GaAs PA Module UN0231N RF Power Amplifier Module Unit : mm 12 10 11 1 6 2 5 3 4 ■ Features ■ Absolute Maximum Ratings Ta=25°C 7 Symbol Ratings Unit Power supply voltage 1 *1 VDD1 6 V *1 VDD2 6 V Circuit current 1 IDD1 200 mA Circuit current 2 IDD2 600 mA Gate voltage VGG −4 V PIN 9 dBm Power supply voltage 2 Max input power Allowable power dissipation *3 PD 2 W Case temperature *3 Tcase −30 to +90 °C Storage temperature Tstg −30 to +120 °C 8 9 (0.9) 4-0.7 1.5±0.2 Parameter 2-1.2 4.0 7.5±0.15 1 : PIN 2 : VDD1 3 : VDD2 4 : POUT 0.59 • High efficiency with super miniature, 0.08 cc package(7.5 × 7.5 × 1.7 mm) 4.0 φ 0.8 7.3 7.5±0.15 For the preamplifier of the transmitting section in a cellular phone Tolerance dimension without indication : ±0.3 5 : GND 6 : VGG 7 : GND 8 : GND PAM01 9 : GND 10 : GND 11 : GND 12 : GND Marking Symbol : KK Note) *1 : VGG=−3.5 V *2 : Tcase=25°C *3 : The reverse of the device is solderd to the plate ■ Electrical Characteristics VGG=−2.5 V, f=887 MHz to 925 MHz, Ta=25°C±3°C, Nominal : ZS=ZL=50 Ω Parameter Idle current Symbol Conditions Iidl VDD1=VDD2=3.5 V, PIN=No min typ max Unit 110 140 mA 4 mA 410 450 mA IGG VDD1=VDD2=3.5 V, POUT=26.5 dBm IDD1 VDD1=VDD2=3.5 V, POUT=26.5 dBm *2, 3 G1 VDD1=VDD2=3.5 V, POUT=26.5 dBm 2nd harmonics *1, 3 2fO VDD1=VDD2=3.5 V, POUT=26.5 dBm −30 dBc dBc Gate current *2, 3 Circuit current 1 *2, 3 Gain 1 25.0 27.5 dB 3fO VDD1=VDD2=3.5 V, POUT=26.5 dBm −30 Voltage standing wave ratio *1, 3 VSWR IN VDD1=VDD2=3.5 V, POUT=26.5 dBm 3 Adjacent channel leakage power suppression 1 *2, 3 ACPR1 VDD1=VDD2=3.5 V, POUT=26.5 dBm ±900 kHz Detuning, 30 kHz Bandwidth −45 dBc Adjacent channel leakage power suppression 2 *2, 3 ACPR2 VDD1=VDD2=3.5 V, POUT=26.5 dBm ±1980 kHz Detuning, 30 kHz Bandwidth −57 dBc 3rd harmonics *1, 3 Note) *1 : No modulation. *2 : Offset from QPSK signal. *3 : Measurement point of input and output power is made to the terminal of device. 1