PMEG2015EPK 20 V, 1.5 A low VF MEGA Schottky barrier rectifier Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits Average forward current: IF(AV) ≤ 1.5 A AEC-Q101 qualified Reverse voltage: VR ≤ 20 V Solderable side pads Low forward voltage VF ≤ 420 mV Package height typ. 0.37 mm Low reverse current Ultra small and leadless SMD plastic package 1.3 Applications Low voltage rectification Low power consumption applications High efficiency DC-to-DC conversion Ultra high-speed switching Switch mode power supply Reverse polarity protection LED backlight for mobile application 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions average forward current δ < 0.5; f = 20 kHz; Tamb ≤ 100 °C; square wave IF(AV) Min Typ Max Unit - - 1.5 A δ < 0.5; f = 20 kHz; Tsp ≤ 140 °C; square wave - - 1.5 A [1] VR reverse voltage Tj = 25 °C - - 20 V VF forward voltage IF = 1.5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 375 420 mV IR reverse current VR = 10 V; Tj = 25 °C - 70 350 µA trr reverse recovery time IR = 0.5 A; IF = 0.5 A; IR(meas) = 0.1 A; Tj = 25 °C - 5 - ns [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pin Pinning information Symbol Description 1 K cathode[1] 2 A anode Simplified outline Graphic symbol 1 1 2 2 sym001 Transparent top view SOD1608 (DFN1608D-2) [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMEG2015EPK DFN1608D-2 Leadless ultra small plastic package; 2 terminals SOD1608 4. Marking Table 4. Marking codes Type number Marking code PMEG2015EPK 1100 0000 VENDOR CODE CATHODE BAR READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac909 Fig 1. SOD1608 binary marking code description PMEG2015EPK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 2 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 20 V IF forward current Tsp ≤ 135 °C - 2.1 A average forward current δ < 0.5; f = 20 kHz; square wave; Tamb ≤ 100 °C - 1.5 A - 1.5 A IF(AV) [1] δ < 0.5; f = 20 kHz; square wave; Tsp ≤ 140 °C IFRM repetitive peak forward current tp = 1 ms; δ = 0.25 - 4 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 5 A Ptot total power dissipation Tamb ≤ 25 °C [2][3] - 415 mW [4][3] - 895 mW [1][3] - 1565 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air thermal resistance from junction to solder point Min Typ Max Unit [1][2][3] - - 300 K/W [1][4][3] - - 140 K/W [1][5][3] - - 80 K/W [6] - - 20 K/W [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PRare a significant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Reflow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. [6] Soldering point of cathode tab. PMEG2015EPK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 3 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier 006aad023 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aad024 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 0.05 10 10-3 0.02 0.01 0 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for cathode 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2015EPK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 4 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier 006aad025 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0 10 10-3 0.02 0.01 10-2 10-1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 230 260 mV IF = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 290 330 mV IF = 1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 330 380 mV IF = 1.5 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C - 375 420 mV VR = 10 V; Tj = 25 °C - 70 350 µA VR = 20 V; Tj = 25 °C - 220 900 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 105 120 pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 40 50 pF IR Cd reverse current diode capacitance trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; Tj = 25 °C - 5 - ns VFRM peak forward recovery voltage IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 320 - mV PMEG2015EPK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 5 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier 006aad026 10 IF (A) 1 006aad027 10-1 IR (A) 10-2 (1) (1) 10-1 (2) 10-3 (2) (3) (4) (3) 10-4 (5) 10-5 10-2 10-6 (4) 10-3 10-7 10-4 0.0 0.2 0.4 VF (V) 0.6 10-8 0 5 (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C 10 15 VR (V) 20 (5) Tj = −40 °C Fig 5. Forward current as a function of forward voltage; typical values 006aad028 200 Fig 6. Reverse current as a function of reverse voltage; typical values 006aad029 0.75 Cd (pF) PF(AV) (W) (3) 150 (4) (2) (1) 0.50 100 0.25 50 0 0 5 10 15 VR (V) 20 0.00 0.0 f = 1 MHz; Tamb = 25 °C 0.5 1.0 1.5 2.0 2.5 IF(AV) (A) Tj = 150 °C (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig 7. Diode capacitance as a function of reverse voltage; typical values PMEG2015EPK Product data sheet Fig 8. Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 6 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier 006aad030 1.25 006aad031 2.25 PR(AV) (W) IF(AV) (A) 1.00 (2) 1.50 (1) 0.75 (1) (2) (3) (3) 0.50 0.75 (4) (4) 0.25 0.00 0 5 10 15 VR (V) 20 0.0 0 25 50 75 100 125 Tj = 125 °C FR4 PCB, standard footprint (1) δ = 1 Tj = 150 °C (2) δ = 0.9 (1) δ = 1 (DC) (3) δ = 0.8 (2) δ = 0.5; f = 20 kHz (4) δ = 0.5 (3) δ = 0.2; f = 20 kHz 150 175 Tamb (°C) (4) δ = 0.1; f = 20 kHz Fig 9. Average reverse power dissipation as a function of reverse voltage; typical values 006aad032 2.25 Fig 10. Average forward current as a function of ambient temperature; typical values 006aad033 2.25 (1) (1) IF(AV) (A) IF(AV) (A) (2) (2) 1.50 1.50 (3) (3) 0.75 0.75 (4) 0.0 0 (4) 25 50 75 100 125 150 175 Tamb (°C) 0.0 0 25 50 75 100 125 150 175 Tamb (°C) FR4 PCB, mounting pad for cathode 1 cm2 Ceramic PCB, Al2O3, standard footprint Tj = 150 °C Tj = 150 °C (1) δ = 1 (DC) (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 11. Average forward current as a function of ambient temperature; typical values PMEG2015EPK Product data sheet Fig 12. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 7 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier 006aad034 2.25 (1) IF(AV) (A) (2) 1.50 (3) 0.75 (4) 0.0 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 13. Average forward current as a function of solder point temperature; typical values 8. Test information IF IR(meas) time IR trr 006aad022 Fig 14. Reverse recovery definition PMEG2015EPK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 8 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier IF time VF VFRM VF time 001aab912 Fig 15. Forward recovery definition P tcy duty cycle δ = tp tcy tp t 006aac658 Fig 16. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG2015EPK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 9 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier 9. Package outline 0.40 0.34 0.85 0.75 1 0.80 0.72 1.65 1.55 0.40 0.32 2 0.75 0.67 0.04 Dimensions in mm 11-11-21 Fig 17. Package outline SOD1608 (DFN1608D-2) 10. Soldering Footprint information for reflow soldering of SOD1608 package SOD1608 1.15 0.75 1.05 0.65 0.95 0.55 0.9 0.8 0.7 0.7 0.8 0.9 1 2 0.1 0.2 1.8 1.9 2.0 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sod1608_fr Fig 18. Reflow soldering footprint for SOD1608 (DFN1608D-2) PMEG2015EPK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 10 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEG2015EPK v.1 20120306 Product data sheet - - PMEG2015EPK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 11 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data— The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications— Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 12 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Export control— This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. 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Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:[email protected] PMEG2015EPK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved. 13 of 14 PMEG2015EPK NXP Semiconductors 20 V, 1.5 A low VF MEGA Schottky barrier rectifier 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . .8 Quality information . . . . . . . . . . . . . . . . . . . . . . .9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 March 2012 Document identifier: PMEG2015EPK