Schottky Barrier Diodes (SBD) MA2J727 Silicon epitaxial planar type Unit: mm 0.7±0.1 1.25±0.1 For super high speed switching For small current rectification 0.35±0.1 1 1.7±0.1 2 0.5±0.1 0.16+0.1 –0.06 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 50 V VRRM 50 V IFM 300 mA Forward current (Average) IF(AV) 200 mA Non-repetitive peak forward surge current * IFSM 1 A Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Reverse voltage Repetitive peak reverse voltage Peak forward current (0.15) 0 to 0.1 5˚ 0.4±0.1 5˚ • VR = 50 V is guaranteed • IF(AV) = 200 mA rectification is possible 2.5±0.2 0 to 0.1 ■ Features 1: Anode 2: Cathode EIAJ: SC-76 SMini2-F1 Package Marking Symbol: 2F Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 200 µA IF = 30 mA 0.36 V IF = 200 mA 0.55 V Reverse current IR VR = 50 V Forward voltage VF1 VF2 Terminal capacitance Ct VR = 0 V, f = 1 MHz 30 pF Reverse recovery time * trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3.0 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 1 GHz. 4. *: trr measurement circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: October 2003 Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 SKH00136AED Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2J727 I F VF I R VR 103 VF Ta 105 0.5 Ta = 150°C IF = 200 mA 104 −20°C 100°C 10 25°C 1 10−1 10−2 0.4 103 100°C 102 25°C 0.1 0.2 0.3 0.4 0.5 1 0.6 0 Forward voltage VF (V) 10 20 30 40 50 60 IR Ta Ct VR 30 f = 1 MHz Ta = 25°C 25 Terminal capacitance Ct (pF) Reverse current IR (µA) 104 103 VR = 30 V 10 5V 2 10 1 −40 2 20 15 10 5 0 0 40 80 120 160 Ambient temperature Ta (°C) 200 0.2 30 mA 0 10 20 30 40 50 Reverse voltage VR (V) SKH00136AED 0 −40 0 40 80 120 160 Ambient temperature Ta (°C) Reverse voltage VR (V) 105 100 mA 0.3 0.1 10 0 Forward voltage VF (V) Ta = 150°C Reverse current IR (µA) Forward current IF (mA) 102 60 200 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP