Si8808DB Datasheet

Si8808DB
www.vishay.com
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω) MAX.
ID (A) a
0.095 at VGS = 4.5 V
2.5
VDS (V)
30
• TrenchFET® power MOSFET
Qg (TYP.)
• Small 0.8 mm x 0.8 mm outline area
• Low 0.4 mm max. profile
0.105 at VGS = 2.5 V
2.3
0.120 at VGS = 1.8 V
2.2
0.165 at VGS = 1.5 V
1.9
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
2
APPLICATIONS
MICRO FOOT® 0.8 x 0.8
S
3
xxx
xx
3.7 nC
D
• Load switch
• High speed switching
8
0.
m
m
1
• 30 V max. rating and low on-resistance
mm
0.8
Backside View
• DC/DC converters
1
G
• For smart phones, tablet PCs, and
mobile computing
4
D
Bump Side View
G
S
N-Channel MOSFET
Marking Code: xx = AI
xxx = Date/Lot traceability code
Ordering Information:
Si8808DB-T2-E1 (lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±8
TA = 70 °C
2a
ID
TA = 25 °C
1.8 b
1.4 b
TA = 70 °C
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
IDM
TA = 25 °C
10
IS
TA = 25 °C
0.4 b
0.9 a
TA = 70 °C
0.6 a
PD
TA = 25 °C
W
0.5 b
0.3 b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
0.7 a
TA = 25 °C
Maximum Power Dissipation
V
2.5 a
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)
UNIT
TJ, Tstg
-55 to +150
Soldering Recommendations (Peak Temperature) c
°C
260
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a,d
Maximum Junction-to-Ambient b,e
SYMBOL
t≤5s
RthJA
TYPICAL
MAXIMUM
105
135
200
260
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
S15-0346-Rev. B, 23-Feb-15
Document Number: 62547
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8808DB
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
30
-
-
-
V
31
-
-
-2.3
-
0.4
-
0.9
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 μA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
IGSS
VDS = 0 V, VGS = ± 8 V
-
-
± 100
VDS = 30 V, VGS = 0 V
-
-
1
VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
-
10
VDS ≥ 5 V, VGS = 4.5 V
5
-
-
VGS = 4.5 V, ID = 1 A
-
0.071
0.095
VGS = 2.5 V, ID = 1 A
-
0.079
0.105
VGS = 1.8 V, ID = 1 A
-
0.090
0.120
VGS = 1.5 V, ID = 0.5 A
-
0.105
0.165
VDS = 15 V, ID = 1 A
-
10
-
-
330
-
VDS = 15 V, VGS = 0 V, f = 1 MHz
-
40
-
-
16
-
-
6.5
10
-
3.7
5.6
-
0.53
-
-
0.52
-
-
3.1
-
-
5
10
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward Transconductance
a
RDS(on)
gfs
mV/°C
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDS = 15 V, VGS = 8 V, ID = 1 A
VDS = 15 V, VGS = 4.5 V, ID = 1 A
f = 1 MHz
td(on)
tr
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 8 V, Rg = 1 Ω
-
12
25
-
15
30
tf
-
6
15
td(on)
-
7
15
-
15
30
-
22
40
-
10
20
td(off)
tr
td(off)
VDD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TA = 25 °C
IS = 1 A, VGS = 0 V
IF = 1 A, dI/dt = 100 A/μs, TJ = 25 °C
-
-
0.7
-
-
10
-
0.7
1.2
V
-
11
20
ns
-
5
10
nC
-
7
-
-
4
-
A
ns
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-0346-Rev. B, 23-Feb-15
Document Number: 62547
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8808DB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
15
VGS = 5 V thru 2.5 V
VGS = 2 V
8
ID - Drain Current (A)
ID - Drain Current (A)
12
9
VGS = 1.5 V
6
3
6
4
TC = 25 °C
TC = 125 °C
2
TC = - 55 °C
VGS = 1 V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
3.0
0.0
0.4
0.8
1.2
1.6
VGS - Gate-to-Source Voltage (V)
Output Characteristics
2.0
Transfer Characteristics
500
0.20
V GS = 1.5 V
400
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.16
V GS = 1.8 V
0.12
0.08
VGS = 4.5 V
VGS = 2.5 V
0.04
Ciss
300
200
100
Coss
Crss
0.00
0
0
2
4
6
ID - Drain Current (A)
8
10
0
5
On-Resistance vs. Drain Current
30
Capacitance
8
1.6
VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1 A
RDS(on) - On-Resistance (Normalized)
ID = 1 A
VGS - Gate-to-Source Voltage (V)
10
15
20
25
VDS - Drain-to-Source Voltage (V)
VDS = 15 V
6
VDS = 7.5 V
4
VDS = 24 V
2
0
0
1.4
VGS = 1.5 V, ID = 0.5 A
1.2
1.0
0.8
0.6
- 50
Qg - Total Gate Charge (nC)
0
25
50
75
100
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
2
4
S15-0346-Rev. B, 23-Feb-15
6
8
- 25
125
150
Document Number: 62547
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8808DB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.30
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.25
10
TJ = 150 °C
1
TJ = 25 °C
ID = 1 A
0.20
0.15
TJ = 125 °C
0.10
TJ = 25 °C
0.05
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
14
0.8
12
0.7
Power (W)
VGS(th) (V)
10
0.6
ID = 250 μA
0.5
8
6
4
0.4
2
0.3
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
0
0.001
150
Threshold Voltage
0.01
0.1
1
Time (s)
10
100
1000
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1
1 ms
0.1
10 ms
TA = 25 °C
BVDSS Limited
0.01
0.1
10 s, 1 s, 100 ms
DC
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-0346-Rev. B, 23-Feb-15
Document Number: 62547
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8808DB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.8
2.5
Power Dissipation (W)
ID - Drain Current (A)
2.0
1.5
1.0
0.6
0.4
0.2
0.5
0.0
0.0
0
25
50
75
100
125
TA - Ambient Temperature (°C)
Current Derating*
150
25
50
75
100
125
150
T A - Ambient Temperature (°C)
Power Derating
Note
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0346-Rev. B, 23-Feb-15
Document Number: 62547
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8808DB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 185 °C/W
3. T JM - T A = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Maximum Copper)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 330 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 Board with Minimum Copper)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62547.
S15-0346-Rev. B, 23-Feb-15
Document Number: 62547
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MICRO FOOT®: 4-Bump (0.8 mm x 0.8 mm, 0.4 mm Pitch)
D
S
e
S
e
XXX
S
D
S
S
4x Ø b
G
D
S
AK
Mark on Backside of die
A2
4-Ø 0.205 to 0.225 Note 5
Solder Mask ~Ø 0.215
A1
A
e
b
k
b1
e
Bump Note 2
Note 4
Notes
(1) Laser mark on the backside surface of die
(2) Bumps are 95.5 % Sn,3.8 % Ag,0.7 % Cu
(3) “i” is the location of pin 1
(4) “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
(5) Non-solder mask defined copper landing pad.
DIM.
MILLIMETERS a
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.328
0.365
0.402
0.0129
0.0144
0.0158
A1
0.136
0.160
0.184
0.0053
0.0062
0.0072
A2
0.192
0.205
0.218
0.0076
0.0081
0.0086
b
0.200
0.220
0.240
0.0078
0.0086
0.0094
b1
0.175
0.0068
e
0.400
0.0157
S
0.160
0.180
0.200
0.0062
0.0070
0.0078
D
0.720
0.760
0.800
0.0283
0.0299
0.0314
K
0.040
0.070
0.100
0.0015
0.0027
0.0039
Note
a. Use millimeters as the primary measurement.
ECN: T15-0053-Rev. A, 16-Feb-15
DWG: 6033
Revision: 16-Feb-15
1
Document Number: 69442
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000