Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm(typ.) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 0.75 0.35 0.15 0.2 1.5±0.2 3.2±0.15 2.0±0.2 1.5 Absolute Maximum Ratings (Ta = 25˚C) * Spherical lens ø0.55±0.05 0.6±0.1 0.5±0.1 2 Mini hollow mold resin package 3.0±0.15 , , , Fast response and high-speed modulation capability : tr, tf = 20 ns (typ.) 0.38 ,, , ,, High-power output, high-efficiency : PO = 5.5 mW (typ.) 5.0±0.3 6.0±0.3 3.4±0.2 3.0±0.2 4.0±0.15 1.0 0.6 Features Parameter Mark (Red) 0.6±0.1 Symbol Ratings Unit Power dissipation PD 190 mW Forward current (DC) IF 100 mA Pulse forward current IFP* 0.2 A Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg – 40 to +100 ˚C 0.1 max. 1.0 2.2±0.15 1: Anode 2: Cathode f = 10 kHz, Duty cycle = 25 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions IF = 100mA min typ 3 5.5 max Unit mW 880 nm Radiant power PO Peak emission wavelength λP IF = 100mA Spectral half band width ∆λ IF = 100mA 50 Forward voltage (DC) VF IF = 100mA 1.55 Reverse current (DC) IR VR = 3V Rise time tr IFP = 100mA 20 Fall time tf IFP = 100mA 20 ns Half-power angle θ The angle in which radiant intencity is 50% 20 deg. nm 1.9 V 10 µA ns Precautions for Use [Airtightness] This product is not structured to provide a complete air seal. Therefore it cannot be immersed in solutions for purposes such as boiling tests or ultrasonic cleaning. [Ability to withstand soldering heat] The package of this product contains thermoplastic resin which has a limited ability to withstand heat. Therefore this product cannot be put through automated soldering operations in which the ambient temperature exceeds the specified temperature. The recommended soldering conditions are as follows. · Temperature of soldering iron tip : 260˚C or less : 300˚C or less or · Soldering time : 5 seconds or less : 1 second or less · Soldering position : At least 2 mm away from lead base ] [Ability to withstand chemicals] If the transparent case requires cleaning, wipe it lightly using ethyl alcohol, methyl alcohol, or isopropyl alcohol. If you plan to use other solvents, carefully check to make sure there are no problems such as a misshapen case or a change in the condition of the case material. 1 LN189L Infrared Light Emitting Diodes IF — Ta IFP — VF IF — VF 120 1 160 tw = 10µs f = 100Hz Ta = 25˚C 140 60 40 120 100 Pulse forward current Forward current Allowable forward current 80 IFP (A) 100 IF (mA) IF (mA) Ta = 25˚C 80 60 40 10 –1 20 20 20 40 60 80 0 100 0 Ambient temperature Ta (˚C ) 0.5 (2) (3) 1 10 –1 1 VF (V) IF = 100mA 1.4 10mA 1.2 1mA 0.8 – 40 10 Forward current IF (A) λP — Ta 1000 0 40 120 Relative radiant intensity (%) 700 4 5 IF = 100mA 1 10 –1 – 40 0 40 80 Ambient temperature Ta (˚C ) Spectral characteristics Directivity characteristics 0˚ IF = 100mA 800 3 Ambient temperature Ta (˚C ) IF = 100mA Peak emission wavelength λP (nm) 80 100 900 2 ∆PO — Ta 1.0 10 –2 1 10 1.6 10 –1 10 –2 10 –3 0 Forward voltage VF (V) 1.8 Forward voltage Relative radiant power ∆PO (1) 10 10 –2 2.0 VF — Ta (1) tw = 10µs Duty = 0.1% (2) tw = 50µs Duty = 50% (3) DC Ta = 25˚C 10 2 1.5 Forward voltage VF (V) ∆PO — IF 10 3 1.0 80 90 80 70 60 60 50 40 40 30 20 20 10˚ 20˚ 100 Relative radiant intensity (%) 0 Relative radiant power ∆PO 0 – 25 30˚ 40˚ 50˚ 60˚ 70˚ 80˚ 90˚ 600 – 40 0 40 80 Ambient temperature Ta (˚C ) 2 120 0 780 820 860 900 940 Wavelength λ (nm) 980 1020