Small Signal Transistor Arrays UN225 Transistor array to drive the small motor ■ Features ● ● ● ● Unit: mm Small and lightweight Low power consumption (low VCE(sat) transistor used) Low-voltage drive With 8 elements incorporated (SO–16) 1.5±0.1 7.7±0.3 5.5±0.3 0.8 16 6.5±0.3 12˚ 6˚ 12˚ 0 to 0.1 ● 9 14-0.75±0.1 ● 8 45˚ +0.1 ● Video cameras Cameras Portable CD players Small motor drive circuits in general for electronic equipment. 0.5 ● 0.2–0.05 ■ Applications 16-0.3±0.1 1 0.5±0.2 ■ 6˚ Absolute Maximum Ratings (Ta=25±2˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO ±10 V Collector to emitter voltage VCEO ±10 V Emitter to base voltage VEBO ±7 V IC ±0.5 A PT* 0.5 W Collector current Total power dissipation Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Note: ± marks used above: +: NPN part, –: PNP part * TC = 25˚C only when the elements are active SO–16 Package Internal Connection 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 1 Small Signal Transistor Arrays ■ Electrical Characteristics UN225 (Ta=25±2˚C) Parameter Symbol Collector cutoff current ICBO Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat)1 Transition frequency fT Collector output capacitance Cob Forward voltage (DC) VF Conditions min typ max (NPN) VCB = 7V 1 (PNP) VCB = –7V –1 (NPN) IC = 10µA 10 (PNP) IC = –10µA –10 (NPN) IC = 1mA 10 (PNP) IC = –1mA –10 (NPN) IE = 10µA 7 (PNP) IE = –10µA –7 Unit µA V V V (NPN) VCE = 2V, IC = 0.2A* 200 800 (PNP) VCE = –2V, IC = – 0.2A* 200 800 (NPN) IC = 0.2A, IB = 2mA 0.2 (PNP) IC = – 0.2A, IB = –2mA – 0.2 (NPN) VCB = 6V, IE = –50mA, f = 200MHz 120 (PNP) VCB = –6V, IE = 50mA, f = 200MHz 120 (NPN) VCB = 6V, IE = 0, f = 1MHz 25 (PNP) VCB = –6V, IE = 0, f = 1MHz 35 V MHz pF (NPN) IF = 0.5A 1.3 (PNP) IF = – 0.5A –1.3 V *Pulse measurement Characteristics charts of PNP transistor block PT — Ta IC — VCE IC — VBE –1.2 0.6 –1.2 0.4 0.3 0.2 –4mA –3mA –0.8 –2mA –0.6 –0.4 –1mA –0.2 0.1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 25˚C –1.0 Ta=75˚C –25˚C –0.8 –0.6 –0.4 –0.2 0 0 2 IB=–6mA VCE=–2V Collector current IC (A) –1.0 0.5 Collector current IC (A) Total power dissipation PT (W) Ta=25˚C –5mA 0 0 –2 –4 –6 –8 –10 Collector to emitter voltage VCE (V) –12 0 –0.4 –0.8 –1.2 –1.6 –2.0 –2.4 Base to emitter voltage VBE (V) Small Signal Transistor Arrays UN225 VCE(sat) — IC hFE — IC VCE=–2V –3 –1 Ta=75˚C 25˚C –25˚C –0.1 –0.03 –0.01 –0.003 –0.001 –0.01 –0.03 –0.1 –0.3 –1 –3 500 400 Ta=75˚C 25˚C 300 –25˚C 200 100 0 –0.01 –0.03 –0.1 –0.3 –10 Collector current IC (A) –1 –3 Collector output capacitance Cob (pF) IC/IB=100 –0.3 Cob — VCB 120 600 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –10 f=1MHz IE=0 Ta=25˚C 100 80 60 40 20 0 –1 –10 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector current IC (A) Characteristics charts of NPN transistor block PT — Ta IC — VCE IC — VBE 1.2 0.6 1.2 0.4 0.3 0.2 2.0mA 0.8 1.5mA 0.6 1.0mA 0.4 0.5mA 40 60 2 VCE(sat) — IC 10 Forward current transfer ratio hFE Ta=75˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 6 8 10 12 0 0.4 0.8 3 Collector current IC (A) 10 500 25˚C 300 –25˚C 200 100 0 0.01 0.03 0.1 0.3 1.6 2.0 2.4 Cob — VCB Ta=75˚C 400 1.2 Base to emitter voltage VBE (V) VCE=2V 1 0.1 0.4 hFE — IC 3 25˚C 4 600 IC/IB=100 0.3 0.6 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) –25˚C 0 0 80 100 120 140 160 1 3 Collector current IC (A) 10 60 Collector output capacitance Cob (pF) 20 Ta=75˚C 0.8 0.2 0 0 25˚C 1.0 2.5mA 0.2 0.1 0 Collector to emitter saturation voltage VCE(sat) (V) VCE=2V Collector current IC (A) IB=3.0mA 1.0 0.5 Collector current IC (A) Total power dissipation PT (W) Ta=25˚C f=1MHz IE=0 Ta=25˚C 50 40 30 20 10 0 1 3 10 30 100 Collector to base voltage VCB (V) 3