Si7655ADN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0036 at VGS = - 10 V - 40e 0.0048 at VGS = - 4.5 V - 40e 0.0090 at VGS = - 2.5 V - 40e Qg (Typ.) 72 nC PowerPAK 1212-8S APPLICATIONS 3.3 mm S 1 3.3 mm S 2 S 3 • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 0.75 mm Profile • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 0.75 mm G • Smart Phones, Tablet PCs, Mobile Computing - Battery Switch - Load Switch S 4 G D 8 D 7 D 6 D 5 Bottom View D Ordering Information: Si7655ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 TC = 70 °C TA = 25 °C ID IDM TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C Avalanche Current L = 0.1 mH Single-Pulse Avalanche Energy IS TC = 70 °C TA = 25 °C - 100 A - 40e - 4a, b IAS - 20 20 mJ 57 PD 36 4.8a, b W 3a, b TA = 70 °C Operating Junction and Storage Temperature Range - 31a, b EAS TC = 25 °C Maximum Power Dissipation - 40e - 25a, b TA = 70 °C Pulsed Drain Current (t = 300 µs) V - 40e TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg c, d Soldering Recommendations (Peak Temperature) - 50 to 150 260 °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7655ADN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) Symbol RthJA RthJC t 10 s Steady State Typical 21 1.7 Maximum 26 2.2 Unit °C/W Notes: a.Surface mounted on 1" x 1" FR4 board. b.Maximum under steady state conditions is 63 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Symbol Test Conditions Min. VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = - 250 µA - 20 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Ciss Coss Crss Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A IS TC = 25 °C ISM VSD trr Qrr ta tb f = 1 MHz VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 4.5 V, Rg = 1 VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 10 V, Rg = 1 IF = - 10 A IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C mV/ °C - 1.1 ± 100 -1 - 10 - 20 0.5 V nA µA A 0.0030 0.0039 0.0062 90 VDS = - 10 V, VGS = - 10 V, ID = - 20 A Unit V - 0.5 VDS = - 10 V, VGS = 0 V, f = 1 MHz Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf Max. - 12 2.6 ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 °C VDS - 5 V, VGS = - 10 V VGS = - 10 V, ID = - 20 A VGS = - 4.5 V, ID = - 15 A VGS = - 2.5 V, ID = - 10 A VDS = - 15 V, ID = - 20 A Typ. 6600 890 930 150 72 12 19 2.6 45 45 100 35 13 10 110 25 - 0.75 30 17 15 15 0.0036 0.0048 0.0090 S pF 225 110 5.2 90 90 200 70 25 20 220 50 - 40c - 100 - 1.2 60 26 nC ns A V ns nC ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7655ADN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 20 VGS = 10 V thru 3 V 16 ID - Drain Current (A) ID - Drain Current (A) 80 60 VGS = 2 V 40 20 12 TC = 25 °C 8 TC = 125 °C 4 TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) 0.0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 9000 0.020 7500 0.016 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2.5 VGS = 2.5 V 0.012 0.008 6000 4500 3000 VGS = 4.5 V Coss 0.004 1500 Crss VGS = 10 V 0.000 0 0 20 40 60 80 100 ID - Drain Current (A) 0 8 12 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 20 1.4 10 RDS(on) - On-Resistance (Normalized) VDS = 10 V 8 6 VDS = 5 V VDS = 16 V 4 2 0 0 30 VGS = 10 V ID = 20 A ID = 20 A VGS - Gate-to-Source Voltage (V) 4 60 90 120 150 1.3 VGS = 4.5 V 1.2 VGS = 2.5 V 1.1 1.0 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 For technical questions, contact: [email protected] 150 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7655ADN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.020 ID = 20 A 0.016 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TJ = 150 °C 10 TJ = 25 °C 1 0.012 0.008 TJ = 125 °C 0.004 TJ = 25 °C 0.1 0.000 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 100 0.9 0.8 80 Power (W) VGS(th) (V) 0.7 0.6 ID = 250 μA 60 40 0.5 20 0.4 0.3 - 50 - 25 0 25 50 75 100 125 0 0.001 150 TJ - Temperature (°C) 0.01 0.1 1 Time (s) 10 100 Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 1000 Limited by RDS(on)* ID - Drain Current (A) 100 100 us 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 TA = 25 °C DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7655ADN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 120 60 50 80 Power (W) ID - Drain Current (A) 100 60 Package Limited 40 30 40 20 20 10 0 0 0 25 TC - Case Temperature (°C) 50 75 100 TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case 50 75 100 125 0 150 25 125 150 * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 63 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.0001 0.001 4. Surface Mounted 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si7655ADN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 0.0001 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62909. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 62909 S13-2075-Rev. A, 30-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-8S D z 8 7 6 5 1 2 3 4 D1 5 6 7 8 2 1 L K E E1 K1 d 0.10 C 2X d 0.10 C 2X 3 0.10 C C A3 A f e b 4 0.08 C A1 d DIM. MILLIMETERS MIN. NOM. A 0.67 A1 0 INCHES MAX. MIN. NOM. MAX. 0.75 0.83 0.027 0.030 0.033 - 0.05 0 - 0.002 A3 0.20 REF 0.008 REF b 0.30 BSC 0.012 BSC 3.30 BSC D D1 2.15 0.130 BSC 2.35 0.084 1.80 0.063 3.30 BSC E E1 2.25 1.60 1.70 0.088 0.092 0.130 BSC 0.067 0.071 e 0.65 BSC 0.026 BSC K 0.76 TYP 0.030 TYP K1 0.41 TYP 0.016 TYP L 0.43 BSC 0.017 BSC z 0.525 TYP 0.021 TYP ECN: C12-0200-Rev. A, 12-Mar-12 DWG: 6008 Note • Millimeters will govern. Revision: 12-Mar-12 1 Document Number: 63919 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000