ESD206-B1-02EL Data Sheet (845 KB, EN)

TVS Diode
Transient Voltage Suppressor Diodes
ESD206-B1-02 Series
Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode
ESD206-B1-02ELS
ESD206-B1-02EL
Data Sheet
Revision 1.5, 2013-12-19
Final
Power Management & Multimarket
ESD206-B1-02 Series
Revision History, Rev 1.4, 2013-11-26
Page or Item
Subjects (major changes since previous revision)
Revision 1.5, 2013-12-19
5
Update of Table 2-2)
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Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Final Data Sheet
2
Revision 1.5, 2013-12-19
ESD206-B1-02 Series
Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode
1
Ultra Low Clamping Bi-directional ESD / Transient / Surge
Protection Diode
1.1
Features
•
•
•
•
•
•
•
ESD/Transient/Surge protection of one data / Vbus line exceeding standard:
– IEC61000-4-2 (ESD): ±30 kV (air/contact discharge)
– IEC61000-4-4 (EFT): ±50 A (5/50 ns)
– IEC61000-4-5 (surge): ±6 A (8/20 μs)
Medium capacitance: CL = 12 pF (typ.)
Bi-directional symmetrical working voltage: -5.5 V to +5.5 V
Low leakage current
Very low ESD clamping voltage: 8 V (typ.)
Very low dynamic resistance: 0.13 Ω (typ.)
Pb-free (RoHS compliant) and halogen free package
1.2
•
•
Application Examples
Audio Line, Speaker, Headset, Microphone Protection
Human Interface Devices (Keyboard, Touchpad, Buttons)
1.3
Product Description
Pin 1
Pin 2
Pin 1 marking
(lasered)
Pin 1
TSLP-2
Pin 1
Pin 2
Pin 2
TSSLP-2
a) Pin configuration
b) Schematic diagram
Figure 1-1 Pin Configuration and Schematic Diagram
Table 1-1
Ordering Information
Type
Package
Configuration
Marking code
ESD206-B1-02ELS
TSSLP-2-3
1 line, bi-directional
r
ESD206-B1-02EL
TSLP-2-19
1 line, bi-directional
A3
Final Data Sheet
3
Revision 1.5, 2013-12-19
ESD206-B1-02 Series
Characteristics
2
Characteristics
2.1
Maximum Ratings
Table 2-1
Maximum Ratings at TA = 25 °C, unless otherwise specified1)
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
VESD
-
-
30
kV
IPP
-
-
6
A
Operating temperature range
TOP
-55
-
125
°C
Storage temperature
Tstg
-65
-
150
°C
2)
ESD air / contact discharge
Peak pulse current (tp = 8/20 μs)
3)
1) Device is electrically symmetrical
2) VESD according to IEC61000-4-2
3) IPP according to IEC61000-4-5
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
Electrical Characteristics at TA = 25 °C, unless otherwise specified
!"#
Figure 2-1 Definitions of electrical characteristics
Final Data Sheet
4
Revision 1.5, 2013-12-19
ESD206-B1-02 Series
Characteristics
Table 2-2
DC Characteristics at TA = 25 °C, unless otherwise specified1)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Reverse working voltage VRWM
-
-
5.5
V
Reverse current
IR
-
-
50
nA
Trigger voltage
Vt1
6.1
-
-
V
Holding voltage
Vh
6.1
8
9.5
V
IR = 10 mA
Unit
Note / Test Condition
pF
VR = 0 V, f = 1 MHz
VR = 5.5 V
1) Device is electrically symmetrical
Table 2-3
AC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Line capacitance
Table 2-4
CL
Values
Min.
Typ.
Max.
-
12
20
ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Clamping voltage
Pin 1 to GND
VCL
Values
Min.
Typ.
Max.
-
8
-
-
10.8
-
1)
Clamping voltage
GND to Pin1
2)
Clamping voltage
Dynamic resistance
1)
RDYN
Unit
Note / Test Condition
V
ITLP = 16 A
ITLP = 30 A
8.5
ITLP = 16 A
12.5
ITLP = 30 A
-
7.5
-
IPP = 1 A, tp = 8/20 µs
-
9.6
-
IPP = 6 A, tp = 8/20 µs
-
0.13
-
0.16
Ω
Pin 1 to GND
GND to Pin 1
1) ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitive Testing using Transmission Line Pulse (TLP) Model. TLP
conditions: Z0 = 50 Ω, tp = 100 ns, tr , = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using least squares fit of TLP characteristic between ITLP1 = 10 A and ITLP2 = 40 A. Please refer to
Application Note AN210[1].
2) IPP according to IEC61000-4-5 (tp = 8/20 μs)
Final Data Sheet
5
Revision 1.5, 2013-12-19
ESD206-B1-02 Series
Typical Characteristics at TA = 25 °C, unless otherwise specified
3
Typical Characteristics at TA = 25 °C, unless otherwise specified
-8
10
-9
IR [A]
10
-10
10
-11
10
-6
-5
-4
-3
-2
-1
0
1
VR [V]
2
3
4
5
6
Figure 3-1 Reverse current: IR = f(VR)
14
13
12
CL [pF]
11
10
9
8
7
6
-6
-5
-4
-3
-2
-1
0
VR [V]
1
2
3
4
5
6
Figure 3-2 Line capacitance: CL = f(VR), f = 1MHz
Final Data Sheet
6
Revision 1.5, 2013-12-19
ESD206-B1-02 Series
Typical Characteristics at TA = 25 °C, unless otherwise specified
60
30
ESD206-B1-02ELS
RDYN
50
25
40
20
30
15
20
10
10
5
0
0
-10
-5
-20
-10
Equivalent VIEC [kV]
ITLP [A]
RDYN = 0.13 Ω
RDYN = 0.16 Ω
-30
-15
-40
-20
-50
-25
-60
-20
-15
-10
-5
0
5
10
15
-30
20
VTLP [V]
Figure 3-3 Clamping voltage (TLP): ITLP = f(VTLP) according ANSI/ESD STM5.5.1 - Electrostatic Discharge
Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 Ω,
tp = 100 ns, tr = 0.6 ns, ITLP and VTLP averaging window: t1 = ns to t2 = 60 ns, extraction of
dynamic resistance using squares fit to TLP characteristics between ITLP1 = 10 A and
ITLP2 = 40 A. Please refer to Application Note AN210 [1]
Final Data Sheet
7
Revision 1.5, 2013-12-19
ESD206-B1-02 Series
Typical Characteristics at TA = 25 °C, unless otherwise specified
7
ESD206-B1-02ELS
RDYN
6
5
4
3
RDYN = 0.4 Ω
2
IPP [A]
1
0
-1
-2
RDYN = 0.5 Ω
-3
-4
-5
-6
-7
-20
-15
-10
-5
0
VCL [V]
5
10
15
20
Figure 3-4 Pulse current (IEC61000-4-5) versus clamping voltage: IPP = f(VCL)
Final Data Sheet
8
Revision 1.5, 2013-12-19
ESD206-B1-02 Series
Typical Characteristics at TA = 25 °C, unless otherwise specified
60
Scope: 6 GHz, 20 GS/s
50
40
VCL [V]
30
VCL-max-peak = 44 V
20
VCL-30ns-peak = 8 V
10
0
-10
-20
-50
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 3-5 IEC61000-4-2 : VCL = f(t), 8 kV positive pulse from pin 1 to pin 2
20
Scope: 6 GHz, 20 GS/s
10
0
VCL [V]
-10
-20
-30
-40
VCL-max-peak = -51 V
-50
VCL-30ns-peak = -8 V
-60
-70
-80
-50
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 3-6 IEC61000-4-2 : VCL = f(t), 8 kV negative pulse from pin 1 to pin 2
Final Data Sheet
9
Revision 1.5, 2013-12-19
ESD206-B1-02 Series
Typical Characteristics at TA = 25 °C, unless otherwise specified
100
Scope: 6 GHz, 20 GS/s
80
VCL [V]
60
VCL-max-peak = 82 V
40
VCL-30ns-peak = 9 V
20
0
-20
-50
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 3-7 IEC61000-4-2 : VCL = f(t), 15 kV positive pulse from pin 1 to pin 2
20
Scope: 6 GHz, 20 GS/s
0
VCL [V]
-20
-40
VCL-max-peak = -100 V
-60
VCL-30ns-peak = -10 V
-80
-100
-50
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 3-8 IEC61000-4-2 : VCL = f(t), 15 kV negative pulse from pin 1 to pin 2
Final Data Sheet
10
Revision 1.5, 2013-12-19
ESD206-B1-02 Series
Package Information
4
Package Information
4.1
TSSLP-2-3
Top view
Bottom view
0.31 +0.01
-0.02
0.32 ±0.05
0.355
0.62 ±0.05
2
Cathode
marking
0.26 ±0.035
0.2 ±0.035 1)
1
0.05 MAX.
1)
1) Dimension applies to plated terminals
TSSLP-2-3, -4-PO V01
Figure 4-1 TSSLP-2-3: Package outline (dimension in mm)
0.19
0.24
Solder mask
0.19
0.57
0.14
0.62
Copper
0.19
0.27
0.24
0.32
Stencil apertures
TSSLP-2-3, -4-FP V02
Figure 4-2 TSSLP-2-3: Footprint (dimension in mm)
0.35
4
8
Ey
Tape type
Ex Ey
Punched Tape
0.43 0.73
Embossed Tape 0.37 0.67
Deliveries can be both tape types (no selection possible).
Specification allows identical processing (pick & place) by users.
Cathode
marking
Ex
TSSLP-2-3, -4-TP V03
Figure 4-3 TSSLP-2-3: Tape and reel (dimension in mm)
Figure 4-4 TSSLP-2-3: Marking example
Final Data Sheet
11
Revision 1.5, 2013-12-19
ESD206-B1-02 Series
Package Information
4.2
TSLP-2-19
Top view
Bottom view
0.31 +0.01
-0.02
0.6 ±0.05
0.05 MAX.
1±0.05
0.65 ±0.05
2
0.25 ±0.035 1)
1
0.5 ±0.035 1)
Cathode
marking
1) Dimension applies to plated terminals
Figure 4-5 TSLP-2-19: Package outline (dimension in mm)
0.28
0.35
Solder mask
0.38
0.93
0.3
1
Copper
0.28
0.45
0.35
0.6
Stencil apertures
TSLP-2-19, -20-FP V01
Figure 4-6 TSLP-2-19: Footprint (dimension in mm)
0.4
1.16
Cathode
marking
8
4
0.76
TSLP-2-19, -20-TP V02
Figure 4-7 TSLP-2-19: Tape and reel (dimension in mm)
Type code
12
Cathode marking
TSLP-2-19, -20-MK V01
Figure 4-8 TSLP-2-19: Marking example
Final Data Sheet
12
Revision 1.5, 2013-12-19
ESD206-B1-02 Series
References
References
[1]
Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP
Characterization Methodology
Final Data Sheet
13
Revision 1.5, 2013-12-19
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