ESD204-B1-02EL Data Sheet (1.3 MB, EN)

TVS Diodes
Transient Voltage Suppressor Diodes
ESD204-B1-02 Series
Bi-directional Low Capacitance TVS Diode
ESD204-B1-02ELS
ESD204-B1-02EL
Data Sheet
Revision 1.2, 2013-05-17
Final
Power Management & Multimarket
Edition 2013-05-17
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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ESD204-B1-02 Series
Revision History: Rev. 1.1, 2013-02-06
Page or Item
Subjects (major changes since previous revision)
Revision 1.2, 2013-05-17
New type ESD204-B1-02EL inserted
Trademarks of Infineon Technologies AG
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ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
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Other Trademarks
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Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Final Data Sheet
3
Revision 1.2, 2013-05-17
ESD204-B1-02 Series
Bi-directional Low Capacitance TVS Diode
1
Bi-directional Low Capacitance TVS Diode
1.1
Features
•
•
•
•
ESD / Transient protection of data lines in 3.3 / 5 / 12 V applications according to :
– IEC61000-4-2 (ESD) : ±20 kV (air) and ±18 kV (contact)
– IEC61000-4-4 (EFT) : ±40 A (5/50ns)
Maximum working voltage: VRWM = -8 / +14 V
Very low reverse current: IR < 1 nA (typical)
Low capacitance CL = 4 pF I/O to GND (typical)
1.2
•
•
•
Application Examples
Keypad, touchpad, buttons, convenience keys
LCD displays, Camera, audio lines, mobile communication, Consumer products (E-Book, MP3, DVD, DSC, ...)
Notebooks tablets and desktop computers and their peripherals
1.3
Product Description
Pin 1 marking
(lasered)
Pin 1
Pin 1
Pin 2
Pin 2
a) Pin configuration
b) Schematic diagram
P G-TS LP-2_Dual_Diode_S erie_P inConf_and_S chematicDiag. vsd
Figure 1
a) Pin Configuration and b) Schematic Diagram
Table 1
Ordering information
Type
Package
Configuration
Marking code
ESD204-B1-02ELS
TSSLP-2-3
1 line, bi-directional
D
ESD204-B1-02EL1)
TSLP-2-19
1 line, bi-directional
RR
1) Product not avialalble yet, target data
Final Data Sheet
4
Revision 1.2, 2013-05-17
ESD204-B1-02 Series
Characteristics
2
Characteristics
Table 2
Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
VESD
-20
–
20
kV
VESD
-18
–
18
kV
IPP
-1
–
1
A
Operating temperature
TOP
-55
–
150
°C
Storage temperage
1) VESD according to IEC61000-4-2
2) IPP according to IEC61000-4-5
Tstg
-65
–
150
°C
ESD air discharge
1)
ESD contact discharge
1)
Peak pulse current (tp = 8/20 µs)
2)
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.1
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Figure 2
!
!
!
Definitions of electrical characteristics
Final Data Sheet
5
Revision 1.2, 2013-05-17
ESD204-B1-02 Series
Characteristics
Table 3
DC characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Reverse working voltage VRWM
Breakdown voltage
VBR
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
-8
–
14
V
from Pin2 to Pin1
8.5
11
14
V
IR = 1 mA,
from Pin1 to Pin2
Breakdown voltage
VBR
14.5
17
20
V
IR = 1 mA,
from Pin2 to Pin1
IR
Reverse current
Table 4
–
<1
50
nA
VR = 3.3 V
Unit
Note /
Test Condition
RF characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Line capacitance
CL
–
4
7
pF
VR = 0 V, f = 1 MHz,
I/O to GND
Serie inductance
LS
–
–
0.2
0.4
–
–
nH
ESD204-B1-02ELS
ESD204-B1-02EL
Unit
Note /
Test Condition
V
IPP = 1 A
Table 5
ESD characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Clamping voltage
VCL
Values
Min.
Typ.
Max.
–
17
22
from Pin1 to Pin2
VCL
–
23
28
V
IPP = 1 A
from Pin2 to Pin1
1) According to IEC61000-4-5 (tp : 8 / 20 µs)
Final Data Sheet
6
Revision 1.2, 2013-05-17
ESD204-B1-02 Series
Characteristics
2.2
Typical Performance characteristics at TA = 25 °C, unless otherwise specified
3
10
D=0
D=0.005
D=0.01
2
10
Ppk [W]
D=0.02
D=0.05
D=0.1
1
10
D=0.2
D=0.5
100
10-8 10-7 10-6 10-5 10-4 10-3 10-2 10-1
tp [s]
Figure 3
100
Non-repetitive peak pulse power: Ppk = f (tp)
110
100
90
Ppk or IPP [%]
80
70
60
50
40
30
20
10
0
0
Figure 4
25
50
75
TA [°C]
100
125
150
Power derating curve: Ppk = f (TA)
Final Data Sheet
7
Revision 1.2, 2013-05-17
ESD204-B1-02 Series
Characteristics
10-8
TA=85°C
-9
IR [A]
10
TA=25°C
-10
10
10-11
0
Figure 5
2
4
6
8
VR [V]
10
12
14
Reverse characteristic, IR = (VR), TA = parameter
7
6
CL [pF]
5
4
3
2
1
0
0
Figure 6
2
4
6
8
VR [V]
10
12
14
Line capacitance CL = f(VR)
Final Data Sheet
8
Revision 1.2, 2013-05-17
ESD204-B1-02 Series
Application Information
Application Information
Connector
3
Protected data line with signal levels
-8V up to +14V (bi-directional )
I/ O
2
1
Figure 7
ESD
sensitive
device
The protection diode should be placed very
close to the location where the ESD or other
transients can occur to keep loops and
inductances as small as possible .
Pin 1 should be connected directly to a
ground plane on the board .
1 Line, bi-directional protection with ESD diode
Final Data Sheet
9
Revision 1.2, 2013-05-17
ESD204-B1-02 Series
Package Information
4
Package Information
4.1
TSSLP-2-3
Top view
Bottom view
0.31 +0.01
-0.02
0.32 ±0.05
0.355
0.62 ±0.05
2
Cathode
marking
0.05 MAX.
0.26 ±0.035
0.2 ±0.035 1)
1
1)
1) Dimension applies to plated terminals
TSSLP-2-3, -4-PO V01
TSSLP-2-3: Package Overview
0.19
0.24
Solder mask
0.19
0.57
0.62
Copper
0.19
0.27
0.14
0.32
0.24
Figure 8
Stencil apertures
TSSLP-2-3, -4-FP V02
Figure 9
TSSLP-2-3 Footprint
0.35
4
8
Ey
Tape type
Ex Ey
Punched Tape
0.43 0.73
Embossed Tape 0.37 0.67
Deliveries can be both tape types (no selection possible).
Specification allows identical processing (pick & place) by users.
Cathode
marking
Figure 10
Ex
TSSLP-2-3, -4-TP V03
TSSLP-2-3: Packing
1
Type code
Cathode marking
TSSLP-2-3, -4-MK V01
Figure 11
TSSLP-2-3: Marking (example)
Final Data Sheet
10
Revision 1.2, 2013-05-17
ESD204-B1-02 Series
Package Information
4.2
TSLP-2-19
Top view
Bottom view
0.31 +0.01
-0.02
0.6 ±0.05
0.05 MAX.
1±0.05
0.65 ±0.05
2
0.25 ±0.035 1)
1
0.5 ±0.035 1)
Cathode
marking
1) Dimension applies to plated terminals
TSLP-2-19, -20-PO V01
TSLP-2-19: Package Overview
0.35
0.28
0.38
0.93
1
Copper
0.28
0.45
0.3
0.6
0.35
Figure 12
Solder mask
Stencil apertures
TSLP-2-19, -20-FP V01
Figure 13
TSLP-2-19: Footprint
0.4
1.16
Cathode
marking
8
4
0.76
TSLP-2-19, -20-TP V02
Figure 14
TSLP-2-19: Packing
Type code
12
Cathode marking
TSLP-2-19, -20-MK V01
Figure 15
TSLP-2-19: Marking (example)
Final Data Sheet
11
Revision 1.2, 2013-05-17
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Published by Infineon Technologies AG
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