PMEG2002ESF 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 8 October 2013 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package. 2. Features and benefits • • • • • • Average forward current IF(AV) ≤ 0.2 A Reverse voltage VR ≤ 20 V Low forward voltage typ. VF 310 mV Low reverse current typ. IR 0.88 µA Ultra small and leadless SMD package Package height typ. 0.3 mm 3. Applications • • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Low power consumption applications Ultra high-speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tsp ≤ 125 °C; - - 0.2 A - - 0.2 A square wave δ = 0.5 ; f = 20 kHz; Tamb ≤ 115 °C; [1] square wave VR reverse voltage Tj = 25 °C - - 20 V VF forward voltage IF = 10 mA; pulsed; tp ≤ 300 µs; - 310 380 mV - 0.37 - µA δ ≤ 0.02 ; Tj = 25 °C IR reverse current [1] VR = 10 V; Tj = 25 °C Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Scan or click this QR code to view the latest information for this product PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline Graphic symbol 1 1 2 2 sym001 Transparent top view DSN0603-2 (SOD962-2) [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number Package PMEG2002ESF Name Description Version DSN0603-2 Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 7. Marking Table 4. Marking codes Type number Marking code PMEG2002ESF E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 20 V IF forward current Tsp ≤ 120 °C - 0.28 A IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tsp ≤ 125 °C; - 0.2 A - 0.2 A square wave δ = 0.5 ; f = 20 kHz; Tamb ≤ 115 °C; [1] square wave IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 1 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 4.5 A Ptot total power dissipation Tamb ≤ 25 °C - 325 mW PMEG2002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 8 October 2013 [2] © NXP N.V. 2013. All rights reserved 2 / 13 PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier Symbol Parameter Conditions Min Max Unit [3] - 525 mW [1] - 950 mW Tj junction temperature - 125 °C Tamb ambient temperature -55 125 °C Tstg storage temperature -65 150 °C [1] [2] [3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 2 1 cm each. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] Min Typ Max Unit [1][2] - - 310 K/W [1][3] - - 190 K/W [1][4] - - 105 K/W [5] - - 40 K/W [2] [3] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode [4] [5] 1 cm each. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. 2 aaa-006823 103 duty cycle = Zth(j-a) (K/W) 1 0.75 102 0.33 0.2 0.5 0.25 0.1 0.05 0.02 0 10 10-3 0.01 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 8 October 2013 © NXP N.V. 2013. All rights reserved 3 / 13 PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-006824 103 Zth(j-a) (K/W) duty cycle = 102 0.75 0.33 0.2 1 0.5 0.25 0.1 0.02 0.01 0 0.05 10 10-3 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, mounting pad for anode and cathode 1 cm each Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 aaa-006825 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 0.25 0.1 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 8 October 2013 © NXP N.V. 2013. All rights reserved 4 / 13 PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 0.1 mA; pulsed; tp ≤ 300 µs; - 185 250 mV - 245 320 mV - 310 380 mV - 390 450 mV - 435 490 mV VR = 6 V; Tj = 25 °C - 0.26 1.5 µA VR = 10 V; Tj = 25 °C - 0.37 - µA VR = 20 V; Tj = 25 °C - 0.88 3.5 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 25 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 9 - pF IF = 200 mA; IR = 200 mA; - 1.9 - ns δ ≤ 0.02 ; Tj = 25 °C IF = 1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IR reverse current Cd diode capacitance trr reverse recovery time IR(meas) = 40 mA; Tj = 25 °C aaa-006826 10 IR (A) IF (A) 1 aaa-006827 10-3 10-4 (1) 10-5 (2) 10-6 10-1 (3) 10-7 10-2 10-8 (1) 10-9 10-3 (2) 10-4 Fig. 4. 0 (3) 0.2 0.4 (4) 10-10 (4) 0.6 0.8 VF (V) 1.0 10-11 0 5 (1) Tj = 125 °C (1) Tj = 125 °C (2) Tj = 85 °C (2) Tj = 85 °C (3) Tj = 25 °C (3) Tj = 25 °C (4) Tj = −40 °C (4) Tj = −40 °C Forward current as a function of forward voltage; typical values PMEG2002ESF Product data sheet Fig. 5. 15 VR (V) 20 Reverse current as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. 8 October 2013 10 © NXP N.V. 2013. All rights reserved 5 / 13 PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-006828 50.0 aaa-008574 0.12 (4) Cd (pF) PF(AV) (W) 37.5 (3) 0.08 (2) (1) 25.0 0.04 12.5 0 Fig. 6. 0 4 8 12 16 VR (V) 0 20 0 f = 1 MHz; Tamb = 25 °C Tj = 125 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. aaa-008575 15 PR(AV) (mW) IF(AV) (A) 0.3 aaa-008576 0.3 (2) 10 0.2 Average forward power dissipation as a function of average forward current; typical values (1) IF(AV) (A) (1) 0.1 0.2 (2) (3) 5 0 (4) 0 5 10 15 VR (V) (4) 0 20 Tj = 125 °C Average reverse power dissipation as a function of reverse voltage; typical values PMEG2002ESF Product data sheet 0 50 100 Tamb (°C) 150 FR4 PCB, standard footprint Tj = 125 °C (1) δ = 1 (DC) (2) δ = 0.9; f = 20 kHz (3) δ = 0.8; f = 20 kHz (4) δ = 0.5; f = 20 kHz Fig. 8. (3) 0.1 (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 9. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 8 October 2013 © NXP N.V. 2013. All rights reserved 6 / 13 PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier aaa-008577 0.3 (1) IF(AV) (A) 0.2 (1) IF(AV) (A) 0.2 (2) (3) 0.1 aaa-008578 0.3 (2) (3) 0.1 (4) (4) 0 0 50 100 Tamb (°C) 0 150 FR4 PCB, mounting pad for anode and cathode 1 0 50 100 Tamb (°C) 150 Ceramic PCB, Al2O3, standard footprint 2 Tj = 125 °C cm each Tj = 125 °C (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 11. Average forward current as a function of ambient temperature; typical values Fig. 10. Average forward current as a function of ambient temperature; typical values aaa-008579 0.3 (1) IF(AV) (A) 0.2 (2) (3) 0.1 (4) 0 0 50 100 Tsp (°C) 150 Tj = 125 °C (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 12. Average forward current as a function of solder point temperature; typical values PMEG2002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 8 October 2013 © NXP N.V. 2013. All rights reserved 7 / 13 PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 13. Reverse recovery definition P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 14. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. PMEG2002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 8 October 2013 © NXP N.V. 2013. All rights reserved 8 / 13 PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 12. Package outline Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 L 1 2 b e1 A A1 E D (1) 0 0.5 mm scale Dimensions (mm are the original dimensions) Unit A max 0.32 nom min 0.28 mm A1 0.03 b D E e1 0.25 0.325 0.625 0.23 0.275 0.575 0.4 L 0.15 0.13 Note 1. The marking bar indicates the cathode. Outline version sod962-2_po References IEC JEDEC JEITA European projection Issue date 13-07-12 13-07-17 SOD962-2 Fig. 15. Package outline DSN0603-2 (SOD962-2) PMEG2002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 8 October 2013 © NXP N.V. 2013. All rights reserved 9 / 13 PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 13. Soldering Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962-2 0.85 0.4 0.4 R0.025 (8×) 0.22 (2×) 0.12 (2×) 0.2 (2×) solder land solder land plus solder paste solder paste deposit solder resist Dimensions in mm sod962-2_fr Fig. 16. Reflow soldering footprint for DSN0603-2 (SOD962-2) 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG2002ESF v.2 20131008 Product data sheet - PMEG2002ESF v.1 Modifications: • PMEG2002ESF v.1 20130301 - - PMEG2002ESF Product data sheet Product status changed Objective data sheet All information provided in this document is subject to legal disclaimers. 8 October 2013 © NXP N.V. 2013. All rights reserved 10 / 13 PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PMEG2002ESF Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 8 October 2013 © NXP N.V. 2013. All rights reserved 11 / 13 PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMEG2002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 8 October 2013 © NXP N.V. 2013. All rights reserved 12 / 13 PMEG2002ESF NXP Semiconductors 20 V, 0.2 A low VF MEGA Schottky barrier rectifier 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 5 11 Test information ..................................................... 8 12 Package outline ..................................................... 9 13 Soldering .............................................................. 10 14 Revision history ................................................... 10 15 15.1 15.2 15.3 15.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP N.V. 2013. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 8 October 2013 PMEG2002ESF Product data sheet All information provided in this document is subject to legal disclaimers. 8 October 2013 © NXP N.V. 2013. All rights reserved 13 / 13