ESD18VU1B-02LRH Data Sheet (4.1 MB, EN)

TVS Diodes
Transient Voltage Suppressor Diodes
ESD18VU1B-02LRH
ESD / Transient Protection Diode for Near Field Communication (NFC)
ESD18VU1B-02LRH
Data Sheet
Revision 1.4, 2013-08-07
Final
Power Management & Multimarket
Edition 2013-08-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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ESD18VU1B-02LRH
Revision History: Revision 1.3, 2013-06-26
Page or Item
Subjects (major changes since previous revision)
Revision 1.4, 2013-08-07
7 - 10
Figure 5) - Figure 9) updated
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Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
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of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Final Data Sheet
3
Revision 1.4, 2013-08-07
ESD18VU1B-02LRH
ESD / Transient Protection Diode for Near Field Communication (NFC)
1
ESD / Transient Protection Diode for Near Field Communication
(NFC)
1.1
Features
•
•
•
•
•
ESD / transient protection according to:
– IEC61000-4-2 (ESD): ±15 kV air discharge, ±12 kV contact discharge
– IEC61000-4-5 (surge): ±2 A (tp = 8 / 20 µs)
AC working voltage up to ±18.5 V (VTRIG min = 20 V)
Ultra-low capacitance: CL = 0.3 pF (typical)
Small leadless plastic package, size 0402
Pb-free (RoHS compliant) and halogen free package
1.2
•
Application Examples
ESD Protection of RF signal lines in Near Field Communication (NFC) applications
1.3
Product Description
Pin 1 marking
(lasered)
Pin 1
Pin 1
Pin 2
Pin 2
a) Pin configuration
b) Schematic diagram
P G-TS LP-2_Dual_Diode_S erie_P inConf_and_S chematicDiag. vsd
Figure 1
Pin Configuration and Schematic Diagram
Table 1
Ordering Information
Type
Package
Configuration
ESD18VU1B-02LRH
TSLP-2-17
1 line, bi-directional
Final Data Sheet
4
Marking code
X
Revision 1.4, 2013-08-07
ESD18VU1B-02LRH
Characteristics
2
Characteristics
Table 2
Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
VESD
–
–
±15
kV
VESD
–
–
±12
kV
IPP
–
–
±2
A
Operating temperature
TOP
-40
–
85
°C
Storage temperature
Tstg
-55
–
150
°C
ESD air discharge
1)
ESD contact discharge
1)
Peak pulse current (tp = 8 / 20 μs)
2)
1) VESD according to IEC61000-4-2
2) IPP according to IEC61000-4-5
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.1
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Figure 2
!"#
Definitions of electrical characteristics
Final Data Sheet
5
Revision 1.4, 2013-08-07
ESD18VU1B-02LRH
Characteristics
Table 3
AC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
AC working voltage
VRWM
–
–
18.5
V
Both directions
AC trigger voltage
VTRIG
20
–
–
V
Both directions
AC reverse current
IR
–
–
30
nA
VR = 18.5 V
Both directions
–
Table 4
–
1
mA
VR = 20 V
Both directions
Unit
Note /
Test Condition
RF Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Line capacitance
Serie inductance
CL
LS
Values
Min.
Typ.
Max.
0.15
0.3
0.6
pF
VR = 0 V, f = 1 MHz
0.15
0.3
0.6
pF
VR = 0 V, f = 1 GHz
–
0.4
–
nH
1) Total capacitance I/O to GND
Table 5
ESD Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Clamping voltage
Clamping voltage2)
VCL
VCL
Values
Min.
Typ.
Max.
–
28
–
–
34
–
–
17
–
Unit
Note /
Test Condition
V
ITLP = 16 A,
tp = 100 ns
ITLP = 25 A,
tp = 100 ns
V
IPP = 1 A,
tp = 8 / 20 μs
Dynamic resistance1)
RDYN
–
0.6
–
Ω
1)Please refer to Application Note AN210 [1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window:
t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between
ITLP1 = 5 A and ITLP2 = 30 A
2) IPP according to IEC61000-4-5
Final Data Sheet
6
Revision 1.4, 2013-08-07
ESD18VU1B-02LRH
Characteristics
Typical Characteristics at TA = 25 °C, unless otherwise specified
2.2
-3
10
10-4
10-5
10-6
IR [A]
10-7
10-8
10-9
Figure 3
10
-10
10
-11
10
-12
0
5
10
VR [V]
15
20
Reverse current: IR = f(VR)
0.6
0.5
CL [pF]
0.4
0.3
0.2
0.1
0
Figure 4
0
5
10
VR [V]
15
20
Line capacitance: CL = f(VR), f = 1 MHz
Final Data Sheet
7
Revision 1.4, 2013-08-07
ESD18VU1B-02LRH
Characteristics
30
15
ESD18VU1B-02LRH
RDYN
25
12.5
20
10
15
7.5
10
5
5
2.5
0
0
-5
-2.5
-10
-5
-15
-7.5
Equivalent VIEC [kV]
ITLP [A]
RDYN = 0.65 Ω
RDYN = 0.63 Ω
-20
-10
-25
-12.5
-30
-15
-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40
VTLP [V]
Figure 5
Clamping voltage (TLP): ITLP = f(VTLP) according ANSI/ESD STM5.5.1- Electrostatic Dischange
Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 Ω,
tp = 100 ns, tr = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using squares fit to ELP charactersistic between ITLP1 = 5 A and
ITLP2 = 30 A. Please refer to Application Note AN210 [1]
Final Data Sheet
8
Revision 1.4, 2013-08-07
ESD18VU1B-02LRH
Characteristics
175
Scope: 6 GHz, 20 GS/s
150
125
VCL [V]
100
VCL-max-peak = 160 V
75
VCL-30ns-peak = 27 V
50
25
0
-25
-50
Figure 6
0
50
100
150
200
tp [ns]
250
300
350
400
450
IEC61000-4-2 VCL = f(t), 8 kV positiv pulse from pin 1 to pin 2
25
Scope: 6 GHz, 20 GS/s
0
-25
VCL [V]
-50
-75
-100
VCL-max-peak = -159 V
-125
VCL-30ns-peak = -23 V
-150
-175
-50
Figure 7
0
50
100
150
200
tp [ns]
250
300
350
400
450
IEC61000-4-2 VCL = f(t), 8 kV negativ pulse from pin 1 to pin 2
Final Data Sheet
9
Revision 1.4, 2013-08-07
ESD18VU1B-02LRH
Characteristics
250
Scope: 6 GHz, 20 GS/s
225
200
175
VCL [V]
150
VCL-max-peak = 222 V
125
VCL-30ns-peak = 32 V
100
75
50
25
0
-25
-50
Figure 8
0
50
100
150
200
tp [ns]
250
300
350
400
450
IEC61000-4-2 VCL = f(t), 15 kV positiv pulse from pin 1 to pin 2
25
Scope: 6 GHz, 20 GS/s
0
-25
-50
VCL [V]
-75
-100
-125
-150
VCL-max-peak = -233 V
-175
VCL-30ns-peak = -29 V
-200
-225
-250
-50
Figure 9
0
50
100
150
200
tp [ns]
250
300
350
400
450
IEC61000-4-2 VCL = f(t), 15 kV negativ pulse from pin 1 to pin 2
Final Data Sheet
10
Revision 1.4, 2013-08-07
ESD18VU1B-02LRH
Application Information
Application Information
Mobile phone
differential antenna
Interconnection
top/bottom shell
“external pads”
Main PCB / Top shell
RF=13. 56MHz
signal vs . GND<+-18V p
+V signal vs . -V signal <36V!!!
TX+
NFC Mo dule
T X/ RX sectio n
Bottom shell
loop +
TXGND
E MI- LP filter
Antenna
m atching
RX
Lo opan te nna
~ 1µH
3
GND
loop-
Ca p s sho uld b e hig h
vo lta g e typ e to b e sa ve
r e g a r d s the r e sid ua l
E SD p e a k
Mobile phone
single ended antenna
Interconnection
top /bottom shell
“external pads”
Main PCB / Top shell
Bottom shell
RF=13. 56MHz
signal vs . GND<+-18V p
NFC Modul e
TX/ RX sectio n
TX+
loop
TXGND
RX
E MI
- LP filter
Antenna
m atching
GND
Ca p s sho uld b e hig h
vo lta g e typ e to b e sa ve
r e g a r d s the r e sid ua l
E SD p e a k
E S D18V_applic ation ex ample . v s d
Figure 10
Bi-directional ESD / Transient protection for NFC Frontend [3]
Final Data Sheet
11
Revision 1.4, 2013-08-07
ESD18VU1B-02LRH
Ordering Information Scheme (Examples)
4
Ordering Information Scheme (Examples)
ESD
0P1
RF
- XX YY
Package
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
For Radio Frequency Applications
Line Capacitance C L in pF: (i.e.: 0P1 = 0.1pF)
ESD 5V3 U n U - XX YY
Package or Application
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
S = SOT363
U = SC74
XX = Application family:
LC = Low Clamp
HDMI
Uni- / Bi-directional or Rail to Rail protection
Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines)
Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF)
Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V)
Figure 11
Ordering information scheme
Final Data Sheet
12
Revision 1.4, 2013-08-07
ESD18VU1B-02LRH
Package Information
5
Package Information
5.1
PG-TSLP-2-17 [2]
Top view
Bottom view
0.39 +0.01
-0.03
0.6 ±0.05
0.05 MAX.
1±0.05
0.65 ±0.05
2
0.25 ±0.035 1)
1
0.5 ±0.035 1)
Cathode
marking
1) Dimension applies to plated terminal
TSLP 2 7 PO V02
0.45
Copper
Solder mask
0.375
0.35
0.275
1
0.925
0.3
0.6
0.275
PG-TSLP-2-17: Package overview
0.35
Figure 12
Stencil apertures
TSLP-2-7-FP V01
Figure 13
PG-TSLP-2-17: Footprint
0.5
1.16
Orientation
marking
Figure 14
8
4
0.76
TSLP-2-7-TP V03
PG-TSLP-2-17: Packing
Type code
12
Cathode marking
Figure 15
PG-TSLP-2-17: Marking (example)
Final Data Sheet
13
Revision 1.4, 2013-08-07
ESD18VU1B-02LRH
References
References
[1]
Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP
Characterization Methodology
[2]
Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages
[3]
Infineon AG - Application Note AN244: Tailored ESD Protection for the NFC Frontend
Final Data Sheet
14
Revision 1.4, 2013-08-07
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