Data Sheet

CF
P1
5
PMEG060V050EPD
60 V, 5 A low VF MEGA Schottky barrier rectifier
22 January 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a CFP15 (SOT1289) power
and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
Average forward current: IF(AV) ≤ 5 A
Reverse voltage: VR ≤ 60 V
Low forward voltage
High power capability due to clip-bonding technology and heat sink
Small and thin SMD power plastic package, typical height 0.78 mm
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Freewheeling application
Reverse polarity protection
Low power consumption application
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward
current
δ = 0.5; f = 20 kHz; Tsp ≤ 165 °C;
-
-
5
A
VR
reverse voltage
Tj = 25 °C
-
-
60
V
VF
forward voltage
IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02;
-
480
560
mV
-
10
30
µA
-
100
400
µA
square wave
Tj = 25 °C; pulsed
IR
reverse current
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 60 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
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60 V, 5 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
A
anode
2
A
anode
3
K
cathode
Simplified outline
Graphic symbol
K
1
3
A
A
aaa-009063
2
CFP15 (SOT1289)
6. Ordering information
Table 3.
Ordering information
Type number
PMEG060V050EPD
Package
Name
Description
Version
CFP15
plastic, thermal enhanced ultra thin SMD package; 3 leads;
body: 5.8 x 4.3 x 0.78 mm
SOT1289
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG060V050EPD
060V 050E
PMEG060V050EPD
Product data sheet
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60 V, 5 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
60
V
IF
forward current
Tsp = 160 °C; δ = 1
-
7
A
IF(AV)
average forward current
δ = 0.5; f = 20 kHz; Tsp ≤ 165 °C;
-
5
A
-
160
A
[1]
-
1.66
W
[2]
-
2.15
W
[3]
-
3.75
W
square wave
IFSM
non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
[1]
[2]
[3]
PMEG060V050EPD
Product data sheet
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
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60 V, 5 A low VF MEGA Schottky barrier rectifier
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
102
Max
Unit
[1][2]
-
-
90
K/W
[1][3]
-
-
70
K/W
[1][4]
-
-
40
K/W
[5]
-
-
3
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Soldering point of cathode tab.
aaa-015000
0.33
10
Typ
duty cycle = 1
0.75
Zth(j-a)
(K/W)
Min
0.2
0.5
0.25
0.1
0.05
0.02
1
0.01
10-1
10-3
0
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG060V050EPD
Product data sheet
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60 V, 5 A low VF MEGA Schottky barrier rectifier
aaa-015001
102
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.33
0.2
10
0.5
0.25
0.1
0.05
0.02
1
0.01
10-1
10-3
0
10-2
10-1
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-015002
102
duty cycle = 1
Zth(j-a)
(K/W)
0.75
10
0.33
0.2
0.5
0.25
0.1
0.05
1
0.02
0.01
10-1
10-3
0
10-2
10-1
1
10
102
tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG060V050EPD
Product data sheet
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60 V, 5 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 5 mA; Tj = 25 °C; tp ≤ 1.2 ms;
60
-
-
V
forward voltage
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
-
350
400
mV
-
390
-
mV
-
480
560
mV
-
435
-
mV
-
6
-
µA
-
10
30
µA
-
20
-
µA
-
100
400
µA
-
8
-
mA
VR = 1 V; f = 1 MHz; Tj = 25 °C
-
510
-
pF
VR = 10 V; f = 1 MHz; Tj = 25 °C
-
175
-
pF
reverse recovery time
step recovery
IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
-
17
-
ns
reverse recovery time
ramp recovery
dIF/dt = 200 A/µs; Tj = 25 °C; IF = 6 A;
-
12
-
ns
peak forward recovery
voltage
IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
-
335
-
mV
VF
δ ≤ 0.12; pulsed
Tj = 25 °C; pulsed
IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 125 °C; pulsed
IR
reverse current
VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C;
pulsed
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 30 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 60 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 25 °C; pulsed
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3;
Tj = 125 °C; pulsed
Cd
trr
trr
VFRM
diode capacitance
PMEG060V050EPD
Product data sheet
Tj = 25 °C
VR = 26 V
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60 V, 5 A low VF MEGA Schottky barrier rectifier
aaa-015003
102
IR
(A)
IF
(A)
10
10-2
10-3
(1)
(2)
(1)
10-4
(3)
(4)
1
aaa-015004
10-1
(2)
(3)
10-5
(4)
(5)
10-6
(5)
10-1
(6)
(7)
10-7
(6)
10-8
10-2
0
0.3
0.6
VF (V)
10-9
0.9
20
pulsed condition
(1) Tj = 175 °C
pulsed condition
(1) Tj = 150 °C
(2) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 125 °C
(3) Tj = 100 °C
(4) Tj = 100 °C
(4) Tj = 85 °C
(5) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = 25 °C
(6) Tj = −40 °C
(7) Tj = −40 °C
Fig. 4.
0
Fig. 5.
aaa-015005
aaa-015006
4
Cd
(nF)
(5)
PF(AV)
(W)
0.8
60
VR (V)
Reverse current as a function of reverse
voltage; typical values
Forward current as a function of forward
voltage; typical values
1.0
40
(4)
(3)
3
0.6
(2)
(1)
2
0.4
1
0.2
0
Fig. 6.
0
20
40
VR (V)
0
60
0
2
f = 1 MHz; Tamb = 25 °C
Tj = 100 °C
Diode capacitance as a function of reverse
voltage; typical values
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 0.8
(5) δ = 1
Fig. 7.
PMEG060V050EPD
Product data sheet
6
IF(AV) (A)
8
Average forward power dissipation as a
function of average forward current; typical
values
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60 V, 5 A low VF MEGA Schottky barrier rectifier
aaa-015007
0.8
aaa-015008
8
PR(AV)
(W)
IF(AV)
(A)
(1)
0.6
6
(2)
(1)
0.4
(2)
4
(3)
(3)
(4)
0.2
2
(4)
(5)
0
0
20
40
VR (V)
0
60
Tj = 100 °C
Fig. 9.
aaa-015009
8
150
200
Tamb (°C)
Average forward current as a function of
ambient temperature; typical values
aaa-015010
8
IF(AV)
(A)
IF(AV)
(A)
(1)
(1)
6
(2)
(2)
4
4
(3)
2
0
100
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Average reverse power dissipation as a
function of reverse voltage; typical values
6
50
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
(5) δ = 0.2
Fig. 8.
0
(3)
2
(4)
0
50
100
0
150
200
Tamb (°C)
FR4 PCB, mounting pad for cathode 1 cm
Tj = 175 °C
Product data sheet
50
100
150
200
Tamb (°C)
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
PMEG060V050EPD
0
Ceramic PCB, Al2O3, standard footprint
2
Fig. 10. Average forward current as a function of
ambient temperature; typical values
(4)
Fig. 11. Average forward current as a function of
ambient temperature; typical values
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60 V, 5 A low VF MEGA Schottky barrier rectifier
aaa-015011
8
IF(AV)
(A)
(1)
6
(2)
4
(3)
2
0
(4)
0
50
100
150
Tsp (°C)
200
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 12. Average forward current as a function of solder point temperature; typical values
11. Test information
IF
IR(meas)
time
IR
trr
006aad022
Fig. 13. Reverse recovery definition; step recovery
PMEG060V050EPD
Product data sheet
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60 V, 5 A low VF MEGA Schottky barrier rectifier
IF
dlF
dt
trr
time
25 %
100 %
Qr
IR
IRM
003aac562
Fig. 14. Reverse recovery definition; ramp recovery
IF
time
VF
VFRM
VF
time
001aab912
Fig. 15. Forward recovery definition
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 16. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
PMEG060V050EPD
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60 V, 5 A low VF MEGA Schottky barrier rectifier
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
4.4
4.2
2.13
1.3
1.1
0.45
0.25
2
4.8
4.4
0.82
0.74
1.3
0.9
1
5.9
5.7
4.2
3.8
0.45
0.25
3
2.15
1.95
0.24
0.16
3.5
3.1
Dimensions in mm
6.6
6.4
14-10-13
Fig. 17. Package outline CFP15 (SOT1289)
13. Soldering
Footprint information for reflow soldering of CFP15 package
SOT1289
4.6
3.73
1.4 (2×)
1.8 (2×)
1.6 (2×)
2.13
1.64 1.44 1.34
0.6 0.4
0.11
1.9
7.5
1.02
5.16 4.96
0.2
1.9
occupied area
solder resist
solder lands
solder paste
Issue date
13-08-28
14-03-12
0.2
0.05
0.6
1.7 (4×)
0.2
2.4
3.8
4
Dimensions in mm
sot1289_fr
Fig. 18. Reflow soldering footprint for CFP15 (SOT1289)
PMEG060V050EPD
Product data sheet
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60 V, 5 A low VF MEGA Schottky barrier rectifier
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG060V050EPD
v.1
20150122
Product data sheet
-
-
PMEG060V050EPD
Product data sheet
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60 V, 5 A low VF MEGA Schottky barrier rectifier
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
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PMEG060V050EPD
Product data sheet
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product data given in the Limiting values and Characteristics sections of this
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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60 V, 5 A low VF MEGA Schottky barrier rectifier
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMEG060V050EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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PMEG060V050EPD
NXP Semiconductors
60 V, 5 A low VF MEGA Schottky barrier rectifier
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
11.1
Test information ..................................................... 9
Quality information ............................................. 11
12
Package outline ................................................... 11
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 January 2015
PMEG060V050EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
15 / 15
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