ESD5V0L1B-02V

TVS Diodes
Transient Voltage Suppressor Diodes
ESD5V0L1B-02V
Bi-directional Low Capacitance TVS Diode
ESD5V0L1B-02V
Data Sheet
Revision 1.0, 2010-12-16
Final
Industrial and Multi-Market
Edition 2010-12-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
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be endangered.
ESD5V0L1B-02V
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 1.0, 2010-12-16
Trademarks of Infineon Technologies AG
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Other Trademarks
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development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Final Data Sheet
3
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
1.1
1.2
Bi-directional Low Capacitance TVS Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
3.1
3.2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Electrical Characteristics at TA=25°C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Typical Performance characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . 10
4
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5
Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
6.1
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-SC79-2-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
7
Date Code Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Final Data Sheet
4
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Pin configuration and schematic diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions of electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Capacitance characteristics: CL = f(VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Reverse characteristics: IR = f(VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Reverse TLP characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Forward TLP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Power derating curve: PPK = f(TA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Single Chanel, uni-directional TVS protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
PG-SC79-2-1: Package Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-SC79-2-1: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-SC79-2-1: Packing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
PG-SC79-2-1: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Date Code marking for Discrete packages with one digit (SCD8, SC79, SC751)) CES-Code . . . . 16
Final Data Sheet
5
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Rating at TA = 25 °C, unless otherwise specified. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ESD characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Final Data Sheet
6
7
8
8
9
9
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Bi-directional Low Capacitance TVS Diode
1
Bi-directional Low Capacitance TVS Diode
1.1
Features
•
•
•
•
•
•
•
ESD / transient protection according to:
– IEC61000-4-2 (ESD): ±25 kV (contact)
– IEC61000-4-4 (EFT): 40 A (5/50 ns)
– IEC61000-4-5 (surge): 2.5 A (8/20 µs)
Max.working voltage: VRWM = ±5 V
Ultra low dynamic resistance: Rdyn = 0.3Ω
Low capacitance: CL= 8.5 pf typ.
Very low reverse current: IR = ≤ 1 nA typ.
Pb-free (RoHS compliant) and halogeen free package
Qualified according AEC Q101
1.2
•
•
Application Examples
Cellular handsets, portable devices, notebooks and computers
Digital cameras, power supplies and audio / video equipment, accessories
2
Product Description
Pin 2
Pin 1
Pin 2
Pin 1
PG-SC79-2-1
a) Pin configuration
b) Schematic diagram
PG-SC 79-2-1_PinConf_and_SchematicDiag.vsd
Figure 1
Pin configuration and schematic diagram
Table 1
Ordering information
Type
Package
Configuration
Marking code
ESD5V0L1B-02V
PG-SC79-2-1
1 channel, bi-directional1 channel, bi-directional
I
Final Data Sheet
7
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Characteristics
3
Characteristics
Table 2
Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
VESD
-25
–
25
kV
IPP
-2.5
–
2.5
A
Operating temperature range
TOP
-55
–
125
°C
Storage temperature
1) VESD according to IEC61000-4-2
2) IPP according to IEC61000-4-5
Tstg
-65
–
150
°C
ESD contact discharge
1)
Peak pulse current (tp = 8/20 µs)
3.1
2)
Electrical Characteristics at TA=25°C, unless otherwise specified
Rdyn … Differential series resistance
VBR … Breakdown voltage ( I BR = 1mA typ.)
I
VRWM … Reverse working voltage maximum
IPP
VCL … Clamping voltage
IPP … Peak pulse current (t P=8/20µs typ.)
Rdyn
IBR
VCL
V BR
IRWM
VRWM
VRWM
IRWM
IBR
VBR
VCL
V
Pin 2
Rdyn
IPP
V
I
Pin 1
Diode _Characteristic_Curve_Bi -directional.vsd
Figure 2
Definitions of electrical characteristics
Table 3
DC characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Reverse working voltage VRWM
–
–
5
V
Breakdown voltage
VBR
7
–
–
V
IR = 1 mA
Reverse current
IR
–
≤1
50
nA
VR = 3 V
Final Data Sheet
8
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Characteristics
Table 4
RF characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode capacitance
Table 5
CL
Values
Min.
Typ.
Max.
–
8.5
13
Unit
Note /
Test Condition
pF
VR = 0 V, f = 1 MHz
Unit
Note /
Test Condition
ESD characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
VCL
–
17
–
V
Ipp = 5 A,
tp = 30 ns, pin 1-2
Clamping voltage1)
VCL
–
20
–
V
Ipp = 5 A,
tp = 30 ns, pin 2-1
Clamping voltage1)
VCL
–
22
–
V
Ipp = 16 A,
tp = 30 ns, pin 1-2
Clamping voltage1)
VCL
–
25
–
V
Ipp = 16 A,
tp = 30 ns, pin 2-1
Dynamic resistance1)
RDYN
–
0.3
–
Ω
tp =30 ns
1)
Clamping voltage
1) According TLP tests. Please refer to Application Note AN-210
Final Data Sheet
9
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Characteristics
Typical Performance characteristics at TA = 25 °C, unless otherwise specified
3.2
10
9
CL [pF]
8
7
6
5
0
1
2
3
4
5
VR [V]
Capacitance characteristics: CL = f(VR)
Figure 3
-7
10
-8
IR [A]
10
-9
10
-10
10
75
100
125
150
TA [°C]
Figure 4
Reverse characteristics: IR = f(VR)
Final Data Sheet
10
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Characteristics
70
35
30
50
25
40
20
30
15
Rdyn=0.4Ω
20
10
10
5
0
[kV]
60
Equivalent VIEC
ITLP [A]
ESD5V0L1B-02V Pin 1 to 2
Rdyn
0
0
Figure 5
5
10
15 20 25
VTLP [V]
30
35
40
Reverse TLP characteristics
70
35
30
50
25
40
20
30
15
Rdyn=0.2Ω
20
10
10
5
0
0
0
Figure 6
[kV]
60
Equivalent VIEC
ITLP [A]
ESD5V0L1B-02V - Pin 2 to 1
Rdyn
5
10
15 20 25
VTLP [V]
30
35
40
Forward TLP characteristics
Final Data Sheet
11
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Characteristics
120
110
100
90
80
PPK [%]
70
60
50
40
30
20
10
0
0
Figure 7
25
50
75
TA [°C]
100
125
150
Power derating curve: PPK = f(TA)
Final Data Sheet
12
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Application Information
Application Information
Connector
4
Protected Data line with signal levels
-VRWM to +VRWM (bi-directional )
I /O
ESD
sensitive
device
1
2
The protection diode should be placed very
close to the location where the ESD or other
transients can occur to keep loops and
inductances as small as possible .
Pin 1 (or pin 2) should be connected directly
to the data line and Pin 2 (or pin 1) should be
connected directly to a ground plane on the
board .
Application _ESD5 V0L1B -02V.vsd
Figure 8
Single Chanel, uni-directional TVS protection
Final Data Sheet
13
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Ordering information scheme
5
ESD
Ordering information scheme
0P1
RF
- XX YY
Package
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
For Radio Frequency Applications
Line Capacitance CL in pF: (i.e.: 0P1 = 0.1pF)
ESD 5V3 U n U - XX YY
Package or Application
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
S = SOT363
U = SC74
XX = Application family:
LC = Low Clamp
HDMI
Uni- / Bi-directional or Rail to Rail protection
Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines)
Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF)
Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V)
Figure 9
Ordering Information Scheme
Final Data Sheet
14
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Package Information
6
Package Information
6.1
PG-SC79-2-1
0.2
M
A
+0.05
0.13 -0.03
0.8 ±0.1
A
1
0.3 ±0.05
0.2 ±0.05
Cathode
marking
1.2 ±0.1
1.6 ±0.1
2
0.55 ±0.04
SC79-PO V02
0.35
PG-SC79-2-1: Package Overview
1.35
Figure 10
0.35
SC79-FP V02
Figure 11
PG-SC79-2-1: Footprint
Cathode
marking
0.4
0.93
1.96
0.2
8
Reel with 2 mm Pitch
2
1.33
Standard
4
Cathode
marking
0.66
SC79-TP V05
Figure 12
PG-SC79-2-1: Packing
Figure 13
PG-SC79-2-1: Marking (example)
Final Data Sheet
15
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Date Code Marking
Date Code Marking1)
7
Date Code marking for discrete packages with
o n e d i g i t ( S C D 8 0 , S C 7 9 , S C 7 5 1) ) C E S - C o d e
Month 2 0 03
2 0 04
2005
2006
2 0 07
2008
2009
2010
2011
2012
2 0 13
2014
01
a
p
A
P
a
p
A
P
a
p
A
P
02
b
q
B
Q
b
q
B
Q
b
q
B
Q
03
c
r
C
R
c
r
C
R
c
r
C
R
04
d
s
D
S
d
s
D
S
d
s
D
S
05
e
t
E
T
e
t
E
T
e
t
E
T
06
f
u
F
U
f
u
F
U
f
u
F
U
07
g
v
G
V
g
v
G
V
g
v
G
V
08
h
x
H
X
h
x
H
X
h
x
H
X
09
j
y
J
Y
j
y
J
Y
j
y
J
Y
10
k
z
K
Z
k
z
K
Z
k
z
K
Z
11
l
2
L
4
l
2
L
4
l
2
L
4
12
n
3
N
5
n
3
N
5
n
3
N
5
Figure 14
1)
Date Code marking for Discrete packages with one digit (SCD8, SC79, SC75 ) CES-Code
1) New Marking Layout for SC75, implemented at October 2005
Final Data Sheet
16
Revision 1.0, 2010-12-16
ESD5V0L1B-02V
Terminology
Terminology
CL
Line capacitance
EFT
Electrical Fast Transient
ESD
Electrostatic Discharge
IPP
Peak pulse current
IR
Reverse current
RoHs
Restriction of Hazardous Substance Directive
TA
Ambient Temperature
TOP
Operation temperature
tp
Pulse duration
Tstg
Storage temperature
VCL
Reverse clamping voltage
VESD
Electrostatic discharge voltage
VR
Reverse voltage
VRWM
Reverse working voltage maximum
VBR
Breakdown voltage
RDYN
Dynamic resistance
Final Data Sheet
17
Revision 1.0, 2010-12-16
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Published by Infineon Technologies AG
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