Data Sheet

PMEG6010AESB
60 V, 1 A low VF MEGA Schottky barrier rectifier
1 September 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
•
•
•
•
•
Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 60 V
Low forward voltage, typical: VF = 525 mV
Low reverse current, typical: IR = 185 µA
Package height typ. 270 µm
3. Applications
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Low power consumption applications
Ultra high-speed switching
LED backlight for mobile application
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward
current
δ = 0.5 ; f = 20 kHz; Tsp ≤ 140 °C;
-
-
1
A
VR
reverse voltage
Tj = 25 °C
-
-
60
V
VF
forward voltage
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
-
525
625
mV
-
28
100
µA
-
185
650
µA
square wave
Tj = 25 °C
IR
reverse current
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
VR = 60 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
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60 V, 1 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K
cathode[1]
2
A
anode
Simplified outline
Graphic symbol
1
1
2
2
sym001
Transparent top view
DSN1006-2 (SOD993)
[1]
The marking bar indicates the cathode.
6. Ordering information
Table 3.
Ordering information
Type number
PMEG6010AESB
Package
Name
Description
Version
DSN1006-2
DSN1006-2, leadless ultra small package; 2 terminals;
body 1.0 x 0.6 x 0.27 mm
SOD993
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG6010AESB
6A
PMEG6010AESB
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60 V, 1 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
60
V
IF
forward current
Tsp ≤ 135 °C; δ = 1
-
1.4
A
IF(AV)
average forward current
δ = 0.5 ; f = 20 kHz; Tamb ≤ 95 °C;
-
1
A
-
1
A
[1]
square wave
δ = 0.5 ; f = 20 kHz; Tsp ≤ 140 °C;
square wave
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.25
-
4
A
IFSM
non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave
-
10
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
-
0.525
W
[3]
-
1
W
[1]
-
1.78
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
2
1 cm each.
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60 V, 1 A low VF MEGA Schottky barrier rectifier
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
Min
Typ
Max
Unit
[1][2]
-
-
240
K/W
[1][3]
-
-
125
K/W
[1][4]
-
-
70
K/W
[5]
-
-
15
K/W
[2]
[3]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
[4]
[5]
1 cm each.
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Soldering point of anode tab.
2
aaa-016800
103
Zth(j-a)
(K/W)
duty cycle =
1
102
0.5
0.25
0.1
10
0
1
10-3
0.75
0.33
0.2
0.05
0.02
0.01
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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60 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-016801
103
Zth(j-a)
(K/W)
duty cycle =
1
102
0.5
0.25
10
0.75
0.33
0.2
0.1
0.05
0.02
0.01
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
2
FR4 PCB, mounting pad for anode and cathode 1 cm each
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
aaa-016802
duty cycle =
1
Zth(j-a)
(K/W)
0.5
0.25
10
0.75
0.33
0.2
0.1
0.05
0
1
10-3
0.02
0.01
10-2
10-1
1
10
102
tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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60 V, 1 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 10 mA; tp = 300 µs; δ = 0.02 ;
60
-
-
V
forward voltage
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
-
145
-
mV
-
210
-
mV
-
285
340
mV
-
325
-
mV
-
410
480
mV
-
455
-
mV
-
525
625
mV
VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3 ; Tj = 25 °C
-
8
-
µA
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3 ;
-
12
45
µA
-
28
100
µA
-
185
650
µA
VR = 1 V; f = 1 MHz; Tj = 25 °C
-
57
-
pF
VR = 10 V; f = 1 MHz; Tj = 25 °C
-
20
-
pF
IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
-
2.4
-
ns
VF
Tj = 25 °C
Tj = 25 °C
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C
IR
reverse current
Tj = 25 °C
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
VR = 60 V; tp ≤ 3 ms; δ ≤ 0.3 ;
Tj = 25 °C
Cd
trr
diode capacitance
reverse recovery time
Tj = 25 °C
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60 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-019292
10
IR
(A)
IF
(A)
1
10-2
(1)
10-3
(1)
(2)
10-4
(2)
10-1
aaa-019293
10-1
(3) (4)
(5)
10-5
10-2
(3)
10-6
(4)
10-7
10-3
10-8
10-4
0.0
0.4
0.8
VF (V)
10-9
1.2
20
pulsed condition
(1) Tj = 150 °C
pulsed condition
(1) Tj = 125 °C
(2) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = 25 °C
(4) Tj = −40 °C
(5) Tj = −40 °C
Fig. 4.
0
Fig. 5.
aaa-019294
(4)
PF(AV)
(W)
80
60
aaa-019295
0.9
Cd
(pF)
VR (V)
Reverse current as a function of reverse
voltage; typical values
Forward current as a function of forward
voltage; typical values
120
40
(3)
0.6
(2)
(1)
40
0
Fig. 6.
0.3
0
20
40
VR (V)
0.0
0.0
60
f = 1 MHz; Tamb = 25 °C
Tj = 150 °C
Diode capacitance as a function of reverse
voltage; typical values
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7.
PMEG6010AESB
Product data sheet
1.0
IF(AV) (A)
1.5
Average forward power dissipation as a
function of average forward current; typical
values
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60 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-019296
1.00
aaa-019297
1.5
PR(AV)
(W)
IF(AV)
(A)
0.75
(1)
(2)
1.0
(1)
0.50
(2)
(3)
(3)
0.5
(4)
0.25
(4)
0.00
0
20
40
VR (V)
0.0
60
Tj = 150 °C
Average reverse power dissipation as a
function of reverse voltage; typical values
aaa-019298
1.5
Fig. 9.
100
125
150
175
Tamb (°C)
Average forward current as a function of
ambient temperature; typical values
aaa-019299
(1)
(2)
1.0
(3)
(3)
0.5
0.5
(4)
0.0
75
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
IF(AV)
(A)
(2)
1.0
50
1.5
(1)
IF(AV)
(A)
25
FR4 PCB, standard footprint
Tj = 150 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig. 8.
0
0
25
(4)
50
75
100
125
0.0
150
175
Tamb (°C)
FR4 PCB, mounting pad for anode and cathode
50
75
100
125
150
175
Tamb (°C)
Tj = 150 °C
1 cm each
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
Product data sheet
25
Ceramic PCB, Al2O3, standard footprint
2
PMEG6010AESB
0
Fig. 11. Average forward current as a function of
ambient temperature; typical values
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60 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-019300
1.5
(1)
IF(AV)
(A)
(2)
1.0
(3)
0.5
(4)
0.0
0
25
50
75
100
125
150
175
Tsp (°C)
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 12. Average forward current as a function of solder point temperature; typical values
11. Test information
IF
IR(meas)
time
IR
trr
006aad022
Fig. 13. Reverse recovery definition; step recovery
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 14. Duty cycle definition
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60 V, 1 A low VF MEGA Schottky barrier rectifier
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
12. Package outline
0.30
0.24
0.65
0.55
0.03
max
1
0.26
0.24
0.65
1.05
0.95
0.26
0.24
Dimensions in mm
2
0.51
0.49
14-10-24
Fig. 15. Package outline DSN1006-2 (SOD993)
13. Soldering
SOD993
1.2
0.65
0.3
0.7 0.6 0.5
(2x) (2x) (2x)
0.8
0.2
0.25
(2x)
occupied area
solder resist
0.35
(2x)
solder lands
solder paste
0.45
(2x)
Dimensions in mm
15-02-20
15-03-05
sod993_fr
Fig. 16. Reflow soldering footprint for DSN1006-2 (SOD993)
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60 V, 1 A low VF MEGA Schottky barrier rectifier
14. Mounting
SOD993 is an ultra small Discretes Silicon No-leads (DSN) package allowing maximized
utilization of the package area for active silicon. Due to the special product design, NXP
investigated the board assembly process parameters. In order to have an optimum
soldering quality, NXP advises following the assembly recommendations explained in
AN11689.
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15. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG6010AESB v.1
20150901
Product data sheet
-
-
PMEG6010AESB
Product data sheet
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Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
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Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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16.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
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1 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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PMEG6010AESB
NXP Semiconductors
60 V, 1 A low VF MEGA Schottky barrier rectifier
17. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 10
14
Mounting ...............................................................11
15
Revision history ................................................... 12
16
16.1
16.2
16.3
16.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 1 September 2015
PMEG6010AESB
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 September 2015
© NXP Semiconductors N.V. 2015. All rights reserved
15 / 15