Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D154
BAT254
Schottky barrier diode
Product data sheet
Supersedes data of 1999 Apr 22
2002 May 28
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT254
FEATURES
DESCRIPTION
• Low forward voltage
Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic
SMD package.
• Guard ring protected
• Very small ceramic SMD package.
cathode mark
handbook, 4 columns
APPLICATIONS
a
k
k
a
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
bottom view
side view
top view
MAM214
Marking code: L4.
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
30
V
IF
continuous forward current
−
200
mA
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
−
300
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
−
600
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C
Tamb
operating ambient temperature
−65
+125
°C
2002 May 28
2
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT254
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
see Fig.2
IF = 0.1 mA
240
mV
IF = 1 mA
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
IF = 100 mA
800
mV
IR
reverse current
VR = 25 V; note 1; see Fig.3
2
μA
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.5
5
ns
Cd
diode capacitance
f = 1 MHz; VR = 1 V; see Fig.4
10
pF
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
note 1
Note
1. Refer to SOD110 standard mounting conditions.
2002 May 28
3
VALUE
UNIT
315
K/W
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT254
GRAPHICAL DATA
MSA892
IF
(mA)
MSA893
10 3
3
10halfpage
handbook,
I
R
(μA)
(1) (2) (3)
10 2
(1)
10 2
(2)
10
10
(1)
1
10 1
(2)
(3)
1
(3)
10 1
0
0.4
0.8
VF (V)
1.2
0
10
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
20
30
VR (V)
Reverse current as a function of reverse
voltage; typical values.
MSA891
15
handbook, halfpage
Cd
(pF)
handbook,
halfpage
I
F
dI F
10
dt
10% t
5
Qr
90%
IR
0
0
10
20
VR (V)
tf
MRC129 - 1
30
f = 1 MHz; Tamb = 25 °C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2002 May 28
Fig.5 Reverse recovery definitions.
4
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT254
PACKAGE OUTLINE
Very small ceramic rectangular surface mounted package
D
SOD110
E
A
y
cathode
identifier
DIMENSIONS (mm are the original dimensions)
1
2
0
0.5
1 mm
UNIT
A
max.
D
E
y
mm
1.6
2.10
1.90
1.40
1.10
0.1
scale
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-04-14
SOD110
2002 May 28
EUROPEAN
PROJECTION
5
NXP Semiconductors
Product data sheet
Schottky barrier diode
BAT254
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 May 28
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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© NXP B.V. 2009
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp7
Date of release: 2002 May 28
Document order number: 9397 750 09733
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