SO T8 83 BAV170M Dual common cathode low-leakage diode 19 May 2016 Product data sheet 1. General description Dual common cathode low-leakage diode encapsulated in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • • High switching speed: trr = 0.8 µs Low leakage current: IR = 3 pA Repetitive peak reverse voltage VRRM ≤ 85 V Low capacitance Cd = 2 pF Ultra small SMD plastic package Low package height of 0.48 mm AEC-Q101 qualified 3. Applications • • Low-leakage current applications General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current Tamb = 25 °C; single diode loaded - - 320 mA IR reverse current VR = 75 V; Tj = 25 °C - 0.003 5 nA VR reverse voltage Tj = 25 °C - - 75 V trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C - 0.8 3 µs Per diode [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAV170M NXP Semiconductors Dual common cathode low-leakage diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 Simplified outline anode (diode 1) 2 A2 anode (diode 2) 3 CC common cathode Graphic symbol 3 1 3 2 Transparent top view DFN1006-3 (SOT883) 1 2 006aab034 6. Ordering information Table 3. Ordering information Type number BAV170M Package Name Description Version DFN1006-3 DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code BAV170M M7 BAV170M Product data sheet All information provided in this document is subject to legal disclaimers. 19 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 11 BAV170M NXP Semiconductors Dual common cathode low-leakage diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 75 V VRRM repetitive peak reverse voltage - 85 V IF forward current Per diode Tamb = 25 °C; single diode loaded [1] - 320 mA Tamb = 25 °C; double diode loaded [1] - 180 mA IFRM repetitive peak forward current tp ≤ 0.5 ms; δ ≤ 0.25 ; Tj = 25 °C - 1 A IFSM non-repetitive peak forward current tp = 100 µs; Tj(init) = 25 °C; square wave - 4 A tp = 1 ms; Tj(init) = 25 °C; square wave - 1.5 A tp = 1 s; Tj(init) = 25 °C; square wave - 0.5 A [1] - 325 mW [2] - 660 mW Per device; one diode loaded Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm². aaa-022882 0.4 IF (A) (1) 0.3 0.2 (2) 0.1 0.0 0 25 50 75 100 125 150 175 Tamb (°C) (1) single diode loaded (2) double diode loaded Fig. 1. Forward current as a function of ambient temperature; derating curve BAV170M Product data sheet All information provided in this document is subject to legal disclaimers. 19 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 11 BAV170M NXP Semiconductors Dual common cathode low-leakage diode 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) [1] [2] [3] thermal resistance from junction to solder point Min Typ Max Unit [1] - - 385 K/W [2] - - 190 K/W [3] - - 35 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm². Soldering point of cathode tab. aaa-023192 103 Zth(j-a) (K/W) duty cycle = 1 0.5 102 0.25 0.75 0.33 0.2 0.1 0.05 0.02 0.01 10 0 1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-023193 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 FR4 PCB, mounting pad for cathode 1 cm² Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BAV170M Product data sheet All information provided in this document is subject to legal disclaimers. 19 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 11 BAV170M NXP Semiconductors Dual common cathode low-leakage diode 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit forward voltage IF = 1 mA; Tj = 25 °C - - 0.9 V IF = 10 mA; Tj = 25 °C - - 1 V IF = 50 mA; Tj = 25 °C - - 1.1 V IF = 150 mA; Tj = 25 °C - - 1.25 V VR = 75 V; Tj = 25 °C - 0.003 5 nA VR = 75 V; Tj = 150 °C - 3 80 nA Per diode VF IR reverse current Cd diode capacitance VR = 0 V; f = 1 MHz; Tj = 25 °C - 2 - pF trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; RL = 100 Ω; Tamb = 25 °C - 0.8 3 µs aaa-022883 1 mlb754 102 IR (nA) IF (A) 10 (1) 10-1 (1) (2) (3) 1 (4) 10-2 10- 1 10-3 (2) 10- 2 10-4 0.0 0.5 1.0 1.5 VF (V) 10- 3 2.0 0 50 100 150 Tj (°C) 200 VR = 75 V (1) Maximum values (2) Typical values (1) Tj = 150 °C (2) Tj = 85 °C (3) Tj = 25 °C (4) Tj = −40 °C Fig. 5. Reverse current as a function of junction Fig. 4. Forward current as a function of forward voltage; temperature typical values BAV170M Product data sheet All information provided in this document is subject to legal disclaimers. 19 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 11 BAV170M NXP Semiconductors Dual common cathode low-leakage diode aaa-022884 2.4 aaa-020909 10 Cd (pF) IFSM (A) 1.6 1 0.8 0.0 0 5 10 15 20 VR (V) 10-1 10-1 25 f = 1 MHz; Tamb = 25 °C 1 102 10 tp (ms) 103 Based on square wave currents. Tamb = 25 °C Fig. 6. Diode capacitance as a function of reverse voltage; typical values Fig. 7. Non-repetitive forward current as a function of pulse duration; maximum values 11. Test information tr D.U.T. RS = 50 Ω V = VR + IF × RS IF tp 10 % t + IF SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω mga881 VR (1) 90 % input signal output signal (1) IR = 1 mA Fig. 8. Reverse recovery time test circuit and waveforms Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAV170M Product data sheet All information provided in this document is subject to legal disclaimers. 19 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 11 BAV170M NXP Semiconductors Dual common cathode low-leakage diode 12. Package outline 0.62 0.55 0.55 0.47 0.50 0.46 3 0.30 0.22 0.65 0.30 0.22 2 0.20 0.12 1.02 0.95 1 0.35 Dimensions in mm 03-04-03 Fig. 9. Package outline DFN1006-3 (SOT883) 13. Soldering 1.3 0.7 R0.05 (12×) solder lands 0.9 0.6 0.7 solder resist solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Fig. 10. Reflow soldering footprint for DFN1006-3 (SOT883) BAV170M Product data sheet All information provided in this document is subject to legal disclaimers. 19 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 11 BAV170M NXP Semiconductors Dual common cathode low-leakage diode 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BAV170M v.1 20160519 Product data sheet - - BAV170M Product data sheet All information provided in this document is subject to legal disclaimers. 19 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 11 BAV170M NXP Semiconductors Dual common cathode low-leakage diode Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 15. Legal information Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. BAV170M Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. All information provided in this document is subject to legal disclaimers. 19 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 11 BAV170M NXP Semiconductors Dual common cathode low-leakage diode Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BAV170M Product data sheet All information provided in this document is subject to legal disclaimers. 19 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 11 BAV170M NXP Semiconductors Dual common cathode low-leakage diode 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 5 11. Test information......................................................... 6 12. Package outline.......................................................... 7 13. Soldering..................................................................... 7 14. Revision history..........................................................8 15. Legal information....................................................... 9 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 May 2016 BAV170M Product data sheet All information provided in this document is subject to legal disclaimers. 19 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 11