BGF120A Data Sheet (1.5 MB, EN)

TVS Diodes
Transient Voltage Suppressor Diodes
BGF120A
Dual Channel Ultra-Low Capacitance ESD Diode
Datasheet
Rev. 1.4, 2012-09-17
Final
Power Management & Multimarket
Edition 2012-09-17
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGF120A
Revision History Rev.1.3, 2012-08-01
Page or Item
Subjects (major changes since previous revision)
Rev. 1.4, 2012-09-17
12
Package outline updated
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Final Datasheet
3
Rev. 1.4, 2012-09-17
BGF120A
BGF120A Dual Channel Ultra-Low Capacitance ESD Diode
1
BGF120A Dual Channel Ultra-Low Capacitance ESD Diode
1.1
Features
•
•
•
•
•
•
•
ESD /transient protection of high-speed data and RF antenna lines exceeding:
– IEC61000-4-2 (ESD): 18 kV (contact)
Max. reverse working voltage: 5.3 V
Ultra-low capacitance:
– < 0.75 pF (max.) in bi-directional configuration
– < 1.5 pF (max.) in uni-directional configuration
Very low reverse current: < 1 nA (typ.)
Small leadless plastic package with 0.75 mm x 0.75 mm size (typ.) and 0.66 mm height (max.)
400 μm pad pitch and 40 μm Sn solder depot on pads
RoHS and WEEE compliant package
1.2
•
•
Application
USB 2.0, 10/100/1000 Ethernet, Firewire, DVI, HDMI, S-ATA
RF antenna protection e.g. GPS, FM radio, mobile TV
1.3
Description
The BGF120A can be used for 2 lines uni-directional or 1 line bi-directional ESD and surge protection up to 20 kV
contact discharge according to IEC61000-4-2. The capacitance of the device is less then 0.75 pF (max.) in bidirectional configuration and less than 1.5 pF (max.) in uni-directional configuration. Maximum reverse working
voltage is 5.3 V (uni-directional) or ±5.3 V (bi-directional). The reverse leakage current is less than 1 nA (typ.). The
leadless plastic package has 0.75 mm x 0.75 mm typical size and maximum height of 0.66 mm. The pads have
400 μm pitch and offer 40 μm Sn for high reliability soldering
Pin 1
A1
A2
Pin 4
Pin 2
B1
B2
Pin 3
(a) Pin configuration (top view)
A1
A2
B1
B2
(b) Schematic diagram
BGF120 A_pin _configuration _schematic.vsd
Figure 1-1 Pin Configuration and Schematic Diagram
Type
BGF120A
Package
TSLP-4-8
Configuration
2 lines, uni-directional
Marking code
1)
A
1) Or 1 line, bi-directional between A1 and A2, if B1, B2 are not connected
Final Datasheet
4
Rev. 1.4, 2012-09-17
BGF120A
Electrical Characteristics
2
Electrical Characteristics
Table 2-1
Maximum Ratings TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Operating temperature range
TOP
-40
-
+125
°C
Storage temperature range
TSTG
-65
-
+150
°C
VESD
-
-
18
kV
1)
Contact discharge
1) VESD according to IEC61000-4-2
Note /
Test Condition
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 2-2
DC Electrical Characteristics TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note /
Test Condition
Reverse working voltage
VRWM
-
-
5.3
V
Breakdown voltage
VBR
6
-
-
V
IBR = 1 mA
Reverse current
IR
-
<1
50
nA
VR = 5.3V
Table 2-3
DC Electrical Characteristics TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Line capacitance
A1 or A2 to B1/B2
A1 to A2, B1/B2 n.c.
CL
Series inductance per diode
LS
Values
Min.
Typ.
Max.
-
-
1.5
0.75
-
0.25
-
Unit
Note /
Test Condition
pF
VR = 0 V, f = 1 MHz
nH
1) Total capacitance line to ground
Final Datasheet
5
Rev. 1.4, 2012-09-17
BGF120A
Electrical Characteristics
Table 2-4
ESD Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Reverse clamping voltage
A1 or A2 vs B1, B2
A1 or A2 vs B1, B2
1)
Forward clamping voltage
A1 or A2 vs B1, B2
A1 or A2 vs B1, B2
1)
Dynamic resistance
positive pulse A1 or A2 vs. B1, B2
negative pulse A1 or A2 vs B1, B2
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
-
22
-
ITLP = 16 A,
-
31
-
ITLP = 30 A,
V
VCL
V
VFC
-
-14
-
ITLP = -16 A,
-
-20
-
ITLP = -30 A,
-
0.7
0.5
-
Ω
RDYN
1) ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitive Testing using Transmission Line Pulse (TLP) Model. TLP
conditions: Z0 = 50 Ω, tp = 100 ns, tr = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic
resistance using least squares fit of TLP characteristic between IPP1 = 10 A and IPP2 = 30 A. Please refer to Application
Note AN210[1].
Final Datasheet
6
Rev. 1.4, 2012-09-17
BGF120A
Typical Characteristics
3
Typical Characteristics
-3
10
10-4
-5
10
10-6
-7
IR [A]
10
10-8
-9
10
10-10
10
-11
10
-12
0
1
2
3
VR [V]
4
5
Figure 3-1 Reverse current IR = f(VR)
1.5
1.25
CL [pF]
1
0.75
0.5
0.25
0
0
0.5
1
1.5
2
2.5
3
3.5
VR [V]
4
4.5
5
5.5
6
Figure 3-2 Capacitance A1vs. B1, A2 vs. B2, CL(A1,B1) = CL(A2,B2) = f(VR)
Final Datasheet
7
Rev. 1.4, 2012-09-17
BGF120A
Typical Characteristics
70
Scope: 20 GS/s
60
50
VCL-max-peak = 62.5 [V]
VCL [V]
40
VCL-30ns-peak = 18.6 [V]
30
20
10
0
-10
-100
0
100
200
300
400
tp [ns]
500
600
700
800
900
Figure 3-3 Clamping voltage at +8 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF)
10
Scope: 20 GS/s
0
-10
VCL [V]
-20
-30
VCL-max-peak = -62.7 [V]
-40
VCL-30ns-peak = -10.6 [V]
-50
-60
-70
-100
0
100
200
300
400
tp [ns]
500
600
700
800
900
Figure 3-4 Clamping voltage at -8 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF)
Final Datasheet
8
Rev. 1.4, 2012-09-17
BGF120A
Typical Characteristics
120
Scope: 20 GS/s
100
VCL [V]
80
VCL-max-peak = 104.2 [V]
60
VCL-30ns-peak = 25.4 [V]
40
20
0
-20
-100
0
100
200
300
400
tp [ns]
500
600
700
800
900
Figure 3-5 Clamping voltage at +15 kV discharge according IEC61000-4-2 (R = 330 Ohm, C = 150 pF)
20
Scope: 20 GS/s
0
VCL [V]
-20
-40
VCL-max-peak = -108.3 [V]
-60
VCL-30ns-peak = -14.9 [V]
-80
-100
-120
-100
0
100
200
300
400
tp [ns]
500
600
700
800
900
Figure 3-6 Clamping voltage at -15 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF)
Final Datasheet
9
Rev. 1.4, 2012-09-17
BGF120A
Typical Characteristics
35
20
BGF120A A1-B1
RDYN
17.5
30
15
RDYN = 0.67 Ω
ITLP [A]
25
12.5
20
10
15
7.5
10
5
5
2.5
0
0
-5
-2.5
-10
-5
-15
-7.5
-20
-10
-25
RDYN = 0.45 Ω
Equivalent VIEC [kV]
40
-12.5
-30
-15
-35
-17.5
-40
-20
-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40
VTLP [V]
Figure 3-7 Clamping voltage (TLP): ITLP = f(VTLP) according ANSI/ESD STM5.5.1- Electrostatic Dischange
Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 Ω,
tp = 100 ns, tr = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using squares fit to ELP charactersistic between ITLP1 = 10 A and
ITLP2 = 30 A. Please refer to Application Note AN210 [1]
Final Datasheet
10
Rev. 1.4, 2012-09-17
BGF120A
Application and Signal Routing
4
Application and Signal Routing
Application example for high-speed data line protection (uni-directional)
Connector
This low parasitic capacitance dual channel TVS diode array can be used either in a 2 channel uni-directional
configuration or in a single channel bi-directional configuration. Due to the low capacitance and low inductance
the configurations are perfect fit for ultra high-speed interfaces, such as USB2.0/3.0, S-ATA, DVI or HDMI ports.
Signal level: 0 … +5.3V
A1
A2
B1
B2
ESD
sensitive
circuit
The protection diode
should be placed very
close to the location
where the ESD or other
transients can occur to
keep loops and
inductances as small
as possible. Pin B1, B2
should be directly
connected to a ground
plane on the board.
Figure 4-1 Application example for high-speed data line protection (uni-directional)
Application example for RF antenna line (bi-directional)
Connecting pin A1(A2) to the signal line and A2(A1) to GND and leaving pin B1/B2 floating even further reduces
the parasitics to 0.75 pF only and correspondingly enable the user to add reliable ESD protection to RF antennas
in e.g. GPS, FM radio or mobile TV applications without influence of the RF circuitry.
Signal level: -5.3V … +5.3V
A1
B1
A2
B2
ESD
sensitive
circuit
Pin A1 (or A2) should be
directly connected to the RF
signal line and A2 (or A1)
should be connected
directly to a ground plane
on the board.
B1, B2 should be not
connected.
Figure 4-2 Application example for RF antenna line (bi-directional)
Final Datasheet
11
Rev. 1.4, 2012-09-17
BGF120A
Package
Package
Bottom view
0.6 +0.06
0.75 ±0.035
0.25 ±0.025
0.4 ±0.025
0.055 MAX.
1)
2
3
4
1
0.75 ±0.035
Top view
0.25 ±0.025 1)
5
0.4 ±0.025
Pin 1 marking
1) Dimension applies to plated terminals
TSLP-4-8-PO V01
Figure 5-1 Package outline for TSLP-4-8 (dimension in mm)
0.4
0.4
0.25
TSLP-4-8-FP V01
Figure 5-2 Package footprint for TSLP-4-8 (dimension in mm)
4
Pin 1 marking
0.85
8
0.85
0.23
0.7
TSLP-4-8-TP V03
Figure 5-3 Tape and Reel Information for TSLP-4-8 (dimension in mm)
Pin 1 marking
Type code
Figure 5-4 Marking (example) for TSLP-4-8
Final Datasheet
12
Rev. 1.4, 2012-09-17
BGF120A
References
References
[1]
Infineon Technologies AG, “Effective ESD Protection Design at System Level Using VF-TLP
Characterization Methodology”, Application Note 210, RF and Protection Devices, April 22, 2010, Rev.1.0
[2]
Infineon Technologies AG, “Recommendation for PCB Assembly of Infineon TSLP and TSSLP Packages”.
Final Datasheet
13
Rev. 1.4, 2012-09-17
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
Similar pages