Data Sheet

PMEG3010AESB
30 V, 1 A low VF MEGA Schottky barrier rectifier
8 January 2016
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
•
•
•
•
•
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 30 V
Low forward voltage, typical: VF = 415 mV
Low reverse current, typical: IR = 300 µA
Package height typ. 270 µm
3. Applications
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Low power consumption applications
Ultra high-speed switching
LED backlight for mobile application
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward
current
δ = 0.5 ; f = 20 kHz; Tsp ≤ 145 °C;
-
-
1
A
VR
reverse voltage
Tj = 25 °C
-
-
30
V
VF
forward voltage
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
-
415
480
mV
-
60
255
µA
-
300
1250
µA
square wave
Tj = 25 °C
IR
reverse current
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
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PMEG3010AESB
NXP Semiconductors
30 V, 1 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K
cathode[1]
2
A
anode
Simplified outline
Graphic symbol
1
1
2
2
sym001
Transparent top view
DSN1006-2 (SOD993)
[1]
The marking bar indicates the cathode.
6. Ordering information
Table 3.
Ordering information
Type number
PMEG3010AESB
Package
Name
Description
Version
DSN1006-2
DSN1006-2, leadless ultra small package; 2 terminals;
body 1.0 x 0.6 x 0.27 mm
SOD993
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG3010AESB
3A
PMEG3010AESB
Product data sheet
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30 V, 1 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
30
V
IF
forward current
Tsp ≤ 140 °C; δ = 1
-
1.4
A
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 115 °C;
-
1
A
-
1
A
[1]
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 145 °C;
square wave
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.25
-
4
A
IFSM
non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave
-
10
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
-
0.525
W
[3]
-
1
W
[1]
-
1.78
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
2
1 cm each.
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
PMEG3010AESB
Product data sheet
Min
Typ
Max
Unit
[1][2]
-
-
240
K/W
[1][3]
-
-
125
K/W
[1][4]
-
-
70
K/W
[5]
-
-
15
K/W
[2]
[3]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
[4]
[5]
1 cm each.
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Soldering point of anode tab.
2
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30 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-016800
103
Zth(j-a)
(K/W)
duty cycle =
1
0.5
102
0.25
0.1
10
0
0.75
0.33
0.2
0.05
0.02
0.01
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-016801
103
Zth(j-a)
(K/W)
duty cycle =
1
102
0.5
0.25
10
0.75
0.33
0.2
0.1
0.05
0
1
10-3
0.02
0.01
10-2
10-1
1
10
102
tp (s)
103
2
FR4 PCB, mounting pad for anode and cathode 1 cm each
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3010AESB
Product data sheet
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30 V, 1 A low VF MEGA Schottky barrier rectifier
102
aaa-016802
duty cycle =
1
Zth(j-a)
(K/W)
0.5
0.25
10
0.75
0.33
0.2
0.1
0.05
0
1
10-3
0.02
0.01
10-2
10-1
1
10
102
tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3010AESB
Product data sheet
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30 V, 1 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 10 mA; tp = 300 µs; δ = 0.02 ;
30
-
-
V
forward voltage
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
-
140
-
mV
-
200
-
mV
-
270
325
mV
-
300
-
mV
-
355
405
mV
-
380
-
mV
-
415
480
mV
VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C
-
13
-
µA
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3 ;
-
22
90
µA
-
60
255
µA
-
300
1250
µA
VR = 1 V; f = 1 MHz; Tj = 25 °C
-
86
-
pF
VR = 10 V; f = 1 MHz; Tj = 25 °C
-
32
-
pF
IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
-
3.5
-
ns
VF
Tj = 25 °C
Tj = 25 °C
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IR
reverse current
Tj = 25 °C
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
Cd
trr
diode capacitance
reverse recovery time
Tj = 25 °C
PMEG3010AESB
Product data sheet
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30 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-016291
10
IR
(A)
IF
(A)
1
aaa-016292
1
(1)
10-1
(2)
(3)
10-2
(1)
10-3
(2)
10-1
(3)
(4)
(5)
(4)
10-4
10-5
10-2
(5)
10-6
10-7
10-3
10-8
10-4
0.0
Fig. 4.
0.2
0.4
0.6
VF (V)
10-9
0.8
0
10
20
pulsed condition
(1) Tj = 150 °C
pulsed condition
(1) Tj = 150 °C
(2) Tj = 125 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(5) Tj = −40 °C
Forward current as a function of forward
voltage; typical values
Fig. 5.
aaa-016293
175
Cd
(pF)
150
VR (V)
30
Reverse current as a function of reverse
voltage; typical values
aaa-016853
0.6
(4)
PF(AV)
(W)
(3)
(2)
125
0.4
(1)
100
75
0.2
50
25
0
Fig. 6.
0
10
20
VR (V)
0.0
0.0
30
0.4
f = 1 MHz; Tamb = 25 °C
Tj = 150 °C
Diode capacitance as a function of reverse
voltage; typical values
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7.
PMEG3010AESB
Product data sheet
1.2
IF(AV) (A)
1.6
Average forward power dissipation as a
function of average forward current; typical
values
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30 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-016854
1.00
PR(AV)
(W)
(1)
IF(AV)
(A)
(1)
0.75
aaa-016855
1.5
(2)
(3)
(2)
1.0
0.50
(3)
(4)
0.5
(4)
0.25
0.00
0
10
20
VR (V)
0.0
30
Tj = 125 °C
Fig. 9.
aaa-016856
1.5
100
125
150
175
Tamb (°C)
Average forward current as a function of
ambient temperature; typical values
aaa-016857
(1)
IF(AV)
(A)
(2)
(2)
1.0
(3)
(3)
0.5
0.5
(4)
0.0
75
1.5
(1)
1.0
50
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Average reverse power dissipation as a
function of reverse voltage; typical values
IF(AV)
(A)
25
FR4 PCB, standard footprint
Tj = 150 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig. 8.
0
0
25
(4)
50
75
100
125
0.0
150
175
Tamb (°C)
FR4 PCB, mounting pad for anode and cathode 1
50
75
100
125
150
175
Tamb (°C)
Tj = 150 °C
cm each
Tj = 150 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
Product data sheet
25
Ceramic PCB, Al2O3, standard footprint
2
PMEG3010AESB
0
Fig. 11. Average forward current as a function of
ambient temperature; typical values
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30 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-016858
1.5
(1)
IF(AV)
(A)
(2)
1.0
(3)
0.5
(4)
0.0
0
25
50
75
100
125
150
175
Tsp (°C)
Tj = 150 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 12. Average forward current as a function of solder point temperature; typical values
PMEG3010AESB
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30 V, 1 A low VF MEGA Schottky barrier rectifier
11. Test information
IF
IR(meas)
time
IR
trr
006aad022
Fig. 13. Reverse recovery definition; step recovery
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 14. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
12. Package outline
0.30
0.24
0.65
0.55
1
0.03
max
0.26
0.24
0.65
1.05
0.95
0.26
0.24
Dimensions in mm
2
0.51
0.49
14-10-24
Fig. 15. Package outline DSN1006-2 (SOD993)
PMEG3010AESB
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30 V, 1 A low VF MEGA Schottky barrier rectifier
13. Soldering
SOD993
1.2
0.65
0.3
0.7 0.6 0.5
(2x) (2x) (2x)
0.8
0.2
0.25
(2x)
occupied area
solder resist
0.35
(2x)
solder lands
solder paste
0.45
(2x)
Dimensions in mm
15-02-20
15-03-05
sod993_fr
Fig. 16. Reflow soldering footprint for DSN1006-2 (SOD993)
14. Mounting
SOD993 is an ultra small Discretes Silicon No-leads (DSN) package allowing maximized
utilization of the package area for active silicon. Due to the special product design, NXP
investigated the board assembly process parameters. In order to have an optimum
soldering quality, NXP advises following the assembly recommendations explained in
AN11689.
PMEG3010AESB
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30 V, 1 A low VF MEGA Schottky barrier rectifier
15. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG3010AESB v.3
20160108
Product data sheet
-
PMEG3010AESB v.2
Modifications:
•
PMEG3010AESB v.2
20150618
Product data sheet
-
PMEG3010AESB v.1
PMEG3010AESB v.1
20150506
Preliminary data sheet
-
-
PMEG3010AESB
Product data sheet
Section added: 14. Mounting
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30 V, 1 A low VF MEGA Schottky barrier rectifier
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damages are based on tort (including negligence), warranty, breach of
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
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Please consult the most recently issued document before initiating or
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PMEG3010AESB
Product data sheet
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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Characteristics sections of this document is not warranted. Constant or
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30 V, 1 A low VF MEGA Schottky barrier rectifier
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16.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
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TrenchMOS, TriMedia and UCODE — are trademarks of NXP
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PMEG3010AESB
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 January 2016
© NXP Semiconductors N.V. 2016. All rights reserved
14 / 15
PMEG3010AESB
NXP Semiconductors
30 V, 1 A low VF MEGA Schottky barrier rectifier
17. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................3
10
Characteristics ....................................................... 6
11
Test information ................................................... 10
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Mounting ...............................................................11
15
Revision history ................................................... 12
16
16.1
16.2
16.3
16.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2016. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 January 2016
PMEG3010AESB
Product data sheet
All information provided in this document is subject to legal disclaimers.
8 January 2016
© NXP Semiconductors N.V. 2016. All rights reserved
15 / 15