ESD5V3S1U-02LRH Silicon TVS Diode • ESD / transient protection of data and power lines in low voltage applications according to: IEC61000-4-2 (ESD): ± 25 kV (air) 20 kV (contact) IEC61000-4-4 (EFT): 50 A / 2.5 kV (5/50 ns) IEC61000-4-5 (surge): 5.5 A / 66 W (8/20 µs) • Small form factor (0402 inch): 1.0 x 0.6 x 0.4 mm3 • Uni-directional, working voltage up to 5.3 V • Ultralow clamping voltage, protects against both positive and negative ESD strikes • Ultralow dynamic resistance 0.27Ω • Very fast response time • Pb-free (RoHS compliant) package Applications • Digital interfaces (medium speed) • Vcc protection • Keypad, trackball protection, camera, displays in: mobile communications (smartphone, camera phone & added functions e.g. mobile TV) • Digital consumer & computer electronics: laptops, PC, laserjet printer, photo printer, scanner input devices (mouse, keyboard, remote control ...) • Industrial: security systems, sensors, white goods. ESD5V3S1U-02LRH 1 2 1 2011-06-17 ESD5V3S1U-02LRH Type Package Configuration Marking ESD5V3S1U-02LRH TSLP-2-17 1 line, uni-directional E2 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit ESD air / contact discharge1) VESD 25 / 20 kV Peak pulse current (tp = 8 / 20 µs)2) Ipp 5.5 A Peak pulse power (tp = 8 / 20 µs2) Ppk 66 W Operating temperature range Top -55...125 °C Storage temperature Tstg -65...150 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Characteristics Reverse working voltage VRWM - - 5.3 Breakdown voltage V(BR) 5.7 - - - - 0.1 V I(BR) = 1 mA Reverse current IR µA VR = 3.3 V Clamping voltage V VCL IPP = 1 A, tp = 8/20 µs2) - 7 9 IPP = 3.5 A, tp = 8/20 µs2) - 8 10 IPP = 5.5 A, tp = 8/20 µs2) - 9 11 IPP = 1 A, tp = 8/20 µs2) - 1.2 2 IPP = 3.5 A, tp = 8/20 µs2) - 2 3 IPP = 5.5 A, tp = 8/20 µs2) - 2.5 3.5 Forward clamping voltage VFC Diode capacitance pF CT VR = 0 V, f = 1 MHz - 35 40 VR = 2.5 V, f = 1 MHz - 20 - - 0.27 - Dynamic resistance3) (tp = 30 ns) RD Ω 1V ESD according to IEC61000-4-2 2I pp according to IEC61000-4-5 3 according to TLP tests 2 2011-06-17 ESD5V3S1U-02LRH Power derating curve Ppk = ƒ (T A) Clamping voltage, Vcl = ƒ(Ipp ) tp = 8 / 20 µs 11 110 % V 80 9 70 Vcl Ppk or Ipp 90 60 8 50 40 7 30 20 6 10 0 0 25 50 75 °C 100 5 0 150 1 2 3 4 TA A 6 I pp Forward clamping voltage VFC = ƒ(IPP) Reverse current IR = ƒ (TA) tp = 8 / 20 µs VR = 3.3 V 4 10 -6 V A 10 -7 2.5 IR V FC 3 2 1.5 10 -8 1 0.5 0 0 1 2 3 4 5 6 7 A 10 -9 -75 9 Ipp -50 -25 0 25 50 75 100 °C 150 TA 3 2011-06-17 ESD5V3S1U-02LRH Breakdown voltage VBR = ƒ(TA ) Diode capacitance CT = ƒ (VR) IR = 1 mA f = 1MHz 7.5 40 pF 7 30 6.75 25 CT VBR V 6.5 20 6.25 15 6 10 5.75 5 5.5 -75 -50 -25 0 25 50 75 100 °C 0 0 150 TA 1 2 3 4 V 6 VR 4 2011-06-17 ESD5V3S1U-02LRH Application example single channel, uni-directional Connector Protected signal line I/O 1 2 The protection diode should be placed very close to the location where the ESD can occur to keep loops and inductances as small as possible. 5 ESD sensitive device 2011-06-17 TSLP-2-17 (mm) ESD5V3S1U-02LRH Package Outline Top view Bottom view 0.39 +0.01 -0.03 0.6 ±0.05 0.05 MAX. 1 1 0.25 ±0.035 1) 2 1±0.05 0.65 ±0.05 2 0.5 ±0.035 1) Cathode marking 1) Dimension applies to plated terminal Foot Print 0.45 Copper Solder mask 0.375 0.35 0.275 1 0.925 0.3 0.35 0.6 0.275 For board assembly information please refer to Infineon website "Packages" Stencil apertures Marking Layout (Example) BAR90-02LRH Type code Cathode marking Laser marking Standard Packing Reel ø180 mm = 15.000 Pieces/Reel Reel ø330 mm = 50.000 Pieces/Reel (optional) 0.5 Cathode marking 8 1.16 4 0.76 6 2011-06-17 ESD5V3S1U-02LRH Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-06-17