Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 ■ Features 3.5±0.1 For general amplification Complementary to 2SD1992A 0.85 14.5±0.5 0.65 max. • Large collector power dissipation PC (600 mW) • Allowing supply with the radial taping +0.1 ■ Absolute Maximum Ratings Ta = 25°C 1 Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −50 V Emitter to base voltage VEBO −7 V Peak collector current ICP −1 A Collector current IC −500 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2 3 2.5±0.1 Parameter 2.5±0.5 +0.1 2.5±0.5 0.45−0.05 0.45−0.05 1: Emitter 2: Collector 3: Base MT1 Type Package Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = −20 V, IE = 0 − 0.1 µA ICEO VCE = −20 V, IB = 0 −1 µA Collector to base voltage VCBO IC = −10 µA, IE = 0 −60 V Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −50 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −7 Forward current transfer ratio *1 hFE1 *2 VCE = −10 V, IC = −10 mA 85 hFE2 VCE = −10 V, IC = −500 mA 40 VCE(sat) IC = −300 mA, IB = −30 mA Collector cutoff current Collector to emitter saturation voltage Transition frequency VCB = −10 V, IE = 10 mA, f = 200 MHz fT Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz V 340 − 0.35 − 0.6 200 6 V MHz 15 pF Note) *1: Pulse measurement *2: Rank classification Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SB1321A Transistors PC Ta IC VCE IB = −10 mA −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −600 400 300 −400 200 −3 mA −2 mA −200 100 0 20 40 60 80 100 120 140 160 0 –2 −10 −3 Ta = 75°C 25°C −25°C –8 –10 −100 0 –12 Base current IB (mA) 600 IC / IB = 10 −30 −10 −3 25°C −1 Ta = −25°C 75°C − 0.03 −1 −3 −10 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 −1 −3 VCE = −10 V 500 400 300 Ta = 75°C 25°C −25°C 200 100 0 − 0.01 − 0.03 − 0.1 − 0.3 −10 Cob VCB 24 200 180 160 140 120 100 80 60 40 20 20 −10 VCER RBE IE = 0 f = 1 MHz Ta = 25°C 22 Collector output capacitance Cob (pF) VCB = −10 V Ta = 25°C −3 18 16 14 12 10 8 6 4 −120 Collector to emitter voltage VCER (V) fT IE 240 −1 Collector current IC (A) Collector current IC (A) Collector current IC (A) 220 0 −1 −2 −3 −4 −5 −6 −7 −8 −9 −10 hFE IC − 0.1 − 0.01 − 0.01 − 0.03 − 0.1 − 0.3 Transition frequency fT (MHz) –6 − 0.3 − 0.03 IC = −2 mA Ta = 25°C −100 −80 −60 −40 −20 2 1 2 3 5 10 20 30 50 Emitter current IE (mA) 2 –4 −100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) IC / IB = 10 − 0.1 −200 VBE(sat) IC −30 − 0.3 −300 −1 mA VCE(sat) IC −1 −400 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) −100 −500 Forward current transfer ratio hFE 0 Collector current IC (mA) −600 −800 500 VCE = −10 V Ta = 25°C −700 −1 000 600 0 −800 Ta = 25°C Collector current IC (mA) Collector power dissipation PC (mW) 700 0 IC IB −1 200 800 100 0 −1 −2 −3 −5 −10 −20−30 −50 −100 Collector to base voltage VCB (V) 0 1 3 10 30 100 300 1 000 Base to emitter resistance RBE (kΩ) Transistors 2SB1321A ICEO Ta 104 VCE = −10 V ICEO (Ta) ICEO (Ta = 25°C) 103 102 10 1 0 20 40 60 80 100 120 140 160 180 200 Ambient temperature Ta (°C) 3