Transistors 2SA2084 Silicon PNP epitaxial planar type Unit: mm For general amplification 0.40+0.10 –0.05 ■ Features 0.16+0.10 –0.06 1.9±0.1 Unit Collector-base voltage (Emitter open) VCBO −300 V Collector-emitter voltage (Base open) VCEO −300 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −70 mA Peak collector current ICP −100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.4±0.2 2.90+0.20 –0.05 10˚ 1.1+0.2 –0.1 Rating 1.1+0.3 –0.1 Symbol 0 to 0.1 Parameter (0.65) 2 1 (0.95) (0.95) ■ Absolute Maximum Ratings Ta = 25°C 5˚ 1.50+0.25 –0.05 • High collector-emitter voltage (Base open) VCEO • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 2.8+0.2 –0.3 3 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 7N ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −300 V Emitter-base voltage (Collector open) VEBO IE = −1 µA, , IC = 0 −5 V hFE VCE = −10 V, IC = −5 mA 30 VCE(sat) IC = −10 mA, IB = −1 mA Forward current transfer ratio * Collector-emitter saturation voltage Collector output capacitance (Common base, input open circuited) Transition frequency Cob fT Conditions Min Typ Max Unit 150 − 0.6 V VCB = −10 V, IE = 0, f = 1 MHz 7 pF VCB = −10 V, IE = 10 mA, f = 200 MHz 50 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank P Q hFE 30 to 100 60 to 150 Publication date: January 2003 SJC00286AED 1 2SA2084 150 100 − 0.9 mA − 0.8 mA −60 − 0.7 mA −50 − 0.6 mA − 0.5 mA −40 − 0.4 mA −30 − 0.3 mA −20 − 0.2 mA 50 −10 0 20 40 60 80 100 120 140 160 − 0.1 mA −2 0 − 0.01 − 0.1 −1 Forward current transfer ratio hFE −25°C −10 Collector current IC (mA) −10 −100 Ta = 85°C −80 −40 −20 0 −12 0 −100 VCE = −10 V Ta = 85°C 80 25°C 60 −25°C 20 0 −1 −10 −100 Collector current IC (mA) SJC00286AED − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −1.2 −1.4 Base-emitter voltage VBE (V) Cob VCB 100 40 −25°C 25°C −60 hFE IC Ta = 85°C 25°C −8 120 IC / IB = 10 − 0.1 −6 VCE = −10 V Collector-emitter voltage VCE (V) VCE(sat) IC −1 −4 −120 −1 000 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) IB = −1.0 mA Ta = 25°C 200 0 2 IC VBE −70 Collector current IC (mA) Collector power dissipation PC (mW) IC VCE −80 Collector current IC (mA) PT Ta 250 100 f = 1 MHz Ta = 25°C 10 1 0 −10 −20 −30 Collector-base voltage VCB (V) −40 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL