TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B-02LRH ESD / Transient Protection Diode for Near Field Communication (NFC) ESD18VU1B-02LRH Data Sheet Revision 1.4, 2013-08-07 Final Power Management & Multimarket Edition 2013-08-07 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. 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ESD18VU1B-02LRH Revision History: Revision 1.3, 2013-06-26 Page or Item Subjects (major changes since previous revision) Revision 1.4, 2013-08-07 7 - 10 Figure 5) - Figure 9) updated Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. 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Last Trademarks Update 2010-06-09 Final Data Sheet 3 Revision 1.4, 2013-08-07 ESD18VU1B-02LRH ESD / Transient Protection Diode for Near Field Communication (NFC) 1 ESD / Transient Protection Diode for Near Field Communication (NFC) 1.1 Features • • • • • ESD / transient protection according to: – IEC61000-4-2 (ESD): ±15 kV air discharge, ±12 kV contact discharge – IEC61000-4-5 (surge): ±2 A (tp = 8 / 20 µs) AC working voltage up to ±18.5 V (VTRIG min = 20 V) Ultra-low capacitance: CL = 0.3 pF (typical) Small leadless plastic package, size 0402 Pb-free (RoHS compliant) and halogen free package 1.2 • Application Examples ESD Protection of RF signal lines in Near Field Communication (NFC) applications 1.3 Product Description Pin 1 marking (lasered) Pin 1 Pin 1 Pin 2 Pin 2 a) Pin configuration b) Schematic diagram P G-TS LP-2_Dual_Diode_S erie_P inConf_and_S chematicDiag. vsd Figure 1 Pin Configuration and Schematic Diagram Table 1 Ordering Information Type Package Configuration ESD18VU1B-02LRH TSLP-2-17 1 line, bi-directional Final Data Sheet 4 Marking code X Revision 1.4, 2013-08-07 ESD18VU1B-02LRH Characteristics 2 Characteristics Table 2 Maximum Rating at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. VESD – – ±15 kV VESD – – ±12 kV IPP – – ±2 A Operating temperature TOP -40 – 85 °C Storage temperature Tstg -55 – 150 °C ESD air discharge 1) ESD contact discharge 1) Peak pulse current (tp = 8 / 20 μs) 2) 1) VESD according to IEC61000-4-2 2) IPP according to IEC61000-4-5 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.1 Electrical Characteristics at TA = 25 °C, unless otherwise specified Figure 2 !"# Definitions of electrical characteristics Final Data Sheet 5 Revision 1.4, 2013-08-07 ESD18VU1B-02LRH Characteristics Table 3 AC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition AC working voltage VRWM – – 18.5 V Both directions AC trigger voltage VTRIG 20 – – V Both directions AC reverse current IR – – 30 nA VR = 18.5 V Both directions – Table 4 – 1 mA VR = 20 V Both directions Unit Note / Test Condition RF Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol 1) Line capacitance Serie inductance CL LS Values Min. Typ. Max. 0.15 0.3 0.6 pF VR = 0 V, f = 1 MHz 0.15 0.3 0.6 pF VR = 0 V, f = 1 GHz – 0.4 – nH 1) Total capacitance I/O to GND Table 5 ESD Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol 1) Clamping voltage Clamping voltage2) VCL VCL Values Min. Typ. Max. – 28 – – 34 – – 17 – Unit Note / Test Condition V ITLP = 16 A, tp = 100 ns ITLP = 25 A, tp = 100 ns V IPP = 1 A, tp = 8 / 20 μs Dynamic resistance1) RDYN – 0.6 – Ω 1)Please refer to Application Note AN210 [1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between ITLP1 = 5 A and ITLP2 = 30 A 2) IPP according to IEC61000-4-5 Final Data Sheet 6 Revision 1.4, 2013-08-07 ESD18VU1B-02LRH Characteristics Typical Characteristics at TA = 25 °C, unless otherwise specified 2.2 -3 10 10-4 10-5 10-6 IR [A] 10-7 10-8 10-9 Figure 3 10 -10 10 -11 10 -12 0 5 10 VR [V] 15 20 Reverse current: IR = f(VR) 0.6 0.5 CL [pF] 0.4 0.3 0.2 0.1 0 Figure 4 0 5 10 VR [V] 15 20 Line capacitance: CL = f(VR), f = 1 MHz Final Data Sheet 7 Revision 1.4, 2013-08-07 ESD18VU1B-02LRH Characteristics 30 15 ESD18VU1B-02LRH RDYN 25 12.5 20 10 15 7.5 10 5 5 2.5 0 0 -5 -2.5 -10 -5 -15 -7.5 Equivalent VIEC [kV] ITLP [A] RDYN = 0.65 Ω RDYN = 0.63 Ω -20 -10 -25 -12.5 -30 -15 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 VTLP [V] Figure 5 Clamping voltage (TLP): ITLP = f(VTLP) according ANSI/ESD STM5.5.1- Electrostatic Dischange Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 Ω, tp = 100 ns, tr = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using squares fit to ELP charactersistic between ITLP1 = 5 A and ITLP2 = 30 A. Please refer to Application Note AN210 [1] Final Data Sheet 8 Revision 1.4, 2013-08-07 ESD18VU1B-02LRH Characteristics 175 Scope: 6 GHz, 20 GS/s 150 125 VCL [V] 100 VCL-max-peak = 160 V 75 VCL-30ns-peak = 27 V 50 25 0 -25 -50 Figure 6 0 50 100 150 200 tp [ns] 250 300 350 400 450 IEC61000-4-2 VCL = f(t), 8 kV positiv pulse from pin 1 to pin 2 25 Scope: 6 GHz, 20 GS/s 0 -25 VCL [V] -50 -75 -100 VCL-max-peak = -159 V -125 VCL-30ns-peak = -23 V -150 -175 -50 Figure 7 0 50 100 150 200 tp [ns] 250 300 350 400 450 IEC61000-4-2 VCL = f(t), 8 kV negativ pulse from pin 1 to pin 2 Final Data Sheet 9 Revision 1.4, 2013-08-07 ESD18VU1B-02LRH Characteristics 250 Scope: 6 GHz, 20 GS/s 225 200 175 VCL [V] 150 VCL-max-peak = 222 V 125 VCL-30ns-peak = 32 V 100 75 50 25 0 -25 -50 Figure 8 0 50 100 150 200 tp [ns] 250 300 350 400 450 IEC61000-4-2 VCL = f(t), 15 kV positiv pulse from pin 1 to pin 2 25 Scope: 6 GHz, 20 GS/s 0 -25 -50 VCL [V] -75 -100 -125 -150 VCL-max-peak = -233 V -175 VCL-30ns-peak = -29 V -200 -225 -250 -50 Figure 9 0 50 100 150 200 tp [ns] 250 300 350 400 450 IEC61000-4-2 VCL = f(t), 15 kV negativ pulse from pin 1 to pin 2 Final Data Sheet 10 Revision 1.4, 2013-08-07 ESD18VU1B-02LRH Application Information Application Information Mobile phone differential antenna Interconnection top/bottom shell “external pads” Main PCB / Top shell RF=13. 56MHz signal vs . GND<+-18V p +V signal vs . -V signal <36V!!! TX+ NFC Mo dule T X/ RX sectio n Bottom shell loop + TXGND E MI- LP filter Antenna m atching RX Lo opan te nna ~ 1µH 3 GND loop- Ca p s sho uld b e hig h vo lta g e typ e to b e sa ve r e g a r d s the r e sid ua l E SD p e a k Mobile phone single ended antenna Interconnection top /bottom shell “external pads” Main PCB / Top shell Bottom shell RF=13. 56MHz signal vs . GND<+-18V p NFC Modul e TX/ RX sectio n TX+ loop TXGND RX E MI - LP filter Antenna m atching GND Ca p s sho uld b e hig h vo lta g e typ e to b e sa ve r e g a r d s the r e sid ua l E SD p e a k E S D18V_applic ation ex ample . v s d Figure 10 Bi-directional ESD / Transient protection for NFC Frontend [3] Final Data Sheet 11 Revision 1.4, 2013-08-07 ESD18VU1B-02LRH Ordering Information Scheme (Examples) 4 Ordering Information Scheme (Examples) ESD 0P1 RF - XX YY Package XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins) YY = Package family: LS = TSSLP LRH = TSLP For Radio Frequency Applications Line Capacitance C L in pF: (i.e.: 0P1 = 0.1pF) ESD 5V3 U n U - XX YY Package or Application XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins) YY = Package family: LS = TSSLP LRH = TSLP S = SOT363 U = SC74 XX = Application family: LC = Low Clamp HDMI Uni- / Bi-directional or Rail to Rail protection Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines) Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF) Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V) Figure 11 Ordering information scheme Final Data Sheet 12 Revision 1.4, 2013-08-07 ESD18VU1B-02LRH Package Information 5 Package Information 5.1 PG-TSLP-2-17 [2] Top view Bottom view 0.39 +0.01 -0.03 0.6 ±0.05 0.05 MAX. 1±0.05 0.65 ±0.05 2 0.25 ±0.035 1) 1 0.5 ±0.035 1) Cathode marking 1) Dimension applies to plated terminal TSLP 2 7 PO V02 0.45 Copper Solder mask 0.375 0.35 0.275 1 0.925 0.3 0.6 0.275 PG-TSLP-2-17: Package overview 0.35 Figure 12 Stencil apertures TSLP-2-7-FP V01 Figure 13 PG-TSLP-2-17: Footprint 0.5 1.16 Orientation marking Figure 14 8 4 0.76 TSLP-2-7-TP V03 PG-TSLP-2-17: Packing Type code 12 Cathode marking Figure 15 PG-TSLP-2-17: Marking (example) Final Data Sheet 13 Revision 1.4, 2013-08-07 ESD18VU1B-02LRH References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages [3] Infineon AG - Application Note AN244: Tailored ESD Protection for the NFC Frontend Final Data Sheet 14 Revision 1.4, 2013-08-07 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG