Phototransistors PNZ106 (PN106) Silicon NPN Phototransistor Unit : mm ø4.6±0.15 Glass lens 6.3±0.3 For optical control systems Features High sensitivity 12.7 min. Fast response : tr = 3.5 µs (typ.) Narrow directional sensitivity for effective use of light input 3-ø0.45±0.05 Signal mixing capability using base pin 2.54±0.25 0± 1. Parameter 1. 3˚ 0± 0. 45± 15 2 0. Absolute Maximum Ratings (Ta = 25˚C) Symbol Ratings Unit Collector to emitter voltage VCEO 30 V Collector to base voltage VCBO 40 V Emitter to collector voltage VECO 5 V Emitter to base voltage VEBO 5 V 3 2 1 1: Emitter 2: Base 2: Collector ø5.75 max. Collector current IC 20 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current Peak sensitivity wavelength Acceptance half angle *2 min Unit 100 nA 0.6 mA 800 nm θ Measured from the optical axis to the half power point 10 deg. 3.5 µs Fall time tf*2 VCE(sat) 0.3 max 1 VCE = 10V tr*2 VCE = 10V, L = 100 lx*1 typ λP Rise time Collector saturation voltage *1 ICE(L) Conditions VCE = 10V VCC = 10V, ICE(L) = 1mA, RL = 100Ω ICE(L) = 1 mA, L = 1000 lx*1 µs 5.0 0.2 0.4 V Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ;;;; ;; 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNZ106 PC — Ta ICE(L) — VCE 120 ICE(L) — L 10 2 8 VCE = 10V Ta = 25˚C T = 2856K 60 40 20 20 40 60 Ambient temperature 80 L = 1000 lx 4 500 lx 2 300 lx 100 lx 0 100 700 lx Ta (˚C ) 0 4 8 12 Collector to emitter voltage ICEO — Ta 10 1 10 –1 40 Ambient temperature 60 80 50 S (%) 40 80 60 40 0 200 120 30˚ 40˚ 40 50˚ 30 60˚ 70˚ 400 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) 10 3 tf — ICE(L) 10 3 VCC = 10V Ta = 25˚C VCC = 10V Ta = 25˚C 10 2 10 2 tr (µs) 60 80 tr — ICE(L) 20˚ Rise time 70 Relative sensitivity S(%) 90 0 Ambient temperature 100 80 VCE = 10V Ta = 25˚C 20 Ta (˚C ) 10˚ 10 3 L (lx) Spectral sensitivity characteristics 10 –1 Directivity characteristics 0˚ 10 2 10 Illuminance 100 1 10 –2 – 40 100 1 VCE (V) Relative sensitivity ICE(L) (mA) 10 Collector photo current Dark current ICEO (nA) 10 2 20 10 –1 10 –2 VCE = 10V T = 100 lx VCE = 10V 0 1 ICE(L) — Ta 10 3 10 –2 – 20 50 lx 20 24 16 10 tf (µs) 0 6 RL = 1kΩ 10 Fall time 0 – 20 ICE(L) (mA) 80 Collector photo current ICE(L) (mA) 100 Collector photo current Collector power dissipation PC (mW) Ta = 25˚C 500Ω 100Ω RL = 1kΩ 500Ω 10 100Ω 1 1 80˚ 90˚ 10 –1 10 –1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 –1 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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