Reflective Photosensors (Photo Reflectors) CNB1009 (ON2173) Reflective Photosensor Overview Unit : mm (1.0) 7.4±0.2 1.0 1.0 19.0±0.3 2-9.5±0.2 Applications Detection of paper, film and cloth Optical mark reading (15.5) (2.54) 2.5 min. Small size, light weight 2 3 Detection of position and edge 1 Start, end mark detection of magnetic tape Parameter 1 2 3 4 (Note) ( ) Dimension is reference Symbol Ratings Reverse voltage (DC) Input (Light Forward current (DC) emitting diode) Power dissipation 4 Pin connection Absolute Maximum Ratings (Ta = 25˚C) Unit VR 3 V IF 50 mA PD*1 75 mW Collector to emitter voltage VCEO 20 V Output (Photo Emitter to collector voltage transistor) Collector current VECO 5 V IC 30 mA Collector power dissipation PC*2 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C Temperature ø2.2 ; ;; Fast response : tr, tf = 6 µs (typ.) Detection of coin and bill 1.0 9.5±0.3 Features 2-ø2.3 T.R 6.5±0.3 4.0±0.2 12.0±0.3 (4.0) LED CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. *1 Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C. *2 Output power derating ratio is 1.34 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Symbol Forward voltage (DC) Input Reverse current (DC) characteristics Capacitance between pins Output characteristics Collector cutoff current Conditions VF IF = 50mA IR VR = 3V Ct VR = 0V, f = 1MHz ICEO VCE = 10V Collector to emitter capacitance CC VCE = 10V, f= 1MHz Collector current IC*1 VCC = 10V, IF = 20mA, RL = 100Ω Transfer characteristics Response time tr*2 , tf*3 VCC = 10V, IC = 1mA, RL = 100Ω min typ max 1.2 1.5 V 10 µA 0.2 µA 50 100 pF 5 pF 500 µA µs 6 Collector to emitter saturation voltage VCE(sat) IF = 50mA, IC = 0.1mA *1 *2 Transfer characteristics measurement circuit (Ambient light is shut off completely) VCC ;; RL *3 ;;; ; IC ;; ;; ; ;; ; IF d = 5 mm Unit 0.3 V Time required for the collector current to increase from 10% to 90% of its final value. Time required for the collector 90% 10% current to decrease from 90% to 10% of its initial value. tr tf Standard white paper (Reflective ratio 90%) Note) The part number in the parenthesis shows conventional part number. 1 Reflective Photosensors (Photo Reflectors) IF , IC — Ta IF — V F VF — Ta 1.6 60 Ta = 25˚C IF IC 30 20 30 20 20 40 60 80 0 100 0 IC — I F 0.4 0.8 1.2 1.6 0 – 40 – 20 2.4 10 –1 IC (%) 10 IF = 30mA 20mA 1 10mA 10 –1 10 –2 10 –1 10 2 10 Forward current IF (mA) 1 VCE = 10V tr (µs) 40 60 80 Ambient temperature Ta (˚C ) 100 RL = 1kΩ 500Ω 10 100Ω 10 –1 10 –2 10 –1 20 40 60 80 100 800 1 Collector current IC (mA) VCC = 10V Ta = 25˚C RL = 100Ω IF = 20mA Collector current Rise time 20 0 Ambient temperature Ta (˚C ) VCC = 10V Ta = 25˚C 1 0 40 IC — d 10 2 1 10 –3 – 40 – 20 100 80 tr — IC 10 –2 80 120 0 – 40 – 20 10 2 10 10 3 –1 60 VCC = 10V IF = 20mA RL = 100Ω Collector to emitter voltage VCE (V) ICEO — Ta 10 40 IC — Ta IC (µA) 1 20 160 Relative output current IC (mA) 1 10 –2 10 –1 0 Ambient temperature Ta (˚C ) Ta = 25˚C Collector current IC (mA) Collector current 0.4 IC — VCE 10 ICEO (µA) 2.0 10 2 VCC = 5V Ta = 25˚C RL = 100Ω Dark current 1mA 0.8 Forward voltage VF (V) 10 2 2 10mA 10 600 ; ; 0 Ambient temperature Ta (˚C ) 10 IF = 50mA 1.2 10 10 0 – 25 40 Forward voltage 40 VF (V) 50 IF (mA) 50 Forward current IF , IC (mA) 60 Forward current, collector current CNB1009 d 400 200 0 0 4 8 12 Distance d (mm) 16 Caution for Safety Gallium arsenide material (GaAs) is used in this product. DANGER Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products. Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. 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