TVS Diodes Transient Voltage Suppressor Diodes BGF120A Dual Channel Ultra-Low Capacitance ESD Diode Datasheet Rev. 1.4, 2012-09-17 Final Power Management & Multimarket Edition 2012-09-17 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 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BGF120A Revision History Rev.1.3, 2012-08-01 Page or Item Subjects (major changes since previous revision) Rev. 1.4, 2012-09-17 12 Package outline updated Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Final Datasheet 3 Rev. 1.4, 2012-09-17 BGF120A BGF120A Dual Channel Ultra-Low Capacitance ESD Diode 1 BGF120A Dual Channel Ultra-Low Capacitance ESD Diode 1.1 Features • • • • • • • ESD /transient protection of high-speed data and RF antenna lines exceeding: – IEC61000-4-2 (ESD): 18 kV (contact) Max. reverse working voltage: 5.3 V Ultra-low capacitance: – < 0.75 pF (max.) in bi-directional configuration – < 1.5 pF (max.) in uni-directional configuration Very low reverse current: < 1 nA (typ.) Small leadless plastic package with 0.75 mm x 0.75 mm size (typ.) and 0.66 mm height (max.) 400 μm pad pitch and 40 μm Sn solder depot on pads RoHS and WEEE compliant package 1.2 • • Application USB 2.0, 10/100/1000 Ethernet, Firewire, DVI, HDMI, S-ATA RF antenna protection e.g. GPS, FM radio, mobile TV 1.3 Description The BGF120A can be used for 2 lines uni-directional or 1 line bi-directional ESD and surge protection up to 20 kV contact discharge according to IEC61000-4-2. The capacitance of the device is less then 0.75 pF (max.) in bidirectional configuration and less than 1.5 pF (max.) in uni-directional configuration. Maximum reverse working voltage is 5.3 V (uni-directional) or ±5.3 V (bi-directional). The reverse leakage current is less than 1 nA (typ.). The leadless plastic package has 0.75 mm x 0.75 mm typical size and maximum height of 0.66 mm. The pads have 400 μm pitch and offer 40 μm Sn for high reliability soldering Pin 1 A1 A2 Pin 4 Pin 2 B1 B2 Pin 3 (a) Pin configuration (top view) A1 A2 B1 B2 (b) Schematic diagram BGF120 A_pin _configuration _schematic.vsd Figure 1-1 Pin Configuration and Schematic Diagram Type BGF120A Package TSLP-4-8 Configuration 2 lines, uni-directional Marking code 1) A 1) Or 1 line, bi-directional between A1 and A2, if B1, B2 are not connected Final Datasheet 4 Rev. 1.4, 2012-09-17 BGF120A Electrical Characteristics 2 Electrical Characteristics Table 2-1 Maximum Ratings TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. Operating temperature range TOP -40 - +125 °C Storage temperature range TSTG -65 - +150 °C VESD - - 18 kV 1) Contact discharge 1) VESD according to IEC61000-4-2 Note / Test Condition Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 2-2 DC Electrical Characteristics TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. Note / Test Condition Reverse working voltage VRWM - - 5.3 V Breakdown voltage VBR 6 - - V IBR = 1 mA Reverse current IR - <1 50 nA VR = 5.3V Table 2-3 DC Electrical Characteristics TA = 25 °C, unless otherwise specified Parameter Symbol 1) Line capacitance A1 or A2 to B1/B2 A1 to A2, B1/B2 n.c. CL Series inductance per diode LS Values Min. Typ. Max. - - 1.5 0.75 - 0.25 - Unit Note / Test Condition pF VR = 0 V, f = 1 MHz nH 1) Total capacitance line to ground Final Datasheet 5 Rev. 1.4, 2012-09-17 BGF120A Electrical Characteristics Table 2-4 ESD Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol 1) Reverse clamping voltage A1 or A2 vs B1, B2 A1 or A2 vs B1, B2 1) Forward clamping voltage A1 or A2 vs B1, B2 A1 or A2 vs B1, B2 1) Dynamic resistance positive pulse A1 or A2 vs. B1, B2 negative pulse A1 or A2 vs B1, B2 Values Unit Note / Test Condition Min. Typ. Max. - 22 - ITLP = 16 A, - 31 - ITLP = 30 A, V VCL V VFC - -14 - ITLP = -16 A, - -20 - ITLP = -30 A, - 0.7 0.5 - Ω RDYN 1) ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitive Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 Ω, tp = 100 ns, tr = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristic between IPP1 = 10 A and IPP2 = 30 A. Please refer to Application Note AN210[1]. Final Datasheet 6 Rev. 1.4, 2012-09-17 BGF120A Typical Characteristics 3 Typical Characteristics -3 10 10-4 -5 10 10-6 -7 IR [A] 10 10-8 -9 10 10-10 10 -11 10 -12 0 1 2 3 VR [V] 4 5 Figure 3-1 Reverse current IR = f(VR) 1.5 1.25 CL [pF] 1 0.75 0.5 0.25 0 0 0.5 1 1.5 2 2.5 3 3.5 VR [V] 4 4.5 5 5.5 6 Figure 3-2 Capacitance A1vs. B1, A2 vs. B2, CL(A1,B1) = CL(A2,B2) = f(VR) Final Datasheet 7 Rev. 1.4, 2012-09-17 BGF120A Typical Characteristics 70 Scope: 20 GS/s 60 50 VCL-max-peak = 62.5 [V] VCL [V] 40 VCL-30ns-peak = 18.6 [V] 30 20 10 0 -10 -100 0 100 200 300 400 tp [ns] 500 600 700 800 900 Figure 3-3 Clamping voltage at +8 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF) 10 Scope: 20 GS/s 0 -10 VCL [V] -20 -30 VCL-max-peak = -62.7 [V] -40 VCL-30ns-peak = -10.6 [V] -50 -60 -70 -100 0 100 200 300 400 tp [ns] 500 600 700 800 900 Figure 3-4 Clamping voltage at -8 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF) Final Datasheet 8 Rev. 1.4, 2012-09-17 BGF120A Typical Characteristics 120 Scope: 20 GS/s 100 VCL [V] 80 VCL-max-peak = 104.2 [V] 60 VCL-30ns-peak = 25.4 [V] 40 20 0 -20 -100 0 100 200 300 400 tp [ns] 500 600 700 800 900 Figure 3-5 Clamping voltage at +15 kV discharge according IEC61000-4-2 (R = 330 Ohm, C = 150 pF) 20 Scope: 20 GS/s 0 VCL [V] -20 -40 VCL-max-peak = -108.3 [V] -60 VCL-30ns-peak = -14.9 [V] -80 -100 -120 -100 0 100 200 300 400 tp [ns] 500 600 700 800 900 Figure 3-6 Clamping voltage at -15 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF) Final Datasheet 9 Rev. 1.4, 2012-09-17 BGF120A Typical Characteristics 35 20 BGF120A A1-B1 RDYN 17.5 30 15 RDYN = 0.67 Ω ITLP [A] 25 12.5 20 10 15 7.5 10 5 5 2.5 0 0 -5 -2.5 -10 -5 -15 -7.5 -20 -10 -25 RDYN = 0.45 Ω Equivalent VIEC [kV] 40 -12.5 -30 -15 -35 -17.5 -40 -20 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 VTLP [V] Figure 3-7 Clamping voltage (TLP): ITLP = f(VTLP) according ANSI/ESD STM5.5.1- Electrostatic Dischange Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 Ω, tp = 100 ns, tr = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using squares fit to ELP charactersistic between ITLP1 = 10 A and ITLP2 = 30 A. Please refer to Application Note AN210 [1] Final Datasheet 10 Rev. 1.4, 2012-09-17 BGF120A Application and Signal Routing 4 Application and Signal Routing Application example for high-speed data line protection (uni-directional) Connector This low parasitic capacitance dual channel TVS diode array can be used either in a 2 channel uni-directional configuration or in a single channel bi-directional configuration. Due to the low capacitance and low inductance the configurations are perfect fit for ultra high-speed interfaces, such as USB2.0/3.0, S-ATA, DVI or HDMI ports. Signal level: 0 … +5.3V A1 A2 B1 B2 ESD sensitive circuit The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible. Pin B1, B2 should be directly connected to a ground plane on the board. Figure 4-1 Application example for high-speed data line protection (uni-directional) Application example for RF antenna line (bi-directional) Connecting pin A1(A2) to the signal line and A2(A1) to GND and leaving pin B1/B2 floating even further reduces the parasitics to 0.75 pF only and correspondingly enable the user to add reliable ESD protection to RF antennas in e.g. GPS, FM radio or mobile TV applications without influence of the RF circuitry. Signal level: -5.3V … +5.3V A1 B1 A2 B2 ESD sensitive circuit Pin A1 (or A2) should be directly connected to the RF signal line and A2 (or A1) should be connected directly to a ground plane on the board. B1, B2 should be not connected. Figure 4-2 Application example for RF antenna line (bi-directional) Final Datasheet 11 Rev. 1.4, 2012-09-17 BGF120A Package Package Bottom view 0.6 +0.06 0.75 ±0.035 0.25 ±0.025 0.4 ±0.025 0.055 MAX. 1) 2 3 4 1 0.75 ±0.035 Top view 0.25 ±0.025 1) 5 0.4 ±0.025 Pin 1 marking 1) Dimension applies to plated terminals TSLP-4-8-PO V01 Figure 5-1 Package outline for TSLP-4-8 (dimension in mm) 0.4 0.4 0.25 TSLP-4-8-FP V01 Figure 5-2 Package footprint for TSLP-4-8 (dimension in mm) 4 Pin 1 marking 0.85 8 0.85 0.23 0.7 TSLP-4-8-TP V03 Figure 5-3 Tape and Reel Information for TSLP-4-8 (dimension in mm) Pin 1 marking Type code Figure 5-4 Marking (example) for TSLP-4-8 Final Datasheet 12 Rev. 1.4, 2012-09-17 BGF120A References References [1] Infineon Technologies AG, “Effective ESD Protection Design at System Level Using VF-TLP Characterization Methodology”, Application Note 210, RF and Protection Devices, April 22, 2010, Rev.1.0 [2] Infineon Technologies AG, “Recommendation for PCB Assembly of Infineon TSLP and TSSLP Packages”. Final Datasheet 13 Rev. 1.4, 2012-09-17 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG