ESD3V3S1B Series

TVS Diode
Transient Voltage Suppressor Diodes
ESD3V3S1B Series
Ultra Low Clamping Bi-directional ESD / Transient Protection Diode
ESD3V3S1B-02LRH
ESD3V3S1B-02LS
Data Sheet
Revision 1.1, 2011-11-28
Final
Industrial and Multi-Market
Edition 2011-11-28
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
ESD3V3S1B Series
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 1.1, 2011-11-28
Revision 1.1;
2011-11-28
Features 1.1; Table 3-1; Table 3-3; Table 3-4
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
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MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Final Data Sheet
3
Revision 1.1, 2011-11-28
ESD3V3S1B Series
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
1.1
1.2
Ultra Low Clamping Bi-directional ESD / Transient Protection Diode . . . . . . . . . . . . . . . . . . . . . . 7
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
3.1
3.2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Electrical Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Typical Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5
Ordering Information Scheme (Examples) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6
6.1
6.2
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
PG-TSLP-2-17 (mm) [2] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
PG-TSSLP-2-1 (mm) [2] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Predefined Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Final Data Sheet
4
Revision 1.1, 2011-11-28
ESD3V3S1B Series
List of Figures
List of Figures
Figure 2-1
Figure 3-1
Figure 3-2
Figure 3-3
Figure 3-4
Figure 3-5
Figure 3-6
Figure 3-7
Figure 3-8
Figure 3-9
Figure 3-10
Figure 4-1
Figure 5-1
Figure 6-1
Figure 6-2
Figure 6-3
Figure 6-4
Figure 6-5
Figure 6-6
Figure 6-7
Figure 6-8
Pin Configuration and Schematic Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions of electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Reverse current: IR = f(VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Reverse current: IR = f(TA) , VR = 3.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Line capacitance: CL = f(VR), f = 1MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Clamping voltage (TLP): ITLP = f(VTLP), from pin 1 to pin 2 [1] . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Clamping voltage (TLP): ITLP = f(VTLP), from pin 2 to pin 1 [1] . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
IEC61000-4-2 : VCL = f(t), 8 kV positive pulse from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . 12
IEC61000-4-2 : VCL = f(t), 8 kV negative pulse from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . . 12
IEC61000-4-2 : VCL = f(t), 15 kV positive pulse from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . 13
IEC61000-4-2 : VCL = f(t), 15 kV negative pulse from pin 1 to pin 2 . . . . . . . . . . . . . . . . . . . . . . . . 13
Single line, bi-directional ESD / Transient protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-TSLP-2-17: Package overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
PG-TSLP-2-17: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
PG-TSLP-2-17: Packing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
PG-TSLP-2-17: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
PG-TSSLP-2-1: Package overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PG-TSSLP-2-1: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PG-TSSLP-2-1: Packing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
PG-TSSLP-2-1: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Final Data Sheet
5
Revision 1.1, 2011-11-28
ESD3V3S1B Series
List of Tables
List of Tables
Table 2-1
Table 3-1
Table 3-2
Table 3-3
Table 3-4
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Ratings at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ESD Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Final Data Sheet
6
7
8
8
9
9
Revision 1.1, 2011-11-28
ESD3V3S1B Series
Ultra Low Clamping Bi-directional ESD / Transient Protection Diode
1
Ultra Low Clamping Bi-directional ESD / Transient Protection
Diode
1.1
Features
•
•
•
•
•
•
ESD / transient protection of signal lines in low voltage applications according to:
– IEC61000-4-2 (ESD): ±30 kV (contact)
– IEC61000-4-4 (EFT): 40 A (5/50 ns)
– IEC61000-4-5 (surge): 8 A (8/20 μs)
Bi-directional, symmetrical working voltage up to VRWM = ±3.3 V
Ultra low clamping voltage VCL = 7 V typ. @ IPP = 16 A (TLP)
Ultra low dynamic resistance RDYN = 0.13 Ω typ.
Smallest form factor: 0.62 x 0.32 x 0.31 mm3
Pb-free (RoHS compliant) and halogen free package
1.2
•
•
Application Examples
Audio Line, Speaker, Headset, Microphone Protection
Human Interface Devices (Keyboard, Touchpad, Buttons)
2
Product Description
Pin 1
Pin 2
Pin 1 marking
(lasered)
Pin 1
TSLP-2
Pin 1
Pin 2
Pin 2
TSSLP-2
a) Pin configuration
b) Schematic diagram
P G-TS (S)LP -2_Dual_Diode_S erie_P inConf_and_S c hematic Diag. v s d
Figure 2-1 Pin Configuration and Schematic Diagram
Table 2-1
Ordering Information
Type
Package
Configuration
Marking code
ESD3V3S1B-02LRH
PG-TSLP-2-17
1 line, bi-directional
Y
ESD3V3S1B-02LS
PG-TSSLP-2-1
1 line, bi-directional
Y
Final Data Sheet
7
Revision 1.1, 2011-11-28
ESD3V3S1B Series
Characteristics
3
Characteristics
Table 3-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
VESD
–
–
30
kV
IPP
–
–
8
A
Operating temperature range
TOP
-40
–
125
°C
Storage temperature
1) VESD according to IEC61000-4-2
2) IPP according to IEC61000-4-5
Tstg
-65
–
150
°C
ESD contact discharge
1)
Peak pulse current (tp = 8/20 μs)
3.1
2)
Electrical Characteristics at TA = 25 °C, unless otherwise specified
VF
Forward voltage
IF
Forward current
VR
Reverse voltage
IF
I PP
RDYN
I R Reverse current
IHold
I Trig
VHold
VTrig
VR
I RWM
VRWM
VCL
VCL
VRWM
I RWM
VHold
VTrig
I Trig
IHold
RDYN
-IPP
IR
RDYN
VTrig
VCL
VHold
VRWM
Dynamic resistance
VFC
Forward clamping voltage
Triggering reverse voltage
ITrig
Triggering reverse current
Clamping voltage
I Hold
Holding reverse current
Holding reverse voltage
I PP
Reverse working voltage maximum
IRWM
Peak pulse current
Reverse working current maximum
Diode_Charac teris tic_Curv e_with _s napbac k_B -i direc tional .v s d
Figure 3-1 Definitions of electrical characteristics
Table 3-2
DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Reverse working voltage VRWM
-3.3
–
3.3
V
Reverse current
–
–
50
nA
Final Data Sheet
IR
8
Note /
Test Condition
VR = 3.3 V
Revision 1.1, 2011-11-28
ESD3V3S1B Series
Characteristics
Table 3-3
RF Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Line capacitance
Table 3-4
CL
Values
Min.
Typ.
Max.
–
14
20
Unit
Note /
Test Condition
pF
VR = 0 V, f = 1 MHz
Unit
Note /
Test Condition
ESD Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Clamping voltage
VCL
Clamping voltage2)
VCL
Dynamic resistance
1)
RDYN
Values
Min.
Typ.
Max.
–
7
–
V
IPP = 16 A,
tp = 100 ns
–
9
–
V
IPP = 30 A,
tp = 100 ns
–
4.5
–
V
IPP = 1 A, tp = 8/20 µs
–
6.8
–
V
IPP = 8 A, tp = 8/20 µs
–
0.13
–
Ω
1) Please refer to Application Note AN210 [1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns
to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between IPP1 = 10 A and
IPP2 = 40 A.
2) IPP according to IEC61000-4-5
Typical Characteristics at TA = 25 °C, unless otherwise specified
3.2
-5
10
10-6
10-7
IR [A]
10-8
10-9
10-10
10-11
10
-12
-4
-3
-2
-1
0
VR [V]
1
2
3
4
Figure 3-2 Reverse current: IR = f(VR)
Final Data Sheet
9
Revision 1.1, 2011-11-28
ESD3V3S1B Series
Characteristics
1000
IR [nA]
100
10
1
0.1
-50
-25
0
25
50
TA [°C]
75
100
125
Figure 3-3 Reverse current: IR = f(TA) , VR = 3.3 V
20
CL [pF]
15
10
5
-4
-3
-2
-1
0
VR [V]
1
2
3
4
Figure 3-4 Line capacitance: CL = f(VR), f = 1MHz
Final Data Sheet
10
Revision 1.1, 2011-11-28
ESD3V3S1B Series
Characteristics
30
ESD3V3S1B-02LS
RDYN
50
25
40
20
RDYN=0.130Ω
30
15
20
10
10
5
0
0
5
10
VTLP [V]
15
20
Equivalent VIEC [kV]
ITLP [A]
60
0
Figure 3-5 Clamping voltage (TLP): ITLP = f(VTLP), from pin 1 to pin 2 [1]
30
ESD3V3S1B-02LS
RDYN
50
25
40
20
RDYN=0.136Ω
30
15
20
10
10
5
0
0
5
10
VTLP [V]
15
20
Equivalent VIEC [kV]
ITLP [A]
60
0
Figure 3-6 Clamping voltage (TLP): ITLP = f(VTLP), from pin 2 to pin 1 [1]
Final Data Sheet
11
Revision 1.1, 2011-11-28
ESD3V3S1B Series
Characteristics
40
30
VCL-max-peak = 38.1 [V]
VCL [V]
20
VCL-30ns-peak = 7.7 [V]
10
0
-10
-100
0
100
200
300
400
tp [ns]
500
600
700
800
900
700
800
900
Figure 3-7 IEC61000-4-2 : VCL = f(t), 8 kV positive pulse from pin 1 to pin 2
10
VCL [V]
0
-10
VCL-max-peak = -37.5 [V]
-20
VCL-30ns-peak = -6.9 [V]
-30
-40
-100
0
100
200
300
400
tp [ns]
500
600
Figure 3-8 IEC61000-4-2 : VCL = f(t), 8 kV negative pulse from pin 1 to pin 2
Final Data Sheet
12
Revision 1.1, 2011-11-28
ESD3V3S1B Series
Characteristics
70
60
50
VCL [V]
40
VCL-max-peak = 61.3 [V]
30
VCL-30ns-peak = 8.3 [V]
20
10
0
-10
-20
-30
-100
0
100
200
300
400
tp [ns]
500
600
700
800
900
700
800
900
Figure 3-9 IEC61000-4-2 : VCL = f(t), 15 kV positive pulse from pin 1 to pin 2
30
20
10
VCL [V]
0
-10
-20
VCL-max-peak = -65.0 [V]
-30
VCL-30ns-peak = -7.6 [V]
-40
-50
-60
-70
-100
0
100
200
300
400
tp [ns]
500
600
Figure 3-10 IEC61000-4-2 : VCL = f(t), 15 kV negative pulse from pin 1 to pin 2
Final Data Sheet
13
Revision 1.1, 2011-11-28
ESD3V3S1B Series
Application Information
Application Information
Audio_in
Audio_out
single ended
Time
ESD-strike
PCB line
Headset
cable
-Vcc
+Vcc
Charge
Pump
ESD Diode
Audio Amp.
ESD-strike
Headset
Ear-phone
+Vcc
Voltage
4
Headset con.
e.g. 3.5mm jack
E S D3V 3S1B -02LS_A pplic ation. v s d
Figure 4-1 Single line, bi-directional ESD / Transient protection
Final Data Sheet
14
Revision 1.1, 2011-11-28
ESD3V3S1B Series
Ordering Information Scheme (Examples)
5
ESD
Ordering Information Scheme (Examples)
0P1
RF
- XX YY
Package
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
For Radio Frequency Applications
Line Capacitance CL in pF: (i.e.: 0P1 = 0.1pF)
ESD 5V3 U n U - XX YY
Package or Application
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
S = SOT363
U = SC74
XX = Application family:
LC = Low Clamp
HDMI
Uni- / Bi-directional or Rail to Rail protection
Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines)
Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF)
Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V)
Figure 5-1 Ordering information scheme
Final Data Sheet
15
Revision 1.1, 2011-11-28
ESD3V3S1B Series
Package Information
6
Package Information
6.1
PG-TSLP-2-17 (mm) [2]
Top view
Bottom view
0.39 +0.01
-0.03
0.6 ±0.05
0.05 MAX.
1±0.05
0.65 ±0.05
2
0.25 ±0.035 1)
1
0.5 ±0.035 1)
Cathode
marking
1) Dimension applies to plated terminal
TSLP 2 7 PO V02
0.45
Copper
Solder mask
0.375
0.35
0.275
1
0.925
0.3
0.35
0.6
0.275
Figure 6-1 PG-TSLP-2-17: Package overview
Stencil apertures
TSLP-2-7-FP V01
Figure 6-2 PG-TSLP-2-17: Footprint
0.5
1.16
Orientation
marking
8
4
0.76
TSLP-2-7-TP V03
Figure 6-3 PG-TSLP-2-17: Packing
Type code
12
Cathode marking
Figure 6-4 PG-TSLP-2-17: Marking (example)
Final Data Sheet
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ESD3V3S1B Series
Package Information
PG-TSSLP-2-1 (mm) [2]
Top view
Bottom view
0.31 +0.01
-0.02
2
0.62 ±0.035
0.355 ±0.025
0.32 ±0.035
1
0.2 ±0.025 1)
6.2
0.26 ±0.025 1)
Cathode
marking
1) Dimension applies to plated terminal
TSSLP-2-1,-2-PO V05
Figure 6-5 PG-TSSLP-2-1: Package overview
0.19
0.24
Solder mask
0.19
0.57
0.14
0.62
Copper
0.19
0.27
0.24
0.32
Stencil apertures
TSSLP-2-1,-2-FP V02
Figure 6-6 PG-TSSLP-2-1: Footprint
a
Tape type
Ex Ey
Punched Tape
0.43 0.73
Embossed Tape 0.37 0.67
8
Ey
Cathode
marking
g
0.35
4
Deliveries can be both tape types (no selection possible).
Specification allows identical processing (pick & place) by users.
Ex
TSSLP-2-1,-2-TP V03
Figure 6-7 PG-TSSLP-2-1: Packing
Figure 6-8 PG-TSSLP-2-1: Marking (example)
Final Data Sheet
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ESD3V3S1B Series
References
References
[1]
Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP
Characterization Methodology
[2]
Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages
Final Data Sheet
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ESD3V3S1B Series
Terminology
Terminology
CL
Line capacitance
EFT
Electrical Fast Transient
ESD
Electrostatic Discharge
IPP
Peak pulse current
IR
Reverse current
LCD
Liquid Crystal Display
PPK
Peak pulse power
RDYN
Dynamic resistance
RoHs
Restriction of Hazardous Substance directive
TA
Ambient temperature
TOP
Operation temperature
tp
Pulse duration
Tstg
Storage temperature
VBR
Breakdown voltage
VCL
Reverse clamping voltage
VESD
Electrostatic discharge voltage
VR
Reverse voltage
VRWM
Reverse working voltage maximum
Final Data Sheet
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ESD3V3S1B Series
Predefined Names
Predefined Names
Name
Initial Cross-Reference
X-GOLD
X-GOLD
XMM
XMM
----------------------------------------------------------------------------Definition of “Predefined Names”
Frequently used expressions, such as component names, file names, tools releases, version numbers, proprietary
variables and software links, can be used in a similar way as user variables. However, they must be listed in a
special table and not in the standard file “Variables”.
Correct Usage
Steps:
1. Insert all expressions into the left column of the above table.
2. Insert an initial Cross-Reference into the right column of the same row. The initial Cross-Reference is
necessary to ensure that a single ID is used in all your documents using the “Predefined_Names.fm” file
(Example: X-GOLD has the unique ID = CHDGHJGH).
3. Insert a Cross-Reference (Element “CrossReference”) into your document to the Element Identifier of the
“Predefined_Names.fm” file. Set the output format of the Cross-Reference to “Variable” (example: X-GOLD).
Notes
1. All documents in a project (such as XMM) and within a book should use the same file “Predefined Names”.
This allows copying content between different documents. For this reason, local versions of “Predefined
Names” must not be produced.
2. New definitions must be inserted in a new row. Never change existing definitions, as they might be used in
other documents.
3. This file does not need to be included in your book, but it must be in the fm sub-folder of your document.
4. You can sort the above table with FrameMaker only if the initial cross-reference in the right column has been
properly inserted. Otherwise, the table may only be sorted by hand, as the cross-references to your document
would get lost.
Final Data Sheet
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Revision 1.1, 2011-11-28
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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