SQ1431EH www.vishay.com Vishay Siliconix Automotive P-Channel 30 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET -30 RDS(on) () at VGS = -10 V 0.175 RDS(on) () at VGS = -4.5 V 0.300 ID (A) • AEC-Q101 qualified c • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 -3 Configuration Single Package SC-70 SOT-363 SC-70 Single (6 leads) D 6 D 5 S S 4 G 1 D Top View 2 D 3 G P-Channel MOSFET D Marking Code: 9E ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V -3 -1.8 IS -3.7 IDM -12 IAS -6 EAS 1.8 PD UNIT 3 1 A mJ W TJ, Tstg -55 to 175 °C SYMBOL LIMIT UNIT RthJA 130 RthJF 50 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b °C/W Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR4 material). c. Parametric verification ongoing. S15-2880 Rev. C, 14-Dec-15 Document Number: 67048 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1431EH www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = -250 μA -30 - - VGS(th) VDS = VGS, ID = -250 μA -1 -1.5 -2 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = -30 V - - -1 VGS = 0 V VDS = -30 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -30 V, TJ = 175 °C - - -150 VGS = -10 V VDS -5 V -5 - - VGS = -10 V ID = -2 A - 0.125 0.175 VGS = -10 V ID = -2 A, TJ = 125 °C - - 0.252 VGS = -10 V ID = -2 A, TJ = 175 °C - - 0.294 VGS = -4.5 V ID = -1.6 A - 0.230 0.300 - 3 - - 164 205 - 44 55 - 28 35 - 4.2 6.5 - 0.7 - VDS = -10 V, ID = -2 A V nA μA A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V VGS = -4.5 V VDS = -25 V, f = 1 MHz VDS = -15 V, ID = -2.2 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = -15 V, RL = 15 ID -1 A, VGEN = -10 V, Rg = 1 tf - 1 - 4.5 12.5 18.5 - 5 8 pF nC - 8 12 - 11 17 - 8 12 - - -12 A - -0.85 -1.2 V ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = -1.2 A, VGS = 0 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2880 Rev. C, 14-Dec-15 Document Number: 67048 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1431EH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 8 VGS = 10 V thru 6 V 8 VGS = 5 V ID - Drain Current (A) ID - Drain Current (A) 6 4 VGS = 4 V 6 TC = 25 °C 4 2 2 TC = 125 °C 0 1 2 3 0 4 0 5 6 8 Output Characteristics Transfer Characteristics 5 1.6 4 1.2 0.8 TC = 25 °C 0.4 TC = 125 °C 1 2 10 TC = - 55 °C TC = 25 °C 3 TC = 125 °C 2 1 TC = - 55 °C 0.0 3 4 0 0.0 5 0.4 0.8 1.2 1.6 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 1.0 2.0 300 250 C - Capacitance (pF) 0.8 RDS(on) - On-Resistance (Ω) 4 VGS - Gate-to-Source Voltage (V) 2.0 0 2 VDS - Drain-to-Source Voltage (V) gfs - Transconductance (S) ID - Drain Current (A) TC = - 55 °C VGS = 3 V 0 VGS = 4.5 V 0.6 0.4 Ciss 200 150 100 Coss VGS = 10 V 0.2 50 Crss 0 0 0 2 4 6 8 10 0 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance S15-2880 Rev. C, 14-Dec-15 25 30 Document Number: 67048 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1431EH www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 2.2 A VDS = 15 V 8 6 4 2 1 2 3 4 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 - 25 0 0 ID = 2 A 1.7 5 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 100 1.0 10 0.8 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 25 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.6 0.4 TJ = 150 °C 0.2 TJ = 25 °C 0.001 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage - 29 0.7 VDS - Drain-to-Source Voltage (V) - 30 0.5 ID = 250 μA VGS(th) Variance (V) 4 0.3 ID = 5 mA 0.1 - 0.1 - 0.3 - 50 - 25 0 25 50 75 100 125 150 175 ID = 1 mA - 31 - 32 - 33 - 34 - 35 - 36 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S15-2880 Rev. C, 14-Dec-15 Document Number: 67048 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1431EH www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 100 μs 1 ms 1 10 ms Limited by RDS(on)* 0.1 BVDSS Limited 100 ms 1 s, 10 s DC TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2880 Rev. C, 14-Dec-15 Document Number: 67048 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1431EH www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67048. S15-2880 Rev. C, 14-Dec-15 Document Number: 67048 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ1431EH www.vishay.com REVISION HISTORY REVISION C a DATE 03-Dec-15 Vishay Siliconix DESCRIPTION OF CHANGE • Changed Rg minimum Note a. As of April 2014 S15-2880 Rev. C, 14-Dec-15 Document Number: 67048 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix SC-70 Ordering codes for the SQ rugged series power MOSFETs in the SC-70 package: OLD ORDERING CODE a NEW ORDERING CODE SQ1421EDH - SQ1421EDH-T1_GE3 SQ1431EH SQ1431EH-T1-GE3 SQ1431EH-T1_GE3 SQ1440EH - SQ1440EH-T1_GE3 SQ1470AEH - SQ1470AEH-T1_GE3 SQ1539EH - SQ1539EH-T1_GE3 SQ1563AEH - SQ1563AEH-T1_GE3 DATASHEET PART NUMBER SQ1902AEL - SQ1902AEL-T1_GE3 SQ1912AEEH - SQ1912AEEH-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 11-Nov-15 Document Number: 65839 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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