Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 3.0±0.2 4.0±0.2 ■ Features marking ■ Absolute Maximum Ratings (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 15 V Peak collector current ICP 1.5 A Collector current IC 0.7 A Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter Collector cutoff current 2 3 2.0±0.2 15.6±0.5 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7±0.1 ● +0.2 0.45–0.1 ● 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Symbol Conditions ICBO VCB = 15V, IE = 0 min typ max Unit 1 µA 10 µA ICEO VCE = 15V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 20 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V 150mA* Forward current transfer ratio hFE VCE = 10V, IC = Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA* 1000 Transition frequency fT VCB = 20V, IE = –20mA, f = 200MHz 55 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 10 2500 0.15 0.4 V MHz 15 * pF Pulse measurement 1 2SD2460 Transistor IC — VCE 200 400 Collector current IC (mA) Collector power dissipation PC (mW) Ta=25˚C 300 200 100 IB=100µA 90µA 160 80µA 70µA 120 60µA 50µA 80 40µA 30µA 40 20µA 10µA 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 2100 Ta=75˚C 25˚C 1500 –25˚C 1200 900 600 300 0 Collector output capacitance Cob (pF) 24 VCE=10V 1800 8 10 12 Cob — VCB 2400 Forward current transfer ratio hFE 6 Collector to emitter voltage VCE (V) hFE — IC f=1MHz IE=0 Ta=25˚C 20 16 12 8 4 0 1 3 10 30 100 300 Collector current IC (mA) 2 VCE(sat) — IC 240 1000 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 500 10 IC/IB=10 3 1 0.3 0.1 Ta=75˚C 0.03 25˚C –25˚C 0.01 0.003 0.001 1 3 10 30 100 300 Collector current IC (mA) 1000