 10 5 10 8 6 4 2 0 0.01 0.05 0.1 0.5 1 Load resistance RL (kΩ) 2 Breakover current IBO (µA) 35 Ta = 25°C 800 40 Output voltage VO (V) Breakover voltage VBO (V) 45 0 IBO VBO VO Ta 50 5 10 0 1 000 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 40 30 20 10 0 10 20 30 40 Breakover voltage VBO (V)