Data Sheet

BA891
Band-switching diode
Rev. 04 — 8 January 2008
Product data sheet
IMPORTANT NOTICE
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- NXP Semiconductors, which will be used in future data sheets together with new contact
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NXP Semiconductors
NXP Semiconductors
Product specification
Band-switching diode
BA891
FEATURES
PINNING
• Ultra small plastic SMD package
PIN
DESCRIPTION
• Low diode capacitance: max. 1.05 pF
1
cathode
• Low diode forward resistance: max. 0.7 Ω
2
anode
• Small inductance.
APPLICATIONS
• Low loss band-switching in VHF television tuners
• Surface mount band-switching circuits.
handbook, halfpage
DESCRIPTION
1
2
Top view
The BA891 is a planar high performance band-switching
diode in the ultra small SOD523 SMD plastic package.
MAM405
The marking band indicates the cathode.
MARKING
TYPE NUMBER
MARKING CODE
BA891
Fig.1 Simplified outline (SOD523) and symbol.
7
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
35
V
IF
continuous forward current
−
100
mA
Ptot
total power dissipation
−
715
mW
Tstg
storage temperature
Ts = 90 °C
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Rev. 04 - 8 January 2008
2 of 6
NXP Semiconductors
Product specification
Band-switching diode
BA891
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
VALUE
UNIT
85
K/W
thermal resistance from junction to soldering point
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 10 mA
−
1
V
IR
reverse current
VR = 30 V
−
20
nA
Cd
diode capacitance
f = 1 MHz; note 1; see Fig.2
VR = 1 V
0.8
1.05
pF
VR = 3 V
0.65
0.9
pF
IF = 3 mA
0.42
0.7
Ω
IF = 10 mA
0.28
0.5
Ω
0.6
−
nH
rD
diode forward resistance
LS
f = 100 MHz; note 1; see Fig.3
series inductance
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
MGL479
1
MGL478
10
handbook, halfpage
handbook, halfpage
Cd
(pF)
rD
(Ω)
0.8
0.6
1
0.4
0.2
0
0
10
20
VR (V)
30
10−1
10−1
1
IF (mA)
10
f = 1 MHz; Tj = 25 °C.
f = 100 MHz; Tj = 25 °C.
Fig.2
Fig.3
Diode forward resistance as a function of
forward current; typical values.
Rev. 04 - 8 January 2008
3 of 6
Diode capacitance as a function of reverse
voltage; typical values.
NXP Semiconductors
Product specification
Band-switching diode
BA891
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD523
A
c
v M A
HE
A
D
1
E
0
0.5
1 mm
scale
2
DIMENSIONS (mm are the original dimensions)
bp
(1)
UNIT
A
bp
c
D
E
HE
v
mm
0.65
0.58
0.34
0.26
0.17
0.11
1.25
1.15
0.85
0.75
1.65
1.55
0.1
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
JEITA
SC-79
Rev. 04 - 8 January 2008
EUROPEAN
PROJECTION
ISSUE DATE
02-12-13
06-03-16
4 of 6
BA891
NXP Semiconductors
Band-switching diode
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
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information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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to the publication hereof.
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authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
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Notice: All referenced brands, product names, service names and trademarks
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Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 04 - 8 January 2008
5 of 6
BA891
NXP Semiconductors
Band-switching diode
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BA891_N_4
20080108
Product data sheet
-
BA891_3
Modifications:
•
Package outline on page 4 changed
BA891_3
(9397 750 09281)
20020125
Product specification
-
BA891_2
BA891_2
(9397 750 04308)
19980831
Product specification
-
BA891_1
BA891_1
(9397 750 04193)
19980818
Product specification
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 January 2008
Document identifier: BA891_N_4
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