Data Sheet

BAP63-02
Silicon PIN diode
Rev. 04 — 8 January 2008
Product data sheet
IMPORTANT NOTICE
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NXP Semiconductors
NXP Semiconductors
Product specification
Silicon PIN diode
BAP63-02
FEATURES
PINNING
• High speed switching for RF signals
PIN
• Low diode capacitance
• Low diode forward resistance
• Very low series inductance
• For applications up to 3 GHz.
handbook, halfpage
APPLICATIONS
• RF attenuators and switches.
DESCRIPTION
1
cathode
2
anode
1
2
Top view
DESCRIPTION
MAM405
Marking code: K5.
Planar PIN diode in a SOD523 ultra small SMD plastic
package.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR
continuous reverse voltage
IF
continuous forward current
Ptot
total power dissipation
Tstg
Tj
CONDITIONS
MIN.
−
MAX.
50
UNIT
V
−
100
mA
−
715
mW
storage temperature
−65
+150
°C
junction temperature
−65
+150
°C
Ts ≤ 90 °C
Rev. 04 - 8 January 2008
2 of 7
NXP Semiconductors
Product specification
Silicon PIN diode
BAP63-02
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 50 mA
0.95
1.1
V
IR
reverse leakage current
VR = 35 V
−
10
nA
Cd
diode capacitance
VR = 0; f = 1 MHz
0.36
−
pF
VR = 1 V; f = 1 MHz
0.32
−
pF
VR = 20 V; f = 1 MHz
0.25
0.32
pF
IF = 0.5 mA; f = 100 MHz; note 1
2.5
3.5
Ω
rD
|s21|2
|s21|2
|s21|2
|s21|2
|s21|2
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
IF = 1 mA; f = 100 MHz; note 1
1.95
3
Ω
IF = 10 mA; f = 100 MHz; note 1
1.17
1.8
Ω
IF = 100 mA; f = 100 MHz; note 1 0.9
1.5
Ω
VR = 0; f = 900 MHz
15.6
−
dB
VR = 0; f = 1800 MHz
10.3
−
dB
VR = 0; f = 2450 MHz
8.3
−
dB
IF = 0.5 mA; f = 900 MHz
0.19
−
dB
IF = 0.5 mA; f = 1800 MHz
0.24
−
dB
IF = 0.5 mA; f = 2450 MHz
0.28
−
dB
IF = 1 mA; f = 900 MHz
0.16
−
dB
IF = 1 mA; f = 1800 MHz
0.20
−
dB
IF = 1 mA; f = 2450 MHz
0.25
−
dB
IF = 10 mA; f = 900 MHz
0.10
−
dB
IF = 10 mA; f = 1800 MHz
0.16
−
dB
IF = 10 mA; f = 2450 MHz
0.20
−
dB
IF = 100 mA; f = 900 MHz
0.09
−
dB
IF = 100 mA; f = 1800 MHz
0.14
−
dB
IF = 100 mA; f = 2450 MHz
0.18
−
dB
τL
charge carrier life time
when switched from IF = 10 mA to 310
IR = 6 mA; RL = 100 Ω;
measured at IR = 3 mA
−
ns
LS
series inductance
IF = 100 mA; f = 100 MHz
−
nH
0.6
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
Rev. 04 - 8 January 2008
VALUE
UNIT
85
K/W
3 of 7
NXP Semiconductors
Product specification
Silicon PIN diode
BAP63-02
GRAPHICAL DATA
MGW126
10
MGW127
400
handbook, halfpage
handbook, halfpage
Cd
(fF)
rD
(Ω)
300
1
200
100
10 −1
10 −1
1
10
I F (mA)
0
4
8
12
f = 1 MHz; Tj = 25 °C.
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
MGW128
0
MGW129
0
handbook, halfpage
2
| s 21|
handbook, halfpage
2
| s 21|
(1)
(dB)
−0.1
20
16
VR (V)
f = 100 MHz; Tj = 25 °C.
Fig.2
0
102
(dB)
−10
(2)
(3)
−0.2
(4)
−20
−0.3
−30
−0.4
−0.5
0
1
(1) IF = 100 mA.
(2) IF = 10 mA.
2
f (GHz)
3
0
1
2
f (GHz)
3
(3) IF = 1 mA.
(4) IF = 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb = 25 °C.
Fig.4
−40
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb = 25 °C.
Insertion loss (|s21|2) of the diode in on-state
as a function of frequency; typical values.
Fig.5
Rev. 04 - 8 January 2008
Isolation (|s21|2) of the diode in off-state as a
function of frequency; typical values.
4 of 7
NXP Semiconductors
Product specification
Silicon PIN diode
BAP63-02
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD523
A
c
v M A
HE
A
D
1
E
0
0.5
1 mm
scale
2
DIMENSIONS (mm are the original dimensions)
bp
(1)
UNIT
A
bp
c
D
E
HE
v
mm
0.65
0.58
0.34
0.26
0.17
0.11
1.25
1.15
0.85
0.75
1.65
1.55
0.1
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
JEITA
SC-79
Rev. 04 - 8 January 2008
EUROPEAN
PROJECTION
ISSUE DATE
02-12-13
06-03-16
5 of 7
BAP63-02
NXP Semiconductors
Silicon PIN diode
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
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authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
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or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
Rev. 04 - 8 January 2008
6 of 7
BAP63-02
NXP Semiconductors
Silicon PIN diode
Revision history
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BAP63-02_N_4
20080108
Product data sheet
-
BAP63-02_3
Modifications:
•
Package outline drawing on page 5 changed
BAP63-02_3
(9397 750 08261)
20010518
Product specification
-
BAP63-02_N_2
BAP63-02_N_2
(9397 750 08141)
20010320
Preliminary specification
-
BAP63-02_N_1
BAP63-02_N_1
(9397 750 08051)
20010220
Preliminary specification
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 January 2008
Document identifier: BAP63-02_N_4
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