Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D121
PRLL5817; PRLL5818; PRLL5819
Schottky barrier diodes
Product data sheet
Supersedes data of 1996 May 03
1999 Apr 22
NXP Semiconductors
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
Schottky barrier diodes
FEATURES
• Low switching losses
• Fast recovery time
• Guard ring protected
handbook, halfpage
• Hermetically sealed glass SMD
package.
k
a
MAM190
APPLICATIONS
• Low power, switched-mode power
supplies
• Rectifying
Fig.1 Simplified outline (SOD87) and symbol.
• Polarity protection.
DESCRIPTION
The PRLL5817 to PRLL5819 types
are Schottky barrier diodes fabricated
in planar technology, and
encapsulated in SOD87 hermetically
sealed glass SMD packages
incorporating ImplotecTM(1)
technology.
MARKING
TYPE NUMBER
PRLL5817
9
PRLL5818
9
PRLL5819
9
(1) Implotec is a trademark of Philips.
1999 Apr 22
MARKING CODE
2
NXP Semiconductors
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
Schottky barrier diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VR
VRSM
VRRM
VRWM
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
continuous reverse voltage
PRLL5817
−
20
V
PRLL5818
−
30
V
PRLL5819
−
40
V
PRLL5817
−
24
V
PRLL5818
−
36
V
PRLL5819
−
48
V
PRLL5817
−
20
V
PRLL5818
−
30
V
PRLL5819
−
40
V
PRLL5817
−
20
V
PRLL5818
−
30
V
non-repetitive peak reverse voltage
repetitive peak reverse voltage
crest working reverse voltage
−
40
V
IF(AV)
average forward current
Tamb = 60 °C
−
1
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj = Tj max prior to surge: VR = 0
−
25
A
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−
125
°C
PRLL5819
1999 Apr 22
3
NXP Semiconductors
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
TYP.
MAX.
UNIT
see Fig.2
−
−
320
mV
IF = 1 A
−
−
450
mV
IF = 3 A
−
−
750
mV
IF = 0.1 A
−
−
330
mV
IF = 1 A
−
−
550
mV
IF = 3 A
−
−
875
mV
IF = 0.1 A
−
−
340
mV
IF = 1 A
−
−
600
mV
IF = 3 A
−
−
900
mV
VR = VRRMmax; note 1
−
0.5
1
mA
VR = VRRMmax; Tj = 100 °C
−
5
10
mA
PRLL5817
−
70
−
pF
PRLL5818
−
50
−
pF
PRLL5819
−
50
−
pF
forward voltage
PRLL5818
VF
MIN.
IF = 0.1 A
PRLL5817
VF
CONDITIONS
forward voltage
PRLL5819
IR
reverse current
Cd
diode capacitance
see Fig.2
see Fig.2
VR = 4 V; f = 1 MHz
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
Note
1. Refer to SOD87 standard mounting conditions.
1999 Apr 22
4
VALUE
UNIT
150
K/W
NXP Semiconductors
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
Schottky barrier diodes
GRAPHICAL DATA
MBE634
5
handbook, halfpage
IF
(A)
Tj = 125 oC
4
25 oC
3
2
1
0
0
0.5
VF (V)
1
Fig.2 Typical forward voltage.
MBE642
1
a=3
2.5
2
1.57
1.42
1
PF(AV)
(W)
0.5
0
0
Fig.3
0.5
1
1.5
IF(AV) (A)
2
PRLL817. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
1999 Apr 22
5
NXP Semiconductors
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
Schottky barrier diodes
MBE641
1
a=3
2.5
2 1.57
1.42
1
PF(AV)
(W)
0.5
0
0
Fig.4
0.5
1.5
1
IF(AV) (A)
2
PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
MBE643
1
a=3
2.5
2 1.57
1.42
1
PF(AV)
(W)
0.5
0
0
Fig.5
0.5
1
1.5
IF(AV) (A)
2
PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
1999 Apr 22
6
NXP Semiconductors
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
Schottky barrier diodes
MBE635
200
MBE640
VRWM
VR
0.1
Tj
(oC)
VRWM
δ = 0.2
δ = 0.5
PR
(W)
δ = 0.2
100
VR
0.05
δ = 0.5
0
0
0
Fig.6
10
VR (V)
20
0
PRLL5817. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
Fig.7
10
VR (V)
PRLL5817. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
MBE636
200
MBE638
VRWM
VR
0.1
Tj
(oC)
20
δ = 0.2
δ = 0.5
VRWM
δ = 0.2
PR
(W)
100
VR
δ = 0.5
0.05
0
0
0
Fig.8
20
VR (V)
40
0
PRLL5818. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
1999 Apr 22
Fig.9
7
20
VR (V)
40
PRLL5818. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
NXP Semiconductors
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
Schottky barrier diodes
MBE637
200
MBE639
VRWM
VR
0.1
Tj
(oC)
δ = 0.5
δ = 0.2
VRWM
δ = 0.2
PR
(W)
100
VR
0.05
δ = 0.5
0
0
0
10
VR (V)
20
0
Fig.10 PRLL5819. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
1999 Apr 22
20
VR (V)
40
Fig.11 PRLL5819. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
8
NXP Semiconductors
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
Schottky barrier diodes
PACKAGE OUTLINE
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors
SOD87
k
a
(2)
D1
L
L
H
DIMENSIONS (mm are the original dimensions)
UNIT
D
D1
H
L
mm
2.1
2.0
2.0
1.8
3.7
3.3
0.3
D
0
1
2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
REFERENCES
OUTLINE
VERSION
IEC
SOD87
100H03
1999 Apr 22
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-03-31
99-06-04
9
NXP Semiconductors
Product data sheet
PRLL5817; PRLL5818;
PRLL5819
Schottky barrier diodes
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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above those given in the Characteristics sections of this
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extended periods may affect device reliability.
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Applications ⎯ Applications that are described herein for
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NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 22
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
115002/00/02/pp11
Date of release: 1999 Apr 22
Document order number: 9397 750 05474
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