Si1553CDL www.vishay.com Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.390 at VGS = 4.5 V 0.7 VDS (V) N-Channel P-Channel 20 -20 0.510 at VGS = 2.7 V 0.5 0.578 at VGS = 2.5 V 0.5 0.850 at VGS = -4.5 V -0.5 1.350 at VGS = -2.7 V -0.5 1.480 at VGS = -2.5 V -0.3 Qg (TYP.) • 100 % Rg tested 0.55 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 0.95 APPLICATIONS • Load switch SOT-363 SC-70 Dual (6 leads) D1 6 • TrenchFET® power MOSFET • DC/DC converter S2 4 G2 5 D1 S2 G2 G1 1 S1 Top View 2 G1 3 D2 S1 D2 N-Channel MOSFET P-Channel MOSFET Marking Code: RH Ordering Information: Si1553CDL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL Drain-Source Voltage VDS 20 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) Source-Drain Current Diode Current -20 0.7 TC = 70 °C 0.6 -0.4 0.7 b, c -0.4 b, c TA = 70 °C 0.5 b, c -0.4 b, c TC = 25 °C 0.3 -0.3 0.2 b, c -0.2 b, c TA = 25 °C TA = 25 °C ID IS IDM TC = 25 °C TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range -0.5 2 -1 0.34 0.34 A 0.22 0.22 0.29 b, c 0.29 b, c 0.18 b, c 0.18 b, c TJ, Tstg UNIT V ± 12 TC = 25 °C Pulsed Drain Current (t = 300 μs) Maximum Power Dissipation P-CHANNEL -55 to 150 W °C THERMAL RESISTANCE RATINGS N-CHANNEL PARAMETER Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) P-CHANNEL SYMBOL TYP. MAX. TYP. MAX. t ≤ 10 s RthJA 365 438 365 438 Steady State RthJF 308 370 308 370 UNIT °C/W Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 486 °C/W (N-Channel) and 486 °C/W (P-Channel). S14-1130-Rev. B, 02-Jun-14 Document Number: 67693 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. a MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance b VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA N-Ch 20 - - VGS = 0 V, ID = -250 μA P-Ch -20 - - ID = 250 μA N-Ch - 24 - ID = -250 μA P-Ch - -13 - ID = 250 μA N-Ch - -1.8 - ID = -250 μA P-Ch - 2.3 - VDS = VGS, ID = 250 μA N-Ch 0.6 - 1.5 VDS = VGS, ID = -250 μA P-Ch -0.6 - -1.5 VDS = 0 V, VGS = ± 12 V N-Ch - - ± 100 P-Ch - - ± 100 VDS = 20 V, VGS = 0 V N-Ch - - 1 VDS = -20 V, VGS = 0 V P-Ch - - -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch - - 10 VDS = -20 V, VGS = 0 V, TJ = 55 °C P-Ch - - -10 VDS = 5 V, VGS = 5 V N-Ch 2 - - VDS = -5 V, VGS = -5 V P-Ch -1 - - VGS = 4.5 V, ID = 0.7 A N-Ch - 0.325 0.390 VGS = -4.5 V, ID = -0.4 A P-Ch - 0.708 0.850 VGS = 2.7 V, ID = 0.4 A N-Ch - 0.425 0.510 VGS = -2.7 V, ID = -0.2 A P-Ch - 1.130 1.350 VGS = 2.5 V, ID = 0.4 A N-Ch - 0.462 0.578 VGS = -2.5V, ID = -0.2 A P-Ch - 1.230 1.480 VDS = 15 V, ID = 0.7 A N-Ch - 1.5 - VDS = -15 V, ID = -0.5 A P-Ch - 0.8 - N-Ch - 38 - P-Ch - 43 - N-Ch - 14 - P-Ch - 16 - N-Ch - 6 - P-Ch - 10 - N-Ch - 1.2 1.8 P-Ch - 1.9 3 N-Ch - 0.55 1.1 V mV/°C V nA μA A Ω S Dynamic a Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz Coss Crss P-Channel VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 0.7 A Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance S14-1130-Rev. B, 02-Jun-14 Qg VDS = -10 V, VGS = -10 V, ID = -0.5 A N-Channel VDS = 10 V, VGS = 4.5 V ID = 0.5 A P-Ch - 0.95 1.5 N-Ch - 0.15 - P-Channel VDS = -10 V, VGS = -4.5 V, ID = -0.4 A P-Ch - 0.25 - N-Ch - 0.15 - Qgs Qgd Rg f = 1 MHz P-Ch - 0.25 - N-Ch 1.5 7.2 14.4 P-Ch 2.1 10.3 20.6 pF nC Ω Document Number: 67693 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Dynamic SYMBOL MIN. TYP. a MAX. N-Ch - 2 4 P-Ch - 2 4 N-Ch - 14 21 P-Ch - 9 18 N-Ch - 11 20 P-Ch - 10 20 N-Ch - 7 14 P-Ch - 7 14 N-Ch - 16 24 TEST CONDITIONS UNIT a Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) Fall Time Turn-On Delay Time P-Channel VDD = -10 V, RL = 25 Ω ID ≅ -0.4 A, VGEN = -10 V, Rg = 1 Ω tf td(on) Rise Time Turn-Off Delay Time N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 10 V, Rg = 1 Ω tr td(off) Fall Time N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 1 Ω P-Channel VDD = -10 V, RL = 25 Ω ID ≅ -0.4 A, VGEN = -4.5 V, Rg = 1 Ω tf P-Ch - 15 23 N-Ch - 22 33 P-Ch - 15 23 N-Ch - 22 33 P-Ch - 12 20 N-Ch - 13 20 P-Ch - 8 16 N-Ch - - 0.3 P-Ch - - -0.3 N-Ch - - 2 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current a ISM Body Diode Voltage TC = 25 °C VSD P-Ch - - -1 IS = 0.5 A N-Ch - 0.8 1.2 IS = -0.4 A P-Ch - -0.8 -1.2 N-Ch - 8 15 P-Ch - 12 20 Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 0.5 A, dI/dt = 100 A/μs, TJ = 25 °C N-Ch - 1 2 P-Ch - 5 10 Reverse Recovery Fall Time ta P-Channel IF = -0.4 A, dI/dt = -100 A/μs, TJ = 25 °C N-Ch - 4 - Reverse Recovery Rise Time tb P-Ch - 9 - N-Ch - 4 - P-Ch - 3 - A V ns nC ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1130-Rev. B, 02-Jun-14 Document Number: 67693 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.5 2 VGS = 5 V thru 3 V VGS = 2.5 V 0.4 ID - Drain Current (A) ID - Drain Current (A) 1.5 1 VGS = 2 V 0.3 TC = 25 °C 0.2 0.5 0.1 TC = 125 °C VGS = 1.5 V 0 0.5 1 1.5 0 2 1 1.5 2 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.7 50 0.6 40 VGS = 2.5 V 0.5 0.5 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = - 55 °C 0 0 VGS =2.7 V 0.4 VGS = 4.5 V Ciss 30 20 Coss 0.3 10 0.2 0 Crss 0 0.5 1 1.5 0 2 10 15 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.7 ID = 0.7 A RDS(on) - On-Resistance (Normalized) ID = 0.7 A VGS - Gate-to-Source Voltage (V) 5 ID - Drain Current (A) VDS = 10 V 8 6 VDS = 5 V 4 VDS = 16 V 2 0 0 0.3 0.6 0.9 1.2 1.5 VGS = 4.5 V 1.3 1.1 0.9 0.7 - 50 VGS = 2.7 V - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S14-1130-Rev. B, 02-Jun-14 150 Document Number: 67693 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 0.8 ID = 0.7 A RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.7 TJ = 150 °C 1 TJ = 25 °C 0.6 TJ = 125 °C 0.5 0.4 TJ = 25 °C 0.3 0.1 0.0 0.3 0.6 0.9 1.2 0.2 1.5 2 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 On-Resistance vs. Gate-to-Source Voltage 1.1 6.4 1 0.9 Power (W) VGS(th) (V) 4.8 ID = 250 μA 0.8 3.2 1.6 0.7 0.6 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 ID - Drain Current (A) Limited by RDS(on)* 1 100 μs 1 ms 10 ms 0.1 100 ms TC = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1s 10 s, DC 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-1130-Rev. B, 02-Jun-14 Document Number: 67693 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.8 ID - Drain Current (A) 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 0.45 0.32 0.36 0.27 Power (W) Power (W) 0.24 0.18 0.16 0.08 0.09 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-1130-Rev. B, 02-Jun-14 Document Number: 67693 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 486 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot S14-1130-Rev. B, 02-Jun-14 Document Number: 67693 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 0.2 VGS = 5 V thru 3 V VGS = 2.5 V 0.15 ID - Drain Current (A) ID - Drain Current (A) 0.8 0.6 0.4 VGS = 2 V 0.1 TC = 25 °C 0.05 0.2 TC = 125 °C VGS = 1.5 V 0 TC = - 55 °C 0 0 0.5 1 1.5 2 0 0.5 1 1.5 2 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.8 80 60 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.5 VGS = 2.5 V VGS = 2.7 V 1.2 0.9 VGS = 4.5 V Ciss 40 20 Coss 0.6 Crss 0.3 0 0 0.2 0.4 0.6 0.8 0 1 5 10 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 0.5 A 8 VDS = 10 V 6 VDS = 5 V 4 VDS = 16 V 2 1.4 VGS = 4.5 V 1.2 1.0 0.8 VGS = 2.7 V 0.6 0 0 0.5 1 1.5 2 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S14-1130-Rev. B, 02-Jun-14 150 Document Number: 67693 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 0.4 A TJ = 150 °C 1 TJ = 25 °C TJ = 25 °C 0.5 0.6 0.9 1.2 1.5 0 2 4 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.2 6.4 1.05 4.8 ID = 250 μA 0.9 0.75 0.6 - 50 TJ = 125 °C 1 0 0.3 Power (W) VGS(th) (V) 0.1 0.0 1.5 8 3.2 1.6 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 10 Limited by RDS(on)* ID - Drain Current (A) 1 1 ms 10 ms 0.1 100 ms 1s 10 s, DC 0.01 TC = 25 °C Single Pulse 0.001 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S14-1130-Rev. B, 02-Jun-14 Document Number: 67693 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.6 ID - Drain Current (A) 0.45 0.3 0.15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* 0.45 0.32 0.36 0.27 Power (W) Power (W) 0.24 0.18 0.16 0.08 0.09 0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S14-1130-Rev. B, 02-Jun-14 Document Number: 67693 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1553CDL www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 486 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67693. S14-1130-Rev. B, 02-Jun-14 Document Number: 67693 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SCĆ70: 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 Document Number: 71154 06-Jul-01 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 www.vishay.com 1 AN814 Vishay Siliconix Dual-Channel LITTLE FOOTR SC-70 6-Pin MOSFET Recommended Pad Pattern and Thermal Performance INTRODUCTION This technical note discusses the pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for dual-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 250 mA) need to be switched, either directly or by using a level shift configuration. Vishay provides these devices with a range of on-resistance specifications in 6-pin versions. The new 6-pin SC-70 package enables improved on-resistance values and enhanced thermal performance. PIN-OUT Figure 1 shows the pin-out description and Pin 1 identification for the dual-channel SC-70 device in the 6-pin configuration. SOT-363 SC-70 (6-LEADS) S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 applications for which this package is intended. For the 6-pin device, increasing the pad patterns yields a reduction in thermal resistance on the order of 20% when using a 1-inch square with full copper on both sides of the printed circuit board (PCB). EVALUATION BOARDS FOR THE DUAL SC70-6 The 6-pin SC-70 evaluation board (EVB) measures 0.6 inches by 0.5 inches. The copper pad traces are the same as described in the previous section, Basic Pad Patterns. The board allows interrogation from the outer pins to 6-pin DIP connections permitting test sockets to be used in evaluation testing. The thermal performance of the dual SC-70 has been measured on the EVB with the results shown below. The minimum recommended footprint on the evaluation board was compared with the industry standard 1-inch square FR4 PCB with copper on both sides of the board. THERMAL PERFORMANCE Top View FIGURE 1. For package dimensions see outline drawing SC-70 (6-Leads) (http://www.vishay.com/doc?71154) Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the dual SC-70 6-pin package measured as junction-to-foot thermal resistance is 300_C/W typical, 350_C/W maximum. The “foot” is the drain lead of the device as it connects with the body. Note that these numbers are somewhat higher than other LITTLE FOOT devices due to the limited thermal performance of the Alloy 42 lead-frame compared with a standard copper lead-frame. Junction-to-Ambient Thermal Resistance (dependent on PCB size) BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the 6-pin SC-70. This basic pad pattern is sufficient for the low-power Document Number: 71237 12-Dec-03 The typical RθJA for the dual 6-pin SC-70 is 400_C/W steady state. Maximum ratings are 460_C/W for the dual. All figures based on the 1-inch square FR4 test board. The following example shows how the thermal resistance impacts power dissipation for the dual 6-pin SC-70 package at two different ambient temperatures. www.vishay.com 1 AN814 Vishay Siliconix SC-70 (6-PIN) PD + Dual EVB Elevated Ambient 60 _C TJ(max) * TA Rq JA o o PD + 150 Co* 25 C 400 CńW PD + 312 mW PD + TJ(max) * TA Rq JA o o PD + 150 Co* 60 C 400 CńW PD + 225 mW NOTE: Although they are intended for low-power applications, devices in the 6-pin SC-70 will handle power dissipation in excess of 0.2 W. 400 Thermal Resistance (C/W) Room Ambient 25 _C 500 300 200 100 1” Square FR4 PCB 0 10-5 10-4 Testing LITTLE FOOT SC-70 (6-PIN) 1) Minimum recommended pad pattern (see Figure 2) on the EVB of 0.5 inches x 0.6 inches. 518_C/W 2) Industry standard 1” square PCB with maximum copper both sides. 413_C/W 2 10-2 10-1 1 10 100 1000 Time (Secs) To aid comparison further, Figure 2 illustrates the dual-channel SC-70 thermal performance on two different board sizes and two different pad patterns. The results display the thermal performance out to steady state. The measured steady state values of RθJA for the dual 6-pin SC-70 are as follows: www.vishay.com 10-3 FIGURE 2. Comparison of Dual SC70-6 on EVB and 1” Square FR4 PCB. The results show that if the board area can be increased and maximum copper traces are added, the thermal resistance reduction is limited to 20%. This fact confirms that the power dissipation is restricted with the package size and the Alloy 42 leadframe. ASSOCIATED DOCUMENT Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version, REcommended Pad Pattern and Thermal Performance, AN815, (http://www.vishay.com/doc?71334). Document Number: 71237 12-Dec-03 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 18 Document Number: 72602 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000