New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 12 - 12 RDS(on) (Ω) ID (A) 0.034 at VGS = 4.5 V 4.5a 0.040 at VGS = 2.5 V 4.5a 0.050 at VGS = 1.8 V 4.5a 0.070 at VGS = 1.5 V 4.5a 0.059 at VGS = - 4.5 V - 4.5a 0.081at VGS = - 2.5 V - 4.5a 0.115 at VGS = - 1.8 V - 4.5a 0.215 at VGS = - 1.5 V - 1.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Typical ESD Protection: N-Channel 1500 V P-Channel 1000 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 5.6 nC APPLICATIONS 7.8 nC • Load Switch for Portable Devices • DC/DC Converters PowerPAK® SC-70-6 Dual D1 S2 1 S1 2 G1 3 D2 D1 D1 6 G1 Marking Code G2 D2 EHX G2 5 2.05 mm 4 S2 2.05 mm Part # code XXX Lot Traceability and Date code D2 S1 Ordering Information: SiA533EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage VDS 12 Gate-Source Voltage VGS 4.5a - 4.5a 4.5a, b, c - 4.5a, b, c 4.5a, b, c - 3.7b, c 20 - 15 4.5a - 4.5a 1.6b, c - 1.6b, c TC = 25 °C 7.8 7.8 TC = 70 °C 5 5 1.9b, c 1.9b, c 1.2b, c 1.2b, c TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current TC = 25 °C Source Drain Current Diode Current TA = 25 °C Maximum Power Dissipation TA = 25 °C IS PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 Temperature)d, e V - 4.5a TC = 70 °C TJ, Tstg Unit - 12 ±8 4.5a TC = 25 °C Continuous Drain Current (TJ = 150 °C) P-Channel - 55 to 150 260 A W °C www.vishay.com 1 New Product SiA533EDJ Vishay Siliconix THERMAL RESISTANCE RATINGS N-Channel Symbol Max. Typ. Max. t≤5s RthJA 52 65 52 65 Steady State RthJC 12.5 16 12.5 16 Parameter b, f Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) P-Channel Typ. Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) VGS = 0 V, ID = 250 µA N-Ch 12 VGS = 0 V, ID = - 250 µA P-Ch - 12 ID = 250 µA N-Ch 19 ID = - 250 µA P-Ch - 5.7 ID = 250 µA N-Ch - 2.7 ID = - 250 µA P-Ch N-Ch 0.4 1.0 VDS = VGS, ID = - 250 µA P-Ch - 0.4 - 1.0 IGSS VDS = 0 V, VGS = ± 8 V VDS = 12 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb IDSS ID(on) RDS(on) Forward Transconductanceb gfs Input Capacitance Ciss Output Capacitance Reverse Transfer Capacitance www.vishay.com 2 1.7 N-Ch ± 0.5 P-Ch ± 0.5 N-Ch ±5 P-Ch ±5 N-Ch 1 -1 VDS = - 12 V, VGS = 0 V P-Ch VDS = 12 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 12 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS ≥ 5 V, VGS = 4.5 V N-Ch 10 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 10 VGS = 4.5 V, ID = 4.6 A N-Ch 0.028 P-Ch 0.048 0.059 VGS = 2.5 V, ID = 4.2 A N-Ch 0.032 0.040 P-Ch 0.066 0.081 VGS = 1.8 V, ID = 3.8 A N-Ch 0.038 0.050 VGS = - 1.8 V, ID = - 2.6 A P-Ch 0.093 0.115 VGS = 1.5 V, ID = 1.5 A N-Ch 0.045 0.070 VGS = - 1.5 V, ID = - 0.5 A P-Ch 0.120 0.215 VDS = 6 V, ID = 4.6 A N-Ch 21 VDS = - 6 V, ID = - 3.6 A P-Ch 11 N-Ch 420 P-Channel VDS = - 6 V, VGS = 0 V, f = 1 MHz µA 0.034 VGS = - 2.5 V, ID = - 3.1 A N-Channel VDS = 6 V, VGS = 0 V, f = 1 MHz V A VGS = - 4.5 V, ID = - 3.6 A Coss Crss mV/°C VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 4.5 V Gate-Body Leakage V P-Ch 545 N-Ch 100 P-Ch 192 N-Ch 62 P-Ch 175 Ω S pF Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 New Product SiA533EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamica Total Gate Charge Symbol Qg Test Conditions VDS = 10 V, VGS = 10 V, ID = 5.9 A VDS = - 10 V, VGS = - 10 V, ID = - 4.7 A N-Channel VDS = 10 V, VGS = 4.5 V, ID = 5.9 A Gate-Source Charge Qgs Gate-Drain Charge Qgd P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A Gate Resistance Rg f = 1 MHz N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Unit 15 20 8.5 12 0.7 1.4 10 13 5.6 7.8 0.7 1.3 0.85 2.3 3.5 7 7 14 Ω Min. Typ. Max. Unit 10 15 10 15 20 25 10 10 5 5 10 10 20 25 10 10 15 25 15 25 30 40 15 15 10 10 15 15 30 40 15 15 ns nC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Symbol td(on) tr td(off) tf td(on) tr td(off) tf Test Conditions N-Channel VDD = 6 V, RL = 1.3 Ω ID ≅ 4.8 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = - 6 V, RL = 1.6 Ω ID ≅ - 3.7 A, VGEN = - 4.5 V, Rg = 1 Ω N-Channel VDD = 6 V, RL = 1.3 Ω ID ≅ 4.8 A, VGEN = 8 V, Rg = 1 Ω P-Channel VDD = - 6 V, RL = 1.6 Ω ID ≅ - 3.7 A, VGEN = - 8 V, Rg = 1 Ω N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time TC = 25 °C IS = 4.8 A, VGS = 0 V IS = - 3.7 A, VGS = 0 V trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta P-Channel IF = - 3.7 A, dI/dt = - 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.85 - 0.87 10 25 5 10 5.5 17 4.5 8 4.5 - 4.5 20 - 15 1.2 - 1.2 20 50 10 20 A V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 www.vishay.com 3 New Product SiA533EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10-2 2.5 10-3 I GSS - Gate Current (A) I G - Gate Current (mA) 2.0 TJ = 25 °C 1.5 1.0 10-4 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 10-8 0.5 10-9 10-10 0 0 3 6 9 12 0 15 3 VGS - Gate-to-Source Voltage (V) 6 9 12 15 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 10 20 VGS = 5 V thru 2 V 8 I D - Drain Current (A) I D - Drain Current (A) 16 12 VGS = 1.5 V 8 6 TC = 125 °C 4 TC = 25 °C 2 4 TC = - 55 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.3 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 800 0.08 VGS = 1.5 V 600 0.06 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.07 0.05 VGS = 1.8 V 0.04 VGS = 2.5 V 0.03 Ciss 400 Coss 200 VGS = 4.5 V 0.02 Crss 0 0.01 0 4 8 12 16 20 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage www.vishay.com 4 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 New Product SiA533EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 8 VGS = 1.5 V, ID = 1.5 A 1.4 6 RDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) ID = 5.9 A VDS = 6 V 4 VDS = 3 V VDS = 9.6 V 2 VGS = 1.8 V, 2.5 V, 4.5 V, ID = 4.6 A 1.2 1.0 0.8 0.6 - 50 0 0 2 4 6 8 10 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.08 100 10 TJ = 150 °C ID = 1.5 A, 125 °C R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 4.6 A, 125 °C TJ = 25 °C 1 0.06 ID = 1.5 A, 25 °C 0.04 ID = 4.6 A, 25 °C 0.02 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) ID - Drain Current (A) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.8 20 ID = 250 µA 0.7 15 Power (W) VGS(th) (V) 0.6 0.5 10 0.4 5 0.3 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 www.vishay.com 5 New Product SiA533EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 10 ms 1 1 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 V DS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 15 Power Dissipation (W) I D - Drain Current (A) 12 9 6 Package Limited 6 4 2 3 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 New Product SiA533EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110°C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 www.vishay.com 7 New Product SiA533EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10-1 3.0 10-2 2.5 Ig - Gate Current (mA) Ig - Gate Current (mA) 10-3 2.0 1.5 1.0 TJ = 150 °C 10-4 10-5 TJ = 25 °C 10-6 10-7 10-8 TJ = 25 °C 0.5 10-9 10-10 0.0 0.0 4.0 8.0 12.0 16.0 0.0 4.0 8.0 12.0 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 16.0 10 15 VGS = 5 V thru 2 V 8 9 I D - Drain Current (A) I D - Drain Current (A) 12 VGS = 2 V 6 VGS = 1.5 V 6 TC = 125 °C 4 TC = 25 °C 2 3 TC = - 55 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 1000 VGS = 1.5 V VGS = 1.8 V 800 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.16 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V 0.04 Ciss 600 400 Coss 200 Crss 0.00 0 0 3 6 9 12 15 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage www.vishay.com 8 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 New Product SiA533EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.5 8 1.4 6 VGS = 2.5 V, 4.5 V, ID = 3.6 A 1.3 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 4.7 A VDS = 6 V 4 VDS = 3 V VDS = 9.6 V 2 1.2 VGS = 1.5 V, 1.8 V ID = 1 A 1.1 1.0 0.9 0.8 0 0 3 6 9 12 0.7 - 50 15 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.20 100 ID = 3.6 A, 125 °C ID = 3.6 A, 25 °C RDS(on) - On-Resistance (Ω) I S - Source Current (A) 0.16 10 TJ = 150 °C TJ = 25 °C 1 0.12 0.08 ID = 1 A, 125 °C 0.04 0.00 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.0 VSD - Source-to-Drain Voltage (V) 2.0 ID = 1 A, 25 °C 3.0 4.0 5.0 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.85 20 0.80 ID = 250 µA 0.75 15 Power (W) VGS(th) (V) 0.70 0.65 0.60 0.55 10 5 0.50 0.45 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) Threshold Voltage Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power (Junction-to-Ambient) www.vishay.com 9 New Product SiA533EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1 s, 10 s 0.1 DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 12 Power Dissipation (W) ID - Drain Current (A) 10 8 6 4 Package Limited 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 New Product SiA533EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65706. Document Number: 65706 S10-0214-Rev. A, 25-Jan-10 www.vishay.com 11 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000