PANASONIC 2SA0900

Power Transistors
2SA0900 (2SA900)
Silicon PNP epitaxial planar type
Unit: mm
8.0+0.5
–0.1
For low-frequency Power amplification
Complementary to 2SC1868
3.2±0.2
1.9±0.1
3.05±0.1
• Low collector-emitter saturation voltage VCE(sat)
• TO-126B package which requires no insulation plate for installation to the heat sink
11.0±0.5
■ Features
16.0±1.0
3.8±0.3
φ 3.16±0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−20
V
Collector-emitter voltage (Base open)
VCEO
−18
V
Emitter-base voltage (Collector open)
VEBO
−5
V
Collector current
IC
−1
A
Peak collector current
ICP
−2
A
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.75±0.1
0.5±0.1
4.6±0.2
1
2
0.5±0.1
1.76±0.1
2.3±0.2
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
Conditions
Min
−20
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = −1 mA, IB = 0
−18
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−5
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = −10 V, IE = 0
−1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = −18 V, IB = 0
−10
µA
280

V
VCE = −2 V, IC = −500 mA
130
hFE2
VCE = −2 V, IC = −1.5 A
50
Collector-emitter saturation voltage
VCE(sat)
IC = −1 A, IB = −50 mA
− 0.5
V
Base-emitter saturation voltage
VBE(sat)
IC = −500 mA, IB = −50 mA
−1.2
V
Forward current transfer ratio
hFE1
Transition frequency
*
fT
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = −6 V, IE = 50 mA, f = 200 MHz
200
MHz
VCB = −6 V, IE = 0, f = 1 MHz
40
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE1
130 to 210
180 to 280
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
SJD00004BED
1
2SA0900
TC = 25°C
IB = −5.0 mA
− 0.8
−4.5 mA
−4.0 mA
− 0.6
−3.5 mA
−3.0 mA
−2.5 mA
Collector current IC (A)
4
3
(1)
−2.0 mA
− 0.4
2
(2)
−1.5 mA
−1.0 mA
− 0.2
1
0
40
80
120
− 0.5 mA
0
160
−1
0
−3
−4
−5
−6
Collector-emitter voltage VCE (V)
VBE(sat)  IC
hFE  IC
IC / IB = 20
−10
−1
TC = 100°C
25°C
− 0.01
− 0.01
− 0.1
100°C
fT  I E
25°C
− 0.1
10
1
− 0.01
−1
Collector current IC (A)
500
VCB = −6 V
TC = 25°C
ICP
Collector current IC (A)
80
Single pulse
TC = 25°C
t = 10 ms
IC
t=1s
− 0.1
60
40
− 0.01
20
−10
−100
Collector-base voltage VCB (V)
− 0.001
− 0.1
−1
−10
−100
Collector-emitter voltage VCE (V)
SJD00004BED
300
200
100
100
Emitter current IE (mA)
Safe operation area
−1
400
0
10
−1
−10
IE = 0
f = 1 MHz
TC = 25°C
100
− 0.1
Collector current IC (A)
Cob  VCB
120
25°C
−25°C
100
−1
Collector current IC (A)
VCE = −2 V
TC = 100°C
−25°C
− 0.1
Transition frequency fT (MHz)
TC = −25°C
−1
0
−1
IC / IB = 20
−10
1 000
− 0.01
− 0.01
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
−2
Ambient temperature Ta (°C)
− 0.1
2
VCE(sat)  IC
−1.0
Forward current transfer ratio hFE
Collector power dissipation PC (W)
5
0
Base-emitter saturation voltage VBE(sat) (V)
IC  VCE
−1.2
(1) With a 100 × 100 × 2 mm
Al heat sink
(2) Without heat sink
Collector-emitter saturation voltage VCE(sat) (V)
PC  Ta
6
1 000
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2002 JUL