Data Sheet

CF
P1
5
PMEG100V060ELPD
100 V, 6 A low leakage current Schottky barrier rectifier
20 May 2016
Product data sheet
1. General description
Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a
CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
•
Average forward current: IF(AV) ≤ 6 A
Reverse voltage: VR ≤ 100 V
Low leakage current due to high Schottky barrier technology
Low forward voltage
High power capability due to clip-bonding technology and heat sink
High temperature Tj ≤ 175 °C
Small and thin SMD power plastic package, typical height 0.78 mm
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Low voltage rectification
Automotive LED lighting
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption application
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward
current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 155 °C;
square wave
-
-
6
A
VR
reverse voltage
Tj = 25 °C
-
-
100
V
VF
forward voltage
IF = 6 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
770
840
mV
IR
reverse current
VR = 100 V; tp ≤ 3 ms; δ ≤ 0.03 ;
Tj = 25 °C
-
0.11
0.45
µA
PMEG100V060ELPD
NXP Semiconductors
100 V, 6 A low leakage current Schottky barrier rectifier
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
A
anode
2
A
anode
3
K
cathode
Simplified outline
Graphic symbol
K
1
3
A
A
aaa-009063
2
CFP15 (SOT1289)
6. Ordering information
Table 3. Ordering information
Type number
PMEG100V060ELPD
Package
Name
Description
Version
CFP15
plastic, thermal enhanced ultra thin SMD package; 3 leads;
body: 5.8 x 4.3 x 0.78 mm
SOT1289
7. Marking
Table 4. Marking codes
Type number
Marking code
PMEG100V060ELPD
100V L06E
PMEG100V060ELPD
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PMEG100V060ELPD
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100 V, 6 A low leakage current Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
100
V
IF
forward current
Tsp ≤ 150 °C; δ = 1
-
8.4
A
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 155 °C;
square wave
-
6
A
IFSM
non-repetitive peak
forward current
tp = 8 ms; Tj(init) = 25 °C; square wave
-
130
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
1.66
W
[2]
-
2.15
W
[3]
-
3.75
W
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
[1]
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
[1]
[2]
[3]
[4]
[5]
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1][2]
-
-
90
K/W
[1][3]
-
-
70
K/W
[1][4]
-
-
40
K/W
[5]
-
-
3
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a
significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Soldering point of cathode tab.
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100 V, 6 A low leakage current Schottky barrier rectifier
aaa-022836
102
1
Zth(j-a)
(K/W)
0.5
0.25
10
0.75
0.33
0.2
0.1
0.05
0.02
0.01
1
duty cycle = 0
10-1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-022837
102
1
Zth(j-a)
(K/W)
0.5
0.25
10
0.75
0.33
0.2
0.1
0.05
0.02
1
0.01
duty cycle = 0
10-1
10-3
10-2
10-1
FR4 PCB, mounting pad for cathode 1 cm
1
10
102
2
tp (s)
103
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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PMEG100V060ELPD
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100 V, 6 A low leakage current Schottky barrier rectifier
aaa-022838
102
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.33
10
0.2
0.05
0.5
0.25
0.1
0.02
0.01
1
0
10-1
10-3
10-2
10-1
1
10
102
tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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100 V, 6 A low leakage current Schottky barrier rectifier
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 1 mA; tp ≤ 1.2 ms; δ ≤ 0.12 ;
Tj = 25 °C; pulsed
100
-
-
V
VF
forward voltage
IF = 0.1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
455
-
mV
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
600
-
mV
IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
670
740
mV
IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
710
770
mV
IF = 4 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
740
810
mV
IF = 6 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
-
770
840
mV
IF = 6 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = -40 °C
-
860
970
mV
IF = 6 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 125 °C
-
630
750
mV
VR = 60 V; tp ≤ 3 ms; δ ≤ 0.03 ;
Tj = 25 °C
-
0.035
-
µA
VR = 80 V; tp ≤ 3 ms; δ ≤ 0.03 ;
Tj = 25 °C
-
0.055
-
µA
VR = 100 V; tp ≤ 3 ms; δ ≤ 0.03 ;
Tj = 25 °C
-
0.11
0.45
µA
VR = 100 V; tp ≤ 3 ms; δ ≤ 0.03 ;
Tj = 125 °C
-
0.22
0.8
mA
VR = 60 V; tp ≤ 3 ms; δ ≤ 0.03 ;
Tj = 150 °C
-
0.5
2
mA
VR = 1 V; f = 1 MHz; Tj = 25 °C
-
200
-
pF
VR = 4 V; f = 1 MHz; Tj = 25 °C
-
120
-
pF
VR = 10 V; f = 1 MHz; Tj = 25 °C
-
80
-
pF
IR
Cd
reverse current
diode capacitance
trr
reverse recovery time
IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
Tj = 25 °C
-
8
-
ns
VFR
forward recovery
voltage
IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
-
565
-
mV
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100 V, 6 A low leakage current Schottky barrier rectifier
aaa-022839
102
IF
(A)
10
IR
(A)
(1)
(2)
(4)
(5)
10-1
(2)
(3)
10-5
(4)
10-6
(5)
10-7
(6)
10-2
(6)
10-8
10-9
(7)
10-3
10-4
(1)
10-3
10-4
(3)
1
aaa-022840
10-2
(7)
10-10
0
0.4
0.8
VF (V)
10-11
1.2
pulsed condition
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 100 °C
(5) Tj = 85°C
(6) Tj = 25 °C
(7) Tj = −40 °C
0
20
40
60
80
VR (V)
100
pulsed condition
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 100 °C
(5) Tj = 85 °C
(6) Tj = 25 °C
(7) Tj = −40 °C
Fig. 4. Forward current as a function of forward voltage; Fig. 5. Reverse current as a function of reverse voltage;
typical values
typical values
aaa-022841
350
Cd
(pF)
300
aaa-022842
6
(4)
(5)
PF(AV)
(W)
250
(3)
4
200
(2)
(1)
150
2
100
50
0
0
20
40
60
80
VR (V)
0
100
f = 1 MHz; Tamb = 25 °C
0
3
6
IF(AV) (A)
9
Tj = 100 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 0.8
(5) δ = 1
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
Fig. 7. Average forward power dissipation as a function
of average forward current; typical values
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Product data sheet
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100 V, 6 A low leakage current Schottky barrier rectifier
aaa-022843
0.006
aaa-022844
0.3
PR(AV)
(W)
PR(AV)
(W)
0.004
0.2
(1)
(1)
(2)
(3)
0.002
(2)
0.1
(4)
(3)
(4)
(5)
0
0
20
40
60
80
VR (V)
0
100
Tj = 100 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
(5) δ = 0.2
40
60
80
VR (V)
100
Fig. 9. Average reverse power dissipation as a function
of reverse voltage; typical values
aaa-022845
6
aaa-022846
6
IF(AV)
(A)
(1)
4
20
Tj = 175 °C
(1) δ = 1
(2) δ = 0.5
(3) δ = 0.2
(4) δ = 0.1
Fig. 8. Average reverse power dissipation as a function
of reverse voltage; typical values
IF(AV)
(A)
0
(1)
(2)
4
(2)
(3)
(3)
(4)
(4)
2
0
2
0
50
100
0
150
200
Tamb (°C)
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Product data sheet
50
100
150
200
Tamb (°C)
2
FR4 PCB, mounting pad for cathode 1 cm
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
PMEG100V060ELPD
0
Fig. 11. Average forward current as a function of
ambient temperature; typical values
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100 V, 6 A low leakage current Schottky barrier rectifier
aaa-022847
10
IF(AV)
(A)
0
(3)
4
(4)
2
(2)
6
(3)
4
(1)
8
(2)
6
0
IF(AV)
(A)
(1)
8
aaa-022848
10
(4)
2
50
100
0
150
200
Tamb (°C)
Ceramic PCB, Al2O3, standard footprint
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
0
50
100
150
Tsp (°C)
200
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 13. Average forward current as a function of solder
point temperature; typical values
Fig. 12. Average forward current as a function of
ambient temperature; typical values
11. Test information
IF
IR(meas)
time
IR
trr
006aad022
Fig. 14. Reverse recovery definition
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100 V, 6 A low leakage current Schottky barrier rectifier
IF
time
VF
VFRM
VF
time
001aab912
Fig. 15. Forward recovery definition
P
tcy
duty cycle δ =
tp
tcy
tp
t
006aac658
Fig. 16. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM
× δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as
RMS current.
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
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100 V, 6 A low leakage current Schottky barrier rectifier
12. Package outline
4.4
4.2
2.13
1.3
1.1
0.45
0.25
2
4.8
4.4
0.82
0.74
1.3
0.9
1
5.9
5.7
4.2
3.8
0.45
0.25
3
2.15
1.95
0.24
0.16
3.5
3.1
Dimensions in mm
6.6
6.4
14-10-13
Fig. 17. Package outline CFP15 (SOT1289)
13. Soldering
Footprint information for reflow soldering of CFP15 package
SOT1289
4.6
3.73
1.4 (2×)
1.8 (2×)
1.6 (2×)
2.13
1.64 1.44 1.34
0.6 0.4
0.11
1.9
7.5
1.02
5.16 4.96
0.2
1.9
occupied area
solder resist
solder lands
solder paste
Issue date
13-08-28
14-03-12
0.2
0.05
0.6
1.7 (4×)
0.2
2.4
3.8
4
Dimensions in mm
sot1289_fr
Fig. 18. Reflow soldering footprint for CFP15 (SOT1289)
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100 V, 6 A low leakage current Schottky barrier rectifier
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG100V060ELPD
v.1
20160520
Product data sheet
-
-
PMEG100V060ELPD
Product data sheet
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100 V, 6 A low leakage current Schottky barrier rectifier
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Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
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100 V, 6 A low leakage current Schottky barrier rectifier
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMEG100V060ELPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
14 / 15
PMEG100V060ELPD
NXP Semiconductors
100 V, 6 A low leakage current Schottky barrier rectifier
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 6
11. Test information......................................................... 9
12. Package outline........................................................ 11
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information..................................................... 13
©
NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 May 2016
PMEG100V060ELPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 May 2016
©
NXP Semiconductors N.V. 2016. All rights reserved
15 / 15