SiA456DJ Datasheet

New Product
SiA456DJ
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)a
1.38 at VGS = 4.5 V
2.6
1.50 at VGS = 2.5 V
2.5
3.50 at VGS = 1.8 V
0.5
VDS (V)
200
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
Qg (Typ.)
5 nC
RoHS
COMPLIANT
APPLICATIONS
PowerPAK SC-70-6L-Single
• Boost Converter for Portable Devices
D
1
D
2
D
Marking Code
3
6
G
D
5
2.05 mm
S
G
AGX
Part # code
S
D
XXX
Lot Traceability
and Date code
2.05 mm
4
S
Ordering Information: SiA456DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Continuous Source-Drain Diode Current
Soldering Recommendations (Peak Temperature)
ID
d, e
IS
PD
TJ, Tstg
Limit
200
± 16
2.6
2.1
1.1b, c
0.9b, c
2
3.6
2.9b, c
19
12
3.5b, c
2.2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t≤5s
28
36
Maximum Junction-to-Ambientb, f
°C/W
RthJC
5.3
6.5
Maximum Junction-to-Case (Drain)
Steady State
Notes:
a. TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 80 °C/W.
Document Number: 68642
S-81952-Rev. B, 25-Aug-08
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1
New Product
SiA456DJ
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
200
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 16 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
265
ID = 250 µA
VGS(th) Temperature Coefficient
V
mV/°C
- 3.5
0.6
1.4
V
± 100
nA
VDS = 200 V, VGS = 0 V
1
VDS = 200 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 4.5 V
2
µA
A
VGS = 4.5 V, ID = 0.75 A
1.08
1.38
VGS = 2.5 V, ID = 0.5 A
1.12
1.5
VGS = 1.8 V, ID = 0.1 A
1.2
3.5
VDS = 4 V, ID = 0.75 A
5
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
350
VDS = 100 V, VGS = 0 V, f = 1 MHz
td(off)
tf
VDS = 100 V, VGS = 10 V, ID = 1.1 A
VDS = 100 V, VGS = 4.5 V, ID = 1.1 A
tr
tf
9.5
14.5
5
7.5
0.7
nC
1.7
f = 1 MHz
VDD = 100 V, RL = 111 Ω
ID ≅ 0.9 A, VGEN = 4.5 V, Rg = 1 Ω
td(on)
td(off)
pF
6
td(on)
tr
12
VDD = 100 V, RL = 111 Ω
ID ≅ 0.9 A, VGEN = 10 V, Rg = 1 Ω
Ω
2
10
15
25
40
30
45
20
30
5
10
20
30
16
25
12
20
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
3.6
2
IS = 0.9 A, VGS = 0 V
IF = 0.9 A, dI/dt = 100 A/µs, TJ = 25 °C
A
0.8
1.2
V
40
80
ns
40
80
nC
21
19
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68642
S-81952-Rev. B, 25-Aug-08
New Product
SiA456DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
2.0
TC = - 55 °C
VGS = 5 thru 2 V
0.8
I D - Drain Current (A)
I D - Drain Current (A)
1.6
1.2
0.8
TC = 25 °C
0.6
TC = 125 °C
0.4
0.2
0.4
VGS = 1 V
0.0
0.0
0.0
0
1
2
3
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
600
1.5
500
1.4
1.3
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
VDS - Drain-to-Source Voltage (V)
1.6
VGS = 1.8 V
1.2
VGS = 2.5 V
1.1
VGS = 4.5 V
1.0
400
Ciss
300
200
Crss
100
0.9
Coss
0.8
0.0
0
0.4
0.8
1.2
1.6
2.0
0
10
20
30
40
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
50
2.0
10
ID = 1.1 A
1.8
VDS = 100 V
VGS = 4.5 V, 2.5 V, ID = 0.75 A
VGS = 1.8 V, ID = 0.1 A
8
VDS = 160 V
6
4
1.6
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
0.5
1.4
1.2
1.0
0.8
2
0.6
0
0
2
Document Number: 68642
S-81952-Rev. B, 25-Aug-08
4
6
8
10
12
0.4
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
150
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New Product
SiA456DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
10
1
TJ = 150 °C
2.5
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 0.75 A
TJ = 25 °C
TJ = 125 °C
2.0
1.5
TJ = 25 °C
1.0
0.5
0.1
0.0
0.2
0.4
0.6
0.8
0
1.0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.4
30
1.3
25
20
1.1
Power (W)
V GS(th) (V)
1.2
ID = 250 µA
1.0
0.9
15
10
0.8
5
0.7
0.6
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
1
10
100
1000
Time (s)
Single Pulse Power (Junction-to-Ambient)
Threshold Voltage
10
I D - Drain Current (A)
Limited by RDS(on)*
100 µs
1
1 ms
0.1
10 ms
100 ms
1s
10 s
0.01
DC
TA = 25 °C
Single Pulse
0.001
0.1
1
BVDSS
Limited
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68642
S-81952-Rev. B, 25-Aug-08
New Product
SiA456DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
3.0
2.5
Power Dissipation (W)
I D - Drain Current (A)
15
2.0
1.5
1.0
10
5
0.5
0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68642
S-81952-Rev. B, 25-Aug-08
www.vishay.com
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New Product
SiA456DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68642.
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Document Number: 68642
S-81952-Rev. B, 25-Aug-08
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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11
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Revision: 02-Oct-12
1
Document Number: 91000